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INA129UA/2K5G4

Texas Instruments

INA129UA/2K5G4 by Texas Instruments

INA129UA/2K5G4 by Texas Instruments is an instrumentation amplifier with a max input offset voltage of 1125uV and max average bias current of 0.01uA. It operates at a nominal voltage of +-15V, making it suitable for automotive applications due to its high common mode reject ratio of 73dB.

Median Price

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Lifecycle Status

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4

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1k+

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Chip Stock

USA . 10,880 parts In-Stock

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Vyrian

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Digiode

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Nova Conductors

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Parana Technologies

USA . 1,063 parts In-Stock

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$4.138

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$4.587

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One Stop Electronics

USA . 1,385 parts In-Stock

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$4.410

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ChromeModa Solutions

Germany . 4,555 parts In-Stock

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$4.649

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$3.812

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IDEA Electronic Components Group

UK . 1,559 parts In-Stock

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$4.649

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$4.184

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Semicontronic

India . 1,301 parts In-Stock

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$5.410

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$5.275

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$5.248

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Corohmni

South Africa . 1 parts In-Stock

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$6.646

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Advanced Electronics

New Zealand . 89 parts In-Stock

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Ampacity Inc.

Singapore . 1,426 parts In-Stock

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$9.410

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AZTECH Wire

Italy . 681 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 23,317 parts In-Stock

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Perfect Parts

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Continental Prestige Electronics

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Argo Parts USA

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Microchip USA

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DigiPath Technology Company

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Corphita

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Robosynatics

Brazil . 450 parts In-Stock

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Lucentia Tech

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Bastille Electronics

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Modulus Dynamics

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Overview

Enhance your instrumentation applications with the INA129UA/2K5G4 from Texas Instruments. With a maximum input offset voltage of 1125 uV and a maximum average bias current of 0.01 uA, this small outline amplifier is perfect for automotive-grade projects. Enjoy a nominal supply voltage of 15V and a wide bandwidth of 1.3 MHz, all in a compact rectangular package. Trust in Texas Instruments' reputation for quality and reliability, and experience the precision and performance this instrumentation amplifier can bring to your designs. Upgrade your systems with the value and benefits of the INA129UA/2K5G4 today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material ensures durability and reliability, making it a cost-effective choice.

Maximum Input Offset Voltage: 1125 uV

Low input offset voltage leads to accurate measurements and improved overall performance.

Maximum Average Bias Current (IIB): 0.01 uA

Low bias current minimizes errors and ensures precision in signal processing applications.

Surface Mount: YES

Surface mount capability allows for easy and space-efficient integration into PCB designs.

Package Shape: RECTANGULAR

Rectangular shape facilitates easy mounting and placement in electronic assemblies.

Nominal Supply Voltage / Vsup (V): 15

The nominal supply voltage of 15V ensures compatibility with a wide range of systems.

Power Supplies (V): +-15

Dual power supplies of +-15V provide flexibility in operation and enhanced performance.

No. of Terminals: 8

With 8 terminals, this product offers versatility in connection options for various applications.

Maximum Input Offset Current (IIO): 0.01 uA

Low input offset current contributes to high accuracy in data acquisition tasks.

Package Style (Meter): SMALL OUTLINE

The small outline package design saves space and allows for compact system designs.

Maximum Non Linearity: 0.004%

Low non-linearity ensures precise amplification and faithful signal reproduction.

Maximum Supply Voltage Limit: 18 V

The 18V supply voltage limit allows for safe operation within specified limits.

Maximum Operating Temperature: 125 °C

With a high operating temperature range, this product can withstand harsh environmental conditions.

Maximum Bias Current (IIB) @25°C: 0.005 uA

The low bias current at 25°C ensures stable and accurate performance in varying temperatures.

Minimum Operating Temperature: -40 °C

The wide temperature range from -40°C ensures usability in extreme conditions.

Terminal Finish: Nickel/Palladium/Gold (Ni/Pd/Au)

This terminal finish provides excellent conductivity and corrosion resistance.

Terminal Position: DUAL

Dual terminal positions offer flexibility in connection orientations and configurations.

Maximum Voltage Gain: 10000

High voltage gain allows for amplification of weak signals with minimal distortion.

Maximum Seated Height: 1.75 mm

The low seated height enables compact PCB designs and space-saving installations.

Width: 3.9 mm

The narrow width makes this product suitable for applications with limited space constraints.

Nominal Bandwidth (3dB): 1.3 MHz

The wide bandwidth capability ensures accurate signal amplification across a range of frequencies.

Peak Reflow Temperature °C: 260

The high peak reflow temperature ensures reliable soldering during assembly processes.

Length: 4.9 mm

The short length allows for convenient placement in tight spaces and compact devices.

Temperature Grade: AUTOMOTIVE

Automotive-grade temperature tolerance makes this product ideal for use in automotive applications.

Maximum Negative Supply Voltage Limit: -18 V

The negative supply voltage limit of -18V allows for dual power supply operation.

Minimum Common Mode Reject Ratio: 73 dB

The high common-mode rejection ratio minimizes interference and noise in signal processing.

Technology: BIPOLAR

Bipolar technology delivers high precision and accuracy in amplifier circuits.

Terminal Form: GULL WING

The gull-wing terminal form ensures secure and reliable connections in PCB assemblies.

Amplifier Type: INSTRUMENTATION AMPLIFIER

This instrumentation amplifier type is ideal for precise and accurate signal amplification.

Maximum Supply Current: 0.75 mA

The low supply current consumption enables energy-efficient operation and prolonged battery life.

Nominal Negative Supply Voltage (Vsup): -15 V

The nominal negative supply voltage of -15V ensures stable operation in dual power supply configurations.

Packing Method: TR

The tape and reel packing method facilitates automated assembly and handling processes.

Nominal Slow Rate: 4 V/us

The slow slew rate allows for controlled signal amplification and minimizes overshoot or ringing.

Terminal Pitch: 1.27 mm

The standard terminal pitch of 1.27mm ensures compatibility with common PCB layouts and configurations.

Nominal Voltage Gain: 10

The nominal voltage gain of 10 provides sufficient amplification for various signal processing applications.

Moisture Sensitivity Level (MSL): 3

The moisture sensitivity level of 3 indicates high reliability and resistance to environmental humidity.

Technical Specifications

Instrumentation Amplifiers INA129UA/2K5G4 attributes and parameters. Explore more Instrumentation Amplifiers devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Technology:

Bipolar

Power Supply:

±15 V

Total Functions:

1

Sub-Category:

Instrumentation Amplifiers

Performance Specifications

Nominal Bandwidth (3dB):

1.3 MHz

Nominal Slew Rate:

4 V/us

Minimum Common Mode Rejection Ratio (CMRR ):

73 dB

Input Offset Voltage Limit:

1.125 mV

Peak Bias Current:

10 nA

Maximum Bias Current (IIB) @25 °C:

5 nA

Maximum Supply Current:

750 μA

Minimum Voltage Gain:

1

Nominal Voltage Gain:

10

Maximum Voltage Gain:

10000

Maximum Non Linearity:

0.004 %

Maximum Input Offset Current (IIO):

10 nA

Operational Characteristics

Nominal Supply Voltage:

15 V

Maximum Supply Voltage:

18 V

Nominal Negative Supply Voltage (Vsup):

-15 V

Maximum Negative Supply Voltage:

-18 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Physical Characteristics

Length:

0.193 in (4.9 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

8

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel/Palladium/Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

3

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP8,.25

Trade Compliance

INA129UA/2K5G4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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