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LM6125H

Texas Instruments

LM6125H by Texas Instruments

LM6125H by Texas Instruments is a BUFFER amplifier with 50 MHz bandwidth, 7 uA bias current, and 50 V/us slow rate. Ideal for military applications due to its -55 to 125 °C operating temperature range and metal package body material.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 6,953 parts In-Stock

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Digiode

USA . 3,162 parts In-Stock

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Anansix

USA . 1,057 parts In-Stock

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LWI Electronics Inc

India . 33 parts In-Stock

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One Stop Electronics

USA . 788 parts In-Stock

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$1.410

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788

$1.410

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Parana Technologies

USA . 1,830 parts In-Stock

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$5.822

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$6.611

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DigiPath Technology Company

USA . 736 parts In-Stock

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$6.411

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$5.898

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736

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ChromeModa Solutions

Germany . 5,117 parts In-Stock

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$6.542

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$5.364

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IDEA Electronic Components Group

UK . 981 parts In-Stock

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$5.888

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981

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AZTECH Wire

Italy . 437 parts In-Stock

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$7.114

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Corphita

USA . 2,320 parts In-Stock

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Overview

Elevate your electronics projects with the LM6125H by Texas Instruments. As a trusted manufacturer in the industry, Texas Instruments delivers top-quality buffer amplifiers that provide reliable performance and precision. The LM6125H is versatile and ideal for a wide range of applications, offering customers exceptional value and functionality. Whether you're working on audio equipment, instrumentation, or communication systems, this amplifier will enhance your designs with its high-speed capabilities and efficient operation. Choose Texas Instruments for superior products that elevate your work to the next level.

Feature Benefit Bullets

Package Body Material: METAL

The metal package body provides excellent durability and protection for the internal components, making this buffer amplifier suitable for harsh industrial environments.

Maximum Input Offset Voltage: 50000 uV

With a high maximum input offset voltage, this buffer amplifier can effectively minimize errors and maintain accuracy in signal processing applications.

Maximum Average Bias Current (IIB): 7 uA

The low maximum average bias current ensures minimal power consumption and heat generation, making this buffer amplifier energy-efficient and reliable.

Package Shape: ROUND

The round package shape allows for easy integration into various systems and circuit designs, offering flexibility and convenience during installation.

No. of Terminals: 8

With 8 terminals, this buffer amplifier provides ample connectivity options for interfacing with other components and peripherals, enhancing versatility in different applications.

Package Style (Meter): CYLINDRICAL

The cylindrical package style promotes efficient heat dissipation and space-saving benefits, contributing to the overall performance and reliability of this buffer amplifier.

Maximum Supply Voltage Limit: 18 V

The high maximum supply voltage limit allows for compatibility with a wide range of power sources, ensuring reliable operation and performance in diverse voltage conditions.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature tolerance enables this buffer amplifier to withstand extreme heat environments, expanding its application range in temperature-sensitive industries.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature capability ensures reliable performance even in cold conditions, providing versatility for use in various climates and environments.

Terminal Position: BOTTOM

The bottom terminal position simplifies installation and maintenance processes, allowing for easy access and connectivity to other system components for seamless integration.

Nominal Bandwidth (3dB): 50 MHz

With a high nominal bandwidth, this buffer amplifier can effectively handle high-frequency signals with minimal distortion, ensuring accurate and reliable signal processing capabilities.

Temperature Grade: MILITARY

Designed to meet military-grade specifications, this buffer amplifier offers superior durability, reliability, and performance in rugged and demanding operational conditions.

Maximum Negative Supply Voltage Limit: -18 V

The high maximum negative supply voltage limit allows for bi-polar power configurations, enhancing flexibility and compatibility with different power supply setups.

Terminal Form: WIRE

With wire terminal form, this buffer amplifier can facilitate easy connections and wiring, ensuring secure and reliable electrical connections for efficient signal transmission.

Amplifier Type: BUFFER

As a buffer amplifier, this product provides impedance matching and signal isolation capabilities, making it a versatile and essential component in signal processing and distribution systems.

Nominal Slow Rate: 50 V/us

The high nominal slow rate allows for fast signal response and processing, making this buffer amplifier suitable for high-speed applications requiring quick signal amplification and transmission.

Technical Specifications

Buffer Amplifiers LM6125H attributes and parameters. Explore more Buffer Amplifiers devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Total Functions:

1

Sub-Category:

Buffer Amplifiers

Performance Specifications

Nominal Bandwidth (3dB):

50 MHz

Nominal Slew Rate:

50 V/us

Input Offset Voltage Limit:

50 mV

Peak Bias Current:

7 uA

Operational Characteristics

Maximum Supply Voltage:

18 V

Maximum Negative Supply Voltage:

-18 V

Lowest Operating Temperature:

-55 °C (-67 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Physical Characteristics

Total Terminals:

8

Terminal Position:

Bottom

Terminal Style:

Package Body Material:

Metal

Surface Mount:

No

Manufacturing and Reliability

Temperature Grade:

Standards

JESD-30 Code:

O-MBCY-W8

Packaging and Shipping

Package Shape:

Package Style:

Cylindrical

Trade Compliance

LM6125H Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

NSN

5962-01-414-6097, 5962014146097

NIIN

014146097

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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