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HPA00398DRBR

Texas Instruments

HPA00398DRBR by Texas Instruments

Texas Instruments' HPA00398DRBR is an 8-terminal audio amplifier with a max output power of 1.7W, suitable for industrial applications. Operating temperature ranges from -40 to 85°C, with a supply voltage of 2.5-5.5V. This CMOS technology device features a small outline package and low noise figure of 105dB.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,555 parts In-Stock

1+ parts

-

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6,555

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Digiode

USA . 3,948 parts In-Stock

1+ parts

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3,948

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 816 parts In-Stock

1+ parts

$2.373

100+ parts

-

1k+ parts

$2.871

10k+ parts

-

816

$2.373

-

$2.871

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DigiPath Technology Company

USA . 2,139 parts In-Stock

1+ parts

$2.613

100+ parts

-

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2,139

$2.613

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ChromeModa Solutions

Germany . 3,150 parts In-Stock

1+ parts

$2.666

100+ parts

$2.186

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-

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3,150

$2.666

$2.186

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IDEA Electronic Components Group

UK . 1,176 parts In-Stock

1+ parts

$2.666

100+ parts

-

1k+ parts

$2.399

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1,176

$2.666

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$2.399

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One Stop Electronics

USA . 414 parts In-Stock

1+ parts

$10.800

100+ parts

-

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414

$10.800

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AZTECH Wire

Italy . 388 parts In-Stock

1+ parts

$19.819

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388

$19.819

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Corphita

USA . 3,288 parts In-Stock

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3,288

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Microchip USA

USA . 1,977 parts In-Stock

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1,977

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Overview

Enhance your audio experience with the HPA00398DRBR by Texas Instruments. Known for their superior quality and reliability, Texas Instruments delivers top-notch audio amplifiers perfect for a variety of applications. This small outline, heat sink package boasts a nominal output power of 1.7W, providing clear and powerful sound. With a wide operating temperature range and low supply voltage requirements, this audio amplifier offers exceptional value and performance. Upgrade your audio system today with the HPA00398DRBR and enjoy high-quality sound like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material is lightweight and durable, making the amplifier easy to handle and resistant to damage during handling or installation.

Surface Mount: YES

Surface mount design allows for easy and convenient installation on circuit boards, saving space and making the amplifier suitable for compact electronic devices.

General IC Type: AUDIO AMPLIFIER

Being specifically designed as an audio amplifier ensures high-quality output audio signals, making it ideal for use in audio applications such as speakers or headphones.

Nominal Output Power: 1.7 W

With a nominal output power of 1.7W, this amplifier is capable of delivering sufficient power to drive small to medium-sized speakers or headphones effectively.

Minimum Supply Voltage (Vsup): 2.5 V

The low minimum supply voltage requirement of 2.5V allows for efficient power consumption, making the amplifier suitable for battery-operated devices or low-power applications.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, ensuring efficient operation with minimal interference or distortion in the audio signal.

Technical Specifications

Audio & Video Amplifiers HPA00398DRBR attributes and parameters. Explore more Audio & Video Amplifiers devices from Texas Instruments

Specs

Nominal Bandwidth:

.02 kHz

General IC Type:

JESD-30 Code:

S-PDSO-N8

JESD-609 Code:

e4

Length:

3 mm

Moisture Sensitivity Level (MSL):

2

Nominal Noise Figure:

105 dB

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Nominal Output Power:

1.7 W

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Maximum Seated Height:

1 mm

Maximum Supply Current:

6 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2.5 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

3 mm

Trade Compliance

HPA00398DRBR General Purpose ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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