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INA321E/250

Texas Instruments

INA321E/250 by Texas Instruments

INA321E/250 by Texas Instruments is an instrumentation amplifier with 500uV max input offset voltage, 0.00001uA max average bias current, and 5V nominal voltage. Ideal for military applications due to its -55 to 125 °C operating temperature range and CMOS technology.

Median Price

$4.528

Lifecycle Status

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1k+

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Texas Instruments

USA . 41,792 parts In-Stock

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$3.305

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$2.896

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$1.636

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Mouser Electronics

USA . 272 parts In-Stock

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$5.750

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$3.660

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$3.320

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DigiKey

USA . 517 parts In-Stock

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$5.830

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$3.745

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Rochester

USA . 36 parts In-Stock

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$2.360

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$2.110

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$1.980

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Digiode

USA . 2,369 parts In-Stock

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Nova Conductors

Japan . 24 parts In-Stock

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TME

Poland . 122 parts In-Stock

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$4.430

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$2.950

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$2.950

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Forefront Electronics and Design

USA . 4 parts In-Stock

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$9.800

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Chip Stock

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Vyrian

USA . 10,351 parts In-Stock

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Bristol Electronics

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PC Components Company LLC

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ComSIT Distribution GmbH

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Amalfi Trading

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ACDS - Activité Composants Distribution Service

France . 154 parts In-Stock

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Dan-Mar Components

USA . 154 parts In-Stock

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Connector Distribution Corp

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Right Parts Inc.

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Cogito LLC

Ukraine . 2 parts In-Stock

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Cyclops Electronics Ltd

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Distributors (Availability)

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Corphita

USA . 4,338 parts In-Stock

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$2.043

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$2.043

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Parana Technologies

USA . 343 parts In-Stock

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$2.705

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$251.173

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$2.434

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Argo Parts USA

USA . 2,259 parts In-Stock

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$2.747

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Bastille Electronics

Australia . 300 parts In-Stock

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$2.747

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$2.610

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$2.479

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$2.445

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$2.747

$2.610

$2.479

$2.445

Advanced Electronics

New Zealand . 200 parts In-Stock

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$2.802

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$2.802

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$2.802

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$2.802

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DigiPath Technology Company

USA . 1,651 parts In-Stock

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$2.978

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ChromeModa Solutions

Germany . 6,771 parts In-Stock

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$3.039

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$2.492

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IDEA Electronic Components Group

UK . 1,828 parts In-Stock

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$3.039

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$2.735

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Semicontronic

India . 10,658 parts In-Stock

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$4.200

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$4.095

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$4.074

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$4.200

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Corohmni

South Africa . 248 parts In-Stock

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$4.243

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QUARKTWIN TECHNOLOGY LTD

USA . 18,532 parts In-Stock

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A-Z Elektronik GmbH

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Lixinc

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Alle Elektronik GmbH

Germany . 3,890 parts In-Stock

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Perfect Parts

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Kepictronics

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Overview

Unleash the power of precision with the Texas Instruments INA321E/250 Instrumentation Amplifier. Manufactured with top-notch quality and cutting-edge technology, this amplifier offers unrivaled accuracy and reliability for a wide range of applications. From industrial automation to medical devices, this versatile product delivers superior performance and value. Experience the difference with Texas Instruments - where excellence meets innovation.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, ideal for portable and long-lasting applications.

Maximum Input Offset Voltage: 500 uV

Low input offset voltage ensures accurate and precise measurements, making this product suitable for sensitive instrumentation applications.

Maximum Average Bias Current (IIB): 0.00001 uA

Low bias current results in minimal signal distortion, making this instrumentation amplifier ideal for high-precision applications where accuracy is crucial.

Surface Mount: YES

Surface mount capability allows for easy integration into compact electronic designs, saving space and simplifying assembly.

Nominal Supply Voltage / Vsup (V): 5

Operates on a standard 5V supply voltage, making it compatible with a wide range of electronic systems and power sources.

Power Supplies (V): 3/5

Support for both 3V and 5V power supplies offers flexibility in design and compatibility with various voltage requirements.

No. of Terminals: 8

The number of terminals provides ample connectivity options, allowing for versatile connections and configurations in instrumentation setups.

Maximum Input Offset Current (IIO): 0.00001 uA

Low input offset current minimizes errors in signal processing, ensuring accurate measurements and reliable performance in critical applications.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Compact package style with a thin profile and shrink pitch design saves space and facilitates efficient heat dissipation, ideal for compact and high-density electronic assemblies.

Maximum Non Linearity: 0.01 %

Low non-linearity ensures that the output faithfully represents the input signal, making this instrumentation amplifier suitable for high-precision measurement and control applications.

Maximum Supply Voltage Limit: 7.5 V

The maximum supply voltage limit provides overvoltage protection, safeguarding the amplifier and connected components from damage in case of voltage spikes or fluctuations.

Maximum Operating Temperature: 125 °C

Wide operating temperature range enables reliable performance in harsh environmental conditions, making this amplifier suitable for industrial and military applications.

Minimum Voltage Gain: 5

The minimum voltage gain of 5 ensures adequate amplification of weak signals, making this product suitable for applications requiring signal conditioning or amplification.

Minimum Operating Temperature: -55 °C

Low minimum operating temperature allows for reliable operation in extreme cold environments, making this amplifier suitable for outdoor or aerospace applications.

Terminal Finish: NICKEL PALLADIUM GOLD SILVER

High-quality terminal finish provides excellent conductivity and corrosion resistance, ensuring reliable connections and signal transmission in demanding environments.

Terminal Position: DUAL

Dual terminal position offers flexibility in circuit configurations and signal routing, allowing for versatile and customized setups in instrumentation systems.

Maximum Voltage Gain: 1000

High maximum voltage gain allows for amplification of weak signals and precise control over signal output, making this amplifier suitable for applications requiring high gain.

Maximum Seated Height: 1.1 mm

Low seated height facilitates compact and space-saving PCB layouts, making this product ideal for slim and portable electronic devices.

Width: 3 mm

Compact width enables easy integration into narrow spaces and tight layouts, making this amplifier suitable for applications with space constraints.

Nominal Bandwidth (3dB): 0.5 MHz

Wide nominal bandwidth allows for capturing high-frequency signals with minimal distortion, making this amplifier suitable for applications requiring precise signal reproduction.

Maximum Time At Peak Reflow Temperature (s): 30

Short time at peak reflow temperature ensures component reliability during soldering processes, making this instrumentation amplifier suitable for high-temperature assembly environments.

Peak Reflow Temperature °C: 260

High peak reflow temperature tolerance ensures component durability and reliability during soldering processes, suitable for harsh manufacturing conditions.

Length: 3 mm

Compact length allows for space-efficient integration into electronic assemblies, making this instrumentation amplifier ideal for miniaturized designs and portable devices.

Temperature Grade: MILITARY

Military-grade temperature tolerance ensures reliable performance in rugged and high-stress environments, making this amplifier suitable for defense and aerospace applications.

Minimum Common Mode Reject Ratio: 90 dB

High common mode reject ratio ensures accurate differential signal amplification by minimizing noise and interference, making this product suitable for precision measurement applications.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making this instrumentation amplifier energy-efficient and reliable in noisy environments.

Terminal Form: GULL WING

Gull wing terminal form provides secure attachment to PCBs and facilitates automated assembly processes, ensuring reliable connections and ease of integration.

Amplifier Type: INSTRUMENTATION AMPLIFIER

Specifically designed for precise signal amplification and measurement, this instrumentation amplifier offers high accuracy and stability in various instrumentation and control applications.

Maximum Supply Current: 0.07 mA

Low maximum supply current consumption ensures energy efficiency and minimizes heat dissipation, making this amplifier suitable for battery-powered and low-power devices.

Packing Method: TR

TR packing method (tape and reel) allows for automated pick-and-place assembly, streamlining production processes and reducing manufacturing costs.

Nominal Slow Rate: 0.4 V/us

Low nominal slow rate ensures stable and gradual voltage changes, minimizing signal distortion and ensuring reliable signal processing in dynamic applications.

Terminal Pitch: 0.65 mm

Narrow terminal pitch provides high-density connectivity options and allows for compact PCB layouts, making this amplifier suitable for space-constrained applications.

Nominal Voltage Gain: 25

Nominal voltage gain of 25 provides moderate signal amplification for various applications, striking a balance between sensitivity and precision in signal processing.

Moisture Sensitivity Level (MSL): 2

MSL 2 indicates moderate moisture sensitivity, allowing for safe storage and handling of the product in typical manufacturing and assembly environments.

Technical Specifications

Instrumentation Amplifiers INA321E/250 attributes and parameters. Explore more Instrumentation Amplifiers devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Technology:

CMOS

Power Supply:

3/5 V

Total Functions:

1

Sub-Category:

Instrumentation Amplifiers

Performance Specifications

Nominal Bandwidth (3dB):

500 kHz

Nominal Slew Rate:

0.4 V/us

Minimum Common Mode Rejection Ratio (CMRR ):

90 dB

Input Offset Voltage Limit:

500 µV

Peak Bias Current:

10 pA

Maximum Bias Current (IIB) @25 °C:

10 pA

Maximum Supply Current:

70 μA

Minimum Voltage Gain:

5

Nominal Voltage Gain:

25

Maximum Voltage Gain:

1000

Maximum Non Linearity:

0.01 %

Maximum Input Offset Current (IIO):

10 pA

Operational Characteristics

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

7.5 V

Lowest Operating Temperature:

-55 °C (-67 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Reflow Peak Time Limit:

30 s

Peak Reflow Temperature:

260 °C (500 °F)

Physical Characteristics

Length:

0.118 in (3 mm)

Width:

0.118 in (3 mm)

Maximum Seated Height:

0.043 in (1.1 mm)

Total Terminals:

8

Terminal Pitch:

0.026 in (0.65 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold Silver

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

2

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

S-PDSO-G8

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

Package Shape:

Package Style:

Small Outline, Thin Profile, Shrink Pitch

Package Equivalence Code:

TSSOP8,.19

Trade Compliance

INA321E/250 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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