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LP395Z

Texas Instruments

LP395Z by Texas Instruments

Texas Instruments LP395Z is a NPN BJT with max. VCE of 36V and IC of 0.1A. Ideal for low-power applications, it has a cylindrical package with 3 terminals. Suitable for various electronic circuits due to its small signal capabilities and silicon transistor element material.

Median Price

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Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 6,452 parts In-Stock

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6,452

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Digiode

USA . 2,639 parts In-Stock

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2,639

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Zilex Electronics Inc.

Canada . 770 parts In-Stock

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770

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Anansix

USA . 614 parts In-Stock

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614

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ComSIT Distribution GmbH

Germany . 200 parts In-Stock

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200

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ACDS - Activité Composants Distribution Service

France . 100 parts In-Stock

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100

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Velocity Electronics

USA . 88 parts In-Stock

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88

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North Shore Components

USA . 88 parts In-Stock

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88

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MISTER SPROCKETS

USA . 80 parts In-Stock

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80

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Manotoh

Italy . 40 parts In-Stock

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40

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Prism Electronics

USA . 24 parts In-Stock

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LittleDiode

UK . 4 parts In-Stock

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Parana Technologies

USA . 1,970 parts In-Stock

1+ parts

$1.468

100+ parts

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$2.151

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$1.468

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$2.151

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DigiPath Technology Company

USA . 168 parts In-Stock

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$1.617

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$1.488

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168

$1.617

$1.488

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ChromeModa Solutions

Germany . 3,011 parts In-Stock

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$1.650

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$1.353

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3,011

$1.650

$1.353

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IDEA Electronic Components Group

UK . 1,886 parts In-Stock

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$1.650

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$1.485

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$1.650

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AZTECH Wire

Italy . 757 parts In-Stock

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$15.794

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757

$15.794

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One Stop Electronics

USA . 1,075 parts In-Stock

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$28.050

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$28.050

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Corphita

USA . 3,945 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,174 parts In-Stock

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Kepictronics

USA . 1,857 parts In-Stock

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1,857

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Cyclops Electronics Ltd (Excess)

UK . 100 parts In-Stock

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100

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Glotronic Ltd.

UK . 80 parts In-Stock

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80

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Assy Fe

Spain . 26 parts In-Stock

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Overview

Elevate your electronic projects with the LP395Z by Texas Instruments, a high-quality small signal BJT transistor that offers unmatched reliability and performance. With its NPN configuration and maximum collector-emitter voltage of 36V, this transistor is perfect for a wide range of applications. Whether you're a hobbyist or a professional, the LP395Z provides exceptional value and benefits, making it a must-have component for your next project. Trust in Texas Instruments' reputation for excellence and take your designs to the next level with the LP395Z.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material makes the transistor lightweight and cost-effective.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifying circuits and switching applications, making this transistor versatile.

Configuration: SINGLE

The single configuration simplifies circuit design and makes it easier to use in various electronic applications.

Package Shape: ROUND

The round package shape allows for easy mounting and handling of the transistor.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide strong mechanical connection and are suitable for manual soldering or insertion into a PCB.

No. of Terminals: 3

Having 3 terminals allows for proper connection and control of the transistor in a circuit.

Package Style (Meter): CYLINDRICAL

The cylindrical package style ensures uniform heat dissipation and efficient performance.

Maximum Collector-Emitter Voltage: 36 V

The high maximum collector-emitter voltage rating of 36V provides a wide range of voltage tolerance in different applications.

Transistor Element Material: SILICON

Silicon transistors offer high performance, low noise, and good thermal stability, making them reliable for various electronic devices.

Maximum Collector Current (IC): 0.1 A

With a maximum collector current of 0.1A, this transistor can handle moderate current levels efficiently.

Terminal Position: BOTTOM

Bottom terminal position allows for easy PCB mounting and ensures proper connection in the circuit.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) LP395Z attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Texas Instruments

Specs

Additional Features:

LOGIC LEVEL COMPATIBLE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

36 V

Configuration:

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Trade Compliance

LP395Z Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-298-0237, 5961012980237

NIIN

012980237

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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