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HPA00194DGNR

Texas Instruments

HPA00194DGNR by Texas Instruments

Texas Instruments' HPA00194DGNR is an 8-terminal audio amplifier with a nominal output power of 1.25W and a max supply voltage of 5.5V. This CMOS technology device operates in industrial temperature grades, offering a nominal noise figure of 104dB. Ideal for audio applications requiring small outline packages with thin profiles and heat sinks.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,583 parts In-Stock

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7,583

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Digiode

USA . 4,559 parts In-Stock

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4,559

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Distributors (Availability)

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Parana Technologies

USA . 2,229 parts In-Stock

1+ parts

$0.802

100+ parts

-

1k+ parts

$1.781

10k+ parts

-

2,229

$0.802

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$1.781

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ChromeModa Solutions

Germany . 1,675 parts In-Stock

1+ parts

$0.901

100+ parts

$0.739

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-

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1,675

$0.901

$0.739

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IDEA Electronic Components Group

UK . 1,064 parts In-Stock

1+ parts

$0.901

100+ parts

-

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$0.811

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1,064

$0.901

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$0.811

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AZTECH Wire

Italy . 817 parts In-Stock

1+ parts

$9.672

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817

$9.672

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One Stop Electronics

USA . 1,049 parts In-Stock

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$21.800

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1,049

$21.800

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QUARKTWIN TECHNOLOGY LTD

USA . 18,595 parts In-Stock

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18,595

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Authorized Procurement Solutions

USA . 4,000 parts In-Stock

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4,000

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Corphita

USA . 3,229 parts In-Stock

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3,229

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A-Z Elektronik GmbH

Germany . 1,754 parts In-Stock

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1,754

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DigiPath Technology Company

USA . 121 parts In-Stock

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$0.812

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121

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$0.812

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Overview

Elevate your audio experience with the HPA00194DGNR by Texas Instruments. Crafted with precision and expertise, this audio amplifier is designed to deliver top-notch performance and unparalleled sound quality. Ideal for a range of applications in the audio and video industry, this product offers customers value like no other. With its compact size, efficient heat dissipation, and wide operating temperature range, the HPA00194DGNR ensures reliability and durability. Upgrade your audio systems today and enjoy crystal clear sound with this exceptional Texas Instruments amplifier.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material ensures durability and reliability in various operating conditions.

Surface Mount: YES

Being surface mountable, this amplifier can easily be integrated into circuit boards, reducing assembly time and complexity.

Nominal Output Power: 1.25 W

With a nominal output power of 1.25W, this amplifier can provide sufficient amplification for audio signals in various applications.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature of 85°C ensures that this amplifier can withstand elevated temperatures without compromising performance.

Nominal Noise Figure: 104 dB

With a low nominal noise figure of 104dB, this amplifier can deliver clean and clear audio signals with minimal interference.

Technology: CMOS

Utilizing CMOS technology, this amplifier offers low power consumption, high integration capabilities, and enhanced reliability.

Technical Specifications

Audio & Video Amplifiers HPA00194DGNR attributes and parameters. Explore more Audio & Video Amplifiers devices from Texas Instruments

Specs

Nominal Bandwidth:

.02 kHz

General IC Type:

JESD-30 Code:

S-PDSO-G8

JESD-609 Code:

e4

Length:

3 mm

Moisture Sensitivity Level (MSL):

1

Nominal Noise Figure:

104 dB

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Nominal Output Power:

1.25 W

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Maximum Seated Height:

1.1 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2.5 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD SILVER

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

3 mm

Trade Compliance

HPA00194DGNR General Purpose ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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