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LM6125H/883

Texas Instruments

LM6125H/883 by Texas Instruments

LM6125H/883 by Texas Instruments is a military-grade buffer amplifier with 50 MHz bandwidth, 50 V/us slow rate, and 18V supply voltage limit. It is ideal for applications requiring high precision in harsh environments such as aerospace and defense systems.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,551 parts In-Stock

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7,551

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Digiode

USA . 4,577 parts In-Stock

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4,577

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Anansix

USA . 2,004 parts In-Stock

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2,004

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Distributors (Availability)

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One Stop Electronics

USA . 1,382 parts In-Stock

1+ parts

$5.410

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1,382

$5.410

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Parana Technologies

USA . 1,835 parts In-Stock

1+ parts

$5.670

100+ parts

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$6.465

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1,835

$5.670

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$6.465

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DigiPath Technology Company

USA . 1,895 parts In-Stock

1+ parts

$6.244

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1,895

$6.244

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ChromeModa Solutions

Germany . 1,896 parts In-Stock

1+ parts

$6.371

100+ parts

$5.224

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1,896

$6.371

$5.224

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IDEA Electronic Components Group

UK . 1,491 parts In-Stock

1+ parts

$6.371

100+ parts

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$5.734

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1,491

$6.371

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$5.734

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AZTECH Wire

Italy . 530 parts In-Stock

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$9.140

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530

$9.140

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Corphita

USA . 976 parts In-Stock

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976

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Overview

Experience unmatched quality and reliability with the LM6125H/883 by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments delivers top-tier buffer amplifiers that excel in military-grade applications. The LM6125H/883 provides customers with superior performance, low bias current, and a wide bandwidth to meet their strict requirements. Trust in Texas Instruments to deliver exceptional value and peace of mind with every product, ensuring your projects are completed flawlessly. Elevate your designs with the LM6125H/883 and experience the difference today.

Feature Benefit Bullets

Package Body Material: METAL

Metal package body provides excellent durability and protection for the internal components, making this buffer amplifier suitable for rugged environments and extended use.

Maximum Input Offset Voltage: 50000 uV

Low input offset voltage ensures high precision and accuracy in signal amplification, making this buffer amplifier ideal for applications requiring precise measurements.

Maximum Average Bias Current (IIB): 7 uA

Low bias current helps in reducing power consumption and minimizes distortion in the output signal, making this buffer amplifier energy-efficient and reliable.

Screening Level: MIL-STD-883

Conformance to MIL-STD-883 screening level ensures high reliability and quality standards, making this buffer amplifier suitable for critical applications where performance and durability are essential.

Package Shape: ROUND

Round package shape allows for efficient mounting and easy integration into various systems, providing versatility and flexibility in design and installation.

Nominal Bandwidth (3dB): 50 MHz

High bandwidth capability ensures fast signal processing and transmission, making this buffer amplifier suitable for high-frequency applications that require quick response times.

Temperature Grade: MILITARY

Military-grade temperature grade ensures reliable performance in extreme environmental conditions, making this buffer amplifier suitable for aerospace, defense, and other harsh environment applications.

Nominal Slow Rate: 50 V/us

High slew rate allows for fast amplification of input signals, making this buffer amplifier ideal for applications requiring quick signal response and transient handling.

Technical Specifications

Buffer Amplifiers LM6125H/883 attributes and parameters. Explore more Buffer Amplifiers devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Total Functions:

1

Sub-Category:

Buffer Amplifiers

Performance Specifications

Nominal Bandwidth (3dB):

50 MHz

Nominal Slew Rate:

50 V/us

Input Offset Voltage Limit:

50 mV

Peak Bias Current:

7 uA

Operational Characteristics

Maximum Supply Voltage:

18 V

Maximum Negative Supply Voltage:

-18 V

Lowest Operating Temperature:

-55 °C (-67 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Physical Characteristics

Total Terminals:

8

Terminal Position:

Bottom

Terminal Style:

Package Body Material:

Metal

Surface Mount:

No

Manufacturing and Reliability

Temperature Grade:

Screening Level:

MIL-STD-883

Standards

JESD-30 Code:

O-MBCY-W8

Packaging and Shipping

Package Shape:

Package Style:

Cylindrical

Trade Compliance

LM6125H/883 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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