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JANTXV2N2905A

Texas Instruments

JANTXV2N2905A by Texas Instruments

JANTXV2N2905A by Texas Instruments is a PNP BJT transistor with hFE of 50, Vce of 60V, and Ic of 0.6A. Ideal for switching applications due to fast ton of 45ns and toff of 300ns. Packaged in a cylindrical metal body with wire terminals at the bottom.

Median Price

$17.110

Lifecycle Status

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31

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Arrow

USA . 45 parts In-Stock

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Microchip Technology

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Freelance Electronics

USA . 325 parts In-Stock

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$3.844

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$4.037

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TEDSS.com

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Bristol Electronics

USA . 240 parts In-Stock

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Digiode

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Nova Conductors

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American Microsemiconductor Inc.

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Electronic Expediters

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Vyrian

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Atlantic Semiconductor

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First Choice Components Inc.

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Sunrise Surplus Inc.

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Dan-Mar Components

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Connector Distribution Corp

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Right Parts Inc.

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ACDS - Activité Composants Distribution Service

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Mil-Aero Solutions, Inc.

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Flip Electronics

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Beltway Electronics Company

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MISTER SPROCKETS

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Netsource Technology, Inc.

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Odi Ramu Company

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North Shore Components

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Sogenti Electronics

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Resion

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Aztec Data Supply Inc.

USA . 3,044 parts In-Stock

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$0.639

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Advanced Electronics

New Zealand . 50 parts In-Stock

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$1.228

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$1.166

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$1.228

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Parana Technologies

USA . 640 parts In-Stock

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$1.446

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$2.135

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DigiPath Technology Company

USA . 407 parts In-Stock

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$1.592

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$1.465

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ChromeModa Solutions

Germany . 4,021 parts In-Stock

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$1.625

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$1.332

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IDEA Electronic Components Group

UK . 266 parts In-Stock

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$1.625

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$1.462

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Corohmni

South Africa . 105 parts In-Stock

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$1.931

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Andel Nordic

Denmark . 50 parts In-Stock

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$4.184

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AZTECH Wire

Italy . 219 parts In-Stock

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Semicontronic

India . 207 parts In-Stock

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$14.900

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$14.528

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$14.453

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Corphita

USA . 2,333 parts In-Stock

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Aranea Global

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$18.093

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Continental Prestige Electronics

USA . 1,267 parts In-Stock

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Component Stockers USA

USA . 264 parts In-Stock

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$99.990

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QUARKTWIN TECHNOLOGY LTD

USA . 11,778 parts In-Stock

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Microchip USA

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Kulean Microsystems

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SupplyDigital Components

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TANS Electronics

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West Coast Incorporated

USA . 788 parts In-Stock

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UHIMA Technologies

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Argo Parts USA

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Perfect Parts

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Problanco Electronics

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Overview

Discover the innovative JANTXV2N2905A by Texas Instruments, a high-quality PNP small signal BJT transistor perfect for switching applications. With its durable metal package body and efficient wire terminal form, this transistor offers reliable performance and easy installation. Ideal for a wide range of electronic projects, the JANTXV2N2905A provides a maximum collector-emitter voltage of 60V and a minimum DC current gain of 50, ensuring optimal functionality. Upgrade your designs with this versatile transistor from a trusted manufacturer like Texas Instruments, and experience enhanced efficiency and superior performance.

Feature Benefit Bullets

Package Body Material: METAL

The metal package body provides excellent heat dissipation and durability, making the transistor suitable for high power applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used in switching circuits, making this transistor ideal for switching applications.

Configuration: SINGLE

Single configuration simplifies circuit design and installation, making it easy to use in various applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast turn on and turn off times for efficient performance.

Terminal Form: WIRE

Wire terminals provide a secure connection and easy soldering, ensuring reliable performance in different environments.

Maximum Collector-Emitter Voltage: 60 V

With a maximum voltage rating of 60V, this transistor can handle higher voltage levels, making it suitable for a wide range of applications.

Minimum DC Current Gain (hFE): 50

A minimum DC current gain of 50 ensures consistent and stable amplification, providing reliable performance in various circuit designs.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) JANTXV2N2905A attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Texas Instruments

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

50

JEDEC-95 Code:

TO-39

JESD-30 Code:

O-MBCY-W3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

300 ns

Maximum Turn On Time (ton):

45 ns

Trade Compliance

JANTXV2N2905A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-022-6853, 5961010226853, 5961-01-181-4824, 5961011814824, 5961-01-287-4503, 5961012874503, 5961-01-149-3877, 5961011493877

NIIN

010226853, 011814824, 012874503, 011493877

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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