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NSC810AD-1

Texas Instruments

NSC810AD-1 by Texas Instruments

NSC810AD-1 by Texas Instruments is a 16-bit Parallel I/O Port with 40 terminals, operating at 5V. It belongs to the NSC800 CPU family and uses CMOS technology. Ideal for commercial applications, it has a temperature range of 0-70°C and a max supply current of 10mA.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,680 parts In-Stock

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Anansix

USA . 1,651 parts In-Stock

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Digiode

USA . 1,095 parts In-Stock

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Distributors (Availability)

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One Stop Electronics

USA . 1,627 parts In-Stock

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$11.000

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$11.000

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AZTECH Wire

Italy . 537 parts In-Stock

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$11.104

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537

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Parana Technologies

USA . 1,478 parts In-Stock

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$39.647

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ChromeModa Solutions

Germany . 6,001 parts In-Stock

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$44.547

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$36.529

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6,001

$44.547

$36.529

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IDEA Electronic Components Group

UK . 419 parts In-Stock

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$44.547

100+ parts

$42.320

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$40.092

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419

$44.547

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$40.092

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Corohmni

South Africa . 2,248 parts In-Stock

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$70.080

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Corphita

USA . 3,416 parts In-Stock

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DigiPath Technology Company

USA . 2,125 parts In-Stock

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$40.164

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Overview

Unlock the power of parallel I/O ports with the NSC810AD-1 by Texas Instruments. Crafted with precision and expertise, this innovative product offers unparalleled performance and reliability for a wide range of applications. Whether you're in need of robust connectivity or seamless data transfer, this product delivers top-notch quality and efficiency. Trust in Texas Instruments to provide you with cutting-edge technology that exceeds expectations. Experience the value and benefits of the NSC810AD-1 today.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic packages provide better thermal performance and are more durable, making this product suitable for harsh operating environments.

No. of Bits: 16

With 16 bits, this product offers higher data transfer capability, allowing for more complex parallel I/O operations.

Power Supplies (V): 5

Operating at 5V allows for compatibility with common voltage standards, making integration easier in various systems.

No. of Terminals: 40

Having 40 terminals provides flexibility in connecting to multiple devices simultaneously, enhancing the product's versatility.

Maximum Operating Temperature: 70 °C

The ability to operate at high temperatures up to 70°C ensures reliable performance under challenging conditions.

Minimum Operating Temperature: 0 °C

The product can function at temperatures as low as 0°C, allowing for operation in a wide range of environments.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, contributing to efficient and reliable parallel I/O operations.

Memory Organization: 128X8

With a memory organization of 128X8, this product can handle data storage and retrieval efficiently, supporting seamless data processing.

Technical Specifications

Parallel I/O Ports NSC810AD-1 attributes and parameters. Explore more Parallel I/O Ports devices from Texas Instruments

Specs

CPU Family:

NSC800

JESD-30 Code:

R-XDIP-T40

Memory Organization:

128X8

No. of Bits:

16

No. of Ports:

3

No. of Terminals:

40

No. of Timers:

2

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP40,.6

Package Shape:

Package Style (Meter):

IN-LINE

Power Supplies (V):

5

Qualification:

Not Qualified

Sub-Category:

Parallel IO Port

Maximum Supply Current:

10 mA

Nominal Supply Voltage:

5 V

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Trade Compliance

NSC810AD-1 Peripheral ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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