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HD3SS212ZQET

Texas Instruments

HD3SS212ZQET by Texas Instruments

HD3SS212ZQET by Texas Instruments is a 48-terminal differential multiplexer with a 3.3V supply voltage, suitable for industrial applications. It features a max on-state resistance of 12 ohm, fast switch-on/off times of 350 ns, and offers common output functionality. The package is a square grid array made of plastic/epoxy material, with surface mount capability and compact dimensions of 5mm x 5mm x 1mm.

Median Price

$2.540

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 182 parts In-Stock

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$2.540

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$2.410

182

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$2.410

Distributors (In-Stock)

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Vyrian

USA . 1,083 parts In-Stock

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$2.540

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Digiode

USA . 1,247 parts In-Stock

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Prism Electronics

USA . 189 parts In-Stock

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Bristol Electronics

USA . 58 parts In-Stock

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$1.344

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Microfarads

USA . 56 parts In-Stock

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Distributors (Availability)

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Parana Technologies

USA . 512 parts In-Stock

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$12.602

100+ parts

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$13.056

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512

$12.602

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$13.056

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DigiPath Technology Company

USA . 843 parts In-Stock

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$13.876

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843

$13.876

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ChromeModa Solutions

Germany . 2,371 parts In-Stock

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$14.159

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$11.610

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$14.159

$11.610

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IDEA Electronic Components Group

UK . 1,258 parts In-Stock

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$14.159

100+ parts

$13.451

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$12.743

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1,258

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$13.451

$12.743

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Northwest PG Solutions

USA . 1,253 parts In-Stock

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Corphita

USA . 657 parts In-Stock

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Perfect Parts

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Microchip USA

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Native Components

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Overview

Experience seamless and reliable signal switching with the HD3SS212ZQET by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments delivers top-quality multiplexers & switches for a wide range of applications. This versatile product offers customers unmatched value and benefits, allowing for smooth operation and precise control. Trust Texas Instruments to provide cutting-edge solutions that meet your needs and exceed your expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides good insulation and protection for the components inside, ensuring durability and longevity of the product.

Nominal Supply Voltage (Vsup): 3.3 V

Lower supply voltage can lead to reduced power consumption, making this product energy efficient.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, this product can withstand harsh environmental conditions, making it suitable for industrial applications.

Output (V): COMMON OUTPUT

Common output simplifies the design and integration process, making it easier to connect to other components in a system.

No. of Channels: 2

Having multiple channels allows for flexible routing of signals, increasing the versatility of this multiplexer/switch product.

Technical Specifications

Multiplexers & Switches HD3SS212ZQET attributes and parameters. Explore more Multiplexers & Switches devices from Texas Instruments

Specs

Other IC type:

JESD-30 Code:

S-PBGA-B48

JESD-609 Code:

e1

Length:

5 mm

Moisture Sensitivity Level (MSL):

3

Normal Position (V):

NO

No. of Channels:

2

No. of Functions:

1

No. of Terminals:

48

Nominal Off-state Isolation:

22 dB

Nominal On-state Resistance Match:

1.5 ohm

Maximum On-state Resistance (Ron):

12 ohm

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Output (V):

COMMON OUTPUT

Package Body Material:

PLASTIC/EPOXY

Package Code:

BGA

Package Shape:

Package Style (Meter):

GRID ARRAY

Peak Reflow Temperature (C):

260

Maximum Seated Height:

1 mm

Maximum Supply Current (Isup):

5 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage (Vsup):

3.3 V

Surface Mount:

YES

Maximum Switch-off Time:

350 ns

Maximum Switch-on Time:

350 ns

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

.5 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width (mm):

5 mm

Trade Compliance

HD3SS212ZQET Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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