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INA322EA/2K5

Texas Instruments

INA322EA/2K5 by Texas Instruments

INA322EA/2K5 by Texas Instruments is a CMOS instrumentation amplifier with 8 terminals and a supply voltage of 5V. It offers a max input offset voltage of 10000uV, bias current of 0.00001uA, and non-linearity of 0.01%. Ideal for military applications due to its temperature grade and small form factor.

Median Price

$1.536

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Texas Instruments

USA . 35,788 parts In-Stock

1+ parts

$1.967

100+ parts

$1.624

1k+ parts

$0.878

10k+ parts

-

35,788

$1.967

$1.624

$0.878

-

Rochester

USA . 55,416 parts In-Stock

1+ parts

-

100+ parts

$1.260

1k+ parts

$1.130

10k+ parts

$1.060

55,416

-

$1.260

$1.130

$1.060

DigiKey

USA . 55,416 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.660

10k+ parts

-

55,416

-

-

$1.660

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Verical

USA . 40,418 parts In-Stock

1+ parts

-

100+ parts

-

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$1.413

10k+ parts

$1.325

40,418

-

-

$1.413

$1.325

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 72 parts In-Stock

1+ parts

$1.043

100+ parts

-

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-

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72

$1.043

-

-

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Digiode

USA . 454 parts In-Stock

1+ parts

$1.159

100+ parts

-

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454

$1.159

-

-

-

Bristol Electronics

USA . 2,188 parts In-Stock

1+ parts

$2.479

100+ parts

$1.537

1k+ parts

$0.818

10k+ parts

-

2,188

$2.479

$1.537

$0.818

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Vyrian

USA . 42,619 parts In-Stock

1+ parts

-

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42,619

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Chip Stock

USA . 6,260 parts In-Stock

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6,260

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ACDS - Activité Composants Distribution Service

France . 2,188 parts In-Stock

1+ parts

-

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2,188

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Dan-Mar Components

USA . 2,188 parts In-Stock

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2,188

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 214 parts In-Stock

1+ parts

$0.899

100+ parts

-

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-

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214

$0.899

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-

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Ampacity Inc.

Singapore . 42,787 parts In-Stock

1+ parts

$1.040

100+ parts

-

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42,787

$1.040

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Semicontronic

India . 42,638 parts In-Stock

1+ parts

$1.040

100+ parts

$1.014

1k+ parts

$1.009

10k+ parts

-

42,638

$1.040

$1.014

$1.009

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Continental Prestige Electronics

USA . 1,226 parts In-Stock

1+ parts

$1.043

100+ parts

-

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10k+ parts

$1.022

1,226

$1.043

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-

$1.022

Argo Parts USA

USA . 1,196 parts In-Stock

1+ parts

$1.043

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1,196

$1.043

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Corphita

USA . 418 parts In-Stock

1+ parts

$1.098

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418

$1.098

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Parana Technologies

USA . 495 parts In-Stock

1+ parts

$4.050

100+ parts

$376.140

1k+ parts

$3.645

10k+ parts

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495

$4.050

$376.140

$3.645

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DigiPath Technology Company

USA . 196 parts In-Stock

1+ parts

$4.460

100+ parts

-

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196

$4.460

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ChromeModa Solutions

Germany . 5,967 parts In-Stock

1+ parts

$4.551

100+ parts

$3.732

1k+ parts

-

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5,967

$4.551

$3.732

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IDEA Electronic Components Group

UK . 1,124 parts In-Stock

1+ parts

$4.551

100+ parts

-

1k+ parts

$4.096

10k+ parts

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1,124

$4.551

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$4.096

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A-Z Elektronik GmbH

Germany . 8,488 parts In-Stock

1+ parts

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8,488

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Alle Elektronik GmbH

Germany . 3,992 parts In-Stock

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3,992

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Netroflash

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

$1.022

1k+ parts

$0.991

10k+ parts

$0.970

2,000

-

$1.022

$0.991

$0.970

Overview

Unlock precise and reliable measurements with the Texas Instruments INA322EA/2K5 instrumentation amplifier. Crafted with top-notch quality and precision by a trusted manufacturer, this versatile device is perfect for a wide range of applications. Whether you're in need of accurate data acquisition or signal processing, this compact and efficient amplifier offers unmatched value and performance. Experience the benefits of superior design and technology with the Texas Instruments INA322EA/2K5.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and reliability in various environments.

Maximum Input Offset Voltage: 10000 uV

The low input offset voltage allows for accurate amplification of small signals without distortion.

Maximum Average Bias Current (IIB): 0.00001 uA

The ultra-low bias current minimizes power consumption and signal errors in precision applications.

Surface Mount: YES

The surface mount capability provides easy integration into compact designs and PCB layouts.

Package Shape: SQUARE

The square shape allows for efficient use of board space and easy placement in tight layouts.

Nominal Supply Voltage / Vsup (V): 5

The nominal supply voltage of 5V makes it compatible with a wide range of applications.

Power Supplies (V): 3/5

The flexibility to operate with both 3V and 5V power supplies enhances versatility in different setups.

No. of Terminals: 8

The ample number of terminals allows for easy connection and interfacing with other components.

Maximum Input Offset Current (IIO): 0.0001 uA

The low input offset current helps in maintaining signal integrity and accuracy in amplification.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

The compact and slim package style saves space and enables high-density mounting.

Maximum Non Linearity: 0.01 %

The low non-linearity ensures accurate amplification and faithful representation of input signals.

Maximum Supply Voltage Limit: 7.5 V

The high supply voltage limit provides robustness and reliability in demanding conditions.

Maximum Operating Temperature: 125 °C

The high operating temperature range allows for use in industrial and extreme environments.

Maximum Bias Current (IIB) @25°C: 0.00001 uA

The ultra-low bias current remains stable across temperature variations for consistent performance.

Minimum Voltage Gain: 5

The minimum voltage gain ensures that even small input signals are effectively amplified.

Minimum Operating Temperature: -55 °C

The low operating temperature range allows for reliable operation in cold environments.

Terminal Finish: NICKEL PALLADIUM GOLD SILVER

The quality terminal finish offers excellent conductivity and corrosion resistance for long-term reliability.

Terminal Position: DUAL

The dual terminal position facilitates easy and secure PCB mounting for stable connections.

Maximum Voltage Gain: 1000

The high maximum voltage gain allows for amplification of weak signals to usable levels.

Maximum Seated Height: 1.1 mm

The low seated height enables placement in compact spaces and slim devices.

Width: 3 mm

The narrow width allows for space-efficient board layout and integration in tight spaces.

Nominal Bandwidth (3dB): 0.5 MHz

The wide bandwidth ensures high-frequency signal amplification with minimal distortion.

Maximum Time At Peak Reflow Temperature (s): 30

The short reflow time at peak temperature prevents thermal stress and ensures component reliability.

Peak Reflow Temperature °C: 260

The high peak reflow temperature tolerance ensures durability during manufacturing processes.

Length: 3 mm

The short length allows for compact and efficient placement on PCBs.

Temperature Grade: MILITARY

The military-grade temperature rating ensures performance and reliability in harsh operating conditions.

Minimum Common Mode Reject Ratio: 60 dB

The high rejection ratio minimizes noise and interference for clean signal amplification.

Technology: CMOS

The CMOS technology offers low power consumption, high accuracy, and excellent noise performance for precision applications.

Terminal Form: GULL WING

The gull-wing terminal form provides secure mounting and easy inspection during assembly.

Amplifier Type: INSTRUMENTATION AMPLIFIER

The instrumentation amplifier design enables precise measurement and conditioning of low-level signals.

Packing Method: TR

The TR packing method ensures protection during shipping and storage, minimizing the risk of damage.

Nominal Slow Rate: 0.4 V/us

The slow rate allows for gradual changes in voltage output, preventing sudden spikes or fluctuations.

Terminal Pitch: 0.65 mm

The small terminal pitch facilitates compact PCB layout and high-density mounting.

Nominal Voltage Gain: 25

The nominal voltage gain of 25 offers a balanced amplification range for various signal levels.

Moisture Sensitivity Level (MSL): 2

The MSL 2 rating indicates resistance to moisture, ensuring long-term reliability in humid conditions.

Technical Specifications

Instrumentation Amplifiers INA322EA/2K5 attributes and parameters. Explore more Instrumentation Amplifiers devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Technology:

CMOS

Power Supply:

3/5 V

Total Functions:

1

Sub-Category:

Instrumentation Amplifiers

Performance Specifications

Nominal Bandwidth (3dB):

500 kHz

Nominal Slew Rate:

0.4 V/us

Minimum Common Mode Rejection Ratio (CMRR ):

60 dB

Input Offset Voltage Limit:

10 mV

Peak Bias Current:

10 pA

Maximum Bias Current (IIB) @25 °C:

10 pA

Minimum Voltage Gain:

5

Nominal Voltage Gain:

25

Maximum Voltage Gain:

1000

Maximum Non Linearity:

0.01 %

Maximum Input Offset Current (IIO):

100 pA

Operational Characteristics

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

7.5 V

Lowest Operating Temperature:

-55 °C (-67 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Reflow Peak Time Limit:

30 s

Peak Reflow Temperature:

260 °C (500 °F)

Physical Characteristics

Length:

0.118 in (3 mm)

Width:

0.118 in (3 mm)

Maximum Seated Height:

0.043 in (1.1 mm)

Total Terminals:

8

Terminal Pitch:

0.026 in (0.65 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold Silver

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

2

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

S-PDSO-G8

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

Package Shape:

Package Style:

Small Outline, Thin Profile, Shrink Pitch

Package Equivalence Code:

TSSOP8,.19

Trade Compliance

INA322EA/2K5 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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