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LM6121J/883

Texas Instruments

LM6121J/883 by Texas Instruments

LM6121J/883 by Texas Instruments is a buffer amplifier with 50 MHz bandwidth, 50000 uV max input offset voltage, and 7 uA max average bias current. It is used in MIL-STD-883 screening applications for signal buffering and amplification in electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,365 parts In-Stock

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Digiode

USA . 4,871 parts In-Stock

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4,871

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Anansix

USA . 361 parts In-Stock

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361

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Distributors (Availability)

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Parana Technologies

USA . 384 parts In-Stock

1+ parts

$1.100

100+ parts

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$1.938

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384

$1.100

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$1.938

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DigiPath Technology Company

USA . 1,257 parts In-Stock

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$1.211

100+ parts

$1.114

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1,257

$1.211

$1.114

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ChromeModa Solutions

Germany . 1,267 parts In-Stock

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$1.236

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$1.014

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1,267

$1.236

$1.014

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IDEA Electronic Components Group

UK . 536 parts In-Stock

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$1.236

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$1.112

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536

$1.236

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$1.112

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One Stop Electronics

USA . 582 parts In-Stock

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$2.410

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582

$2.410

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AZTECH Wire

Italy . 314 parts In-Stock

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$10.122

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Corphita

USA . 3,568 parts In-Stock

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Overview

Unlock a world of high-quality performance with the LM6121J/883 by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments delivers top-notch buffer amplifiers designed for a wide range of applications. With the LM6121J/883, you can expect unparalleled value, reliability, and precision in your projects. Experience the benefits of seamless signal buffering and enhanced functionality, making this product a must-have for any electronics enthusiast or professional. Elevate your designs with the LM6121J/883 and see the difference Texas Instruments can make in your work.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

The ceramic, glass-sealed package provides robust protection for the internal components, ensuring durability and reliability in various environments.

Maximum Input Offset Voltage: 50000 uV

The low input offset voltage ensures accurate signal processing and minimal distortion in the output signal.

Nominal Bandwidth (3dB): 50 MHz

The wide bandwidth allows for high-speed signal amplification, making this buffer amplifier suitable for applications requiring fast response times.

Nominal Supply Voltage / Vsup (V): 15

The nominal supply voltage of 15V provides ample power for the amplifier to operate efficiently while staying within the safe operating limits.

Maximum Average Bias Current (IIB): 7 uA

The low bias current helps minimize power consumption and reduces the risk of thermal issues in the circuit.

Technical Specifications

Buffer Amplifiers LM6121J/883 attributes and parameters. Explore more Buffer Amplifiers devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Total Functions:

1

Sub-Category:

Buffer Amplifiers

Performance Specifications

Nominal Bandwidth (3dB):

50 MHz

Nominal Slew Rate:

800 V/us

Input Offset Voltage Limit:

50 mV

Peak Bias Current:

7 uA

Operational Characteristics

Nominal Supply Voltage:

15 V

Maximum Supply Voltage:

18 V

Nominal Negative Supply Voltage (Vsup):

-15 V

Maximum Negative Supply Voltage:

-18 V

Physical Characteristics

Length:

0.4 in (10.16 mm)

Width:

0.3 in (7.62 mm)

Maximum Seated Height:

0.2 in (5.08 mm)

Total Terminals:

8

Terminal Pitch:

0.1 in (2.54 mm)

Terminal Position:

Dual

Terminal Style:

Package Body Material:

Ceramic, Glass-Sealed

Surface Mount:

No

Manufacturing and Reliability

Screening Level:

MIL-STD-883

Standards

JESD-30 Code:

R-GDIP-T8

Packaging and Shipping

Package Code:

DIP

Package Shape:

Package Style:

In-Line

Trade Compliance

LM6121J/883 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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