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LMC1982CIN

Texas Instruments

LMC1982CIN by Texas Instruments

LMC1982CIN by Texas Instruments is a Tone Control Circuit IC with 80 dB Channel Separation and 0.5% Harmonic Distortion. It has 2 bands, operates b/w -40 to 85 °C, and requires 6-12V power supplies. Ideal for audio applications requiring precise tone adjustments in industrial settings.

Median Price

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Lifecycle Status

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10

In-Stock Inventory

1k+

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Vyrian

USA . 4,578 parts In-Stock

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Digiode

USA . 4,221 parts In-Stock

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Anansix

USA . 1,218 parts In-Stock

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Global Solutions Electronics Company

USA . 100 parts In-Stock

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PC Components Company LLC

USA . 54 parts In-Stock

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Bristol Electronics

USA . 54 parts In-Stock

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Semi Source

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ACDS - Activité Composants Distribution Service

France . 25 parts In-Stock

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DF Sales Co.

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Parana Technologies

USA . 792 parts In-Stock

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$0.773

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$71.740

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$0.695

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DigiPath Technology Company

USA . 2,168 parts In-Stock

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$0.851

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$0.783

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ChromeModa Solutions

Germany . 6,827 parts In-Stock

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IDEA Electronic Components Group

UK . 2,269 parts In-Stock

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$0.781

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AZTECH Wire

Italy . 435 parts In-Stock

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One Stop Electronics

USA . 1,586 parts In-Stock

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Perfect Parts

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Alle Elektronik GmbH

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Kepictronics

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Corphita

USA . 596 parts In-Stock

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Cyclops Electronics Ltd (Excess)

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A-Plus Industry Inc.

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Overview

Elevate your audio experience with the LMC1982CIN from Texas Instruments, a leading manufacturer known for delivering top-quality products. This audio control IC is designed to enhance sound performance with its advanced tone control circuit, providing crystal-clear audio output. Perfect for a wide range of applications, this IC offers customers unmatched value and benefits, including improved channel separation, low harmonic distortion, and a wide operating temperature range. Upgrade your audio systems today with the LMC1982CIN and enjoy premium sound quality like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides durability and protection to the IC.

Channel Separation: 80 dB

High channel separation ensures clear sound quality and audio performance.

Harmonic Distortion: 0.5 %

Low harmonic distortion ensures accurate reproduction of audio signals.

Power Supplies (V): 9

Suitable power supply voltage for the IC to operate efficiently.

No. of Terminals: 28

Sufficient terminals for connecting various components and configurations.

Maximum Operating Temperature: 85 °C

Wide operating temperature range for versatile applications.

No. of Bands: 2

Dual bands for tone control circuit offer flexibility in audio adjustments.

Minimum Operating Temperature: -40 °C

Operational in extreme low temperature conditions.

Technology: CMOS

CMOS technology ensures low power consumption and high noise immunity.

Maximum Supply Current: 25 mA

Low supply current requirement for energy-efficient operation.

Technical Specifications

Audio Control ICs LMC1982CIN attributes and parameters. Explore more Audio Control ICs devices from Texas Instruments

Specs

Channel Separation:

80 dB

General IC Type:

Harmonic Distortion:

.5 %

JESD-30 Code:

R-PDIP-T28

JESD-609 Code:

e0

Length:

35.725 mm

No. of Bands:

2

No. of Channels:

2

No. of Functions:

1

No. of Terminals:

28

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP28,.6

Package Shape:

Package Style (Meter):

IN-LINE

Power Supplies (V):

9

Qualification:

Not Qualified

Maximum Seated Height:

5.334 mm

Sub-Category:

Audio Control ICs

Maximum Supply Current:

25 mA

Maximum Supply Voltage (Vsup):

12 V

Minimum Supply Voltage (Vsup):

6 V

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width:

15.24 mm

Trade Compliance

LMC1982CIN General Purpose ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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