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SN74LVC1G3157DBVR

Texas Instruments

SN74LVC1G3157DBVR by Texas Instruments

SN74LVC1G3157DBVR by Texas Instruments is a SPDT switch with 6 terminals, operating at temperatures from -40 to 85 °C. It has a max on-state resistance of 30 ohm and a switching time of 14 ns, suitable for industrial applications requiring common output switching functions.

Median Price

$0.134

Lifecycle Status

Suppliers In-Stock

35

In-Stock Inventory

1k+

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Chip1Stop

Japan . 6,407 parts In-Stock

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Arrow

USA . 764 parts In-Stock

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DigiKey

USA . 103,882 parts In-Stock

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Mouser Electronics

USA . 45,348 parts In-Stock

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UK . 2,980 parts In-Stock

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Verical

USA . 764 parts In-Stock

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Digiode

USA . 3,483 parts In-Stock

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Ozdisan Elektronik

Türkiye . 8,698 parts In-Stock

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Nova Conductors

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TME

Poland . 4,099 parts In-Stock

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Maritex

Poland . 24,089 parts In-Stock

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Component Electronics Inc.

Canada . 17,600 parts In-Stock

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Vyrian

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Speed Components Ltd

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HZD GmbH

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NAC Semi

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Ampacity Inc.

Singapore . 39,423 parts In-Stock

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Corphita

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Argo Parts USA

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Continental Prestige Electronics

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Netroflash

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Component Stockers USA

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Corohmni

South Africa . 654 parts In-Stock

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Parana Technologies

USA . 565 parts In-Stock

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DigiPath Technology Company

USA . 701 parts In-Stock

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ChromeModa Solutions

Germany . 1,415 parts In-Stock

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IDEA Electronic Components Group

UK . 353 parts In-Stock

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Advanced Electronics

New Zealand . 2,000 parts In-Stock

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Modulus Dynamics

Lithuania . 1,098 parts In-Stock

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S.R.D Solutions

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GreenTree Electronics

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iodParts Technologies Inc.

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Authorized Procurement Solutions

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Robosynatics

Brazil . 2,397 parts In-Stock

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Lucentia Tech

USA . 2,397 parts In-Stock

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Alle Elektronik GmbH

Germany . 2,115 parts In-Stock

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Overview

Enhance your electronic designs with the SN74LVC1G3157DBVR by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments delivers top-quality products like this SPDT multiplexer that is perfect for a wide range of applications. With its small outline, low profile package and industrial temperature grade, this switch offers exceptional performance and reliability. Experience seamless operation, precise switching, and efficient power management with the SN74LVC1G3157DBVR. Upgrade your projects today with this high-quality component from Texas Instruments.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is widely used for electronic components due to its durability and resistance to environmental factors, making this product reliable and long-lasting.

Surface Mount: YES

This feature allows for easy installation onto circuit boards, reducing the overall assembly time and cost.

Nominal Supply Voltage (Vsup): 2.3 V

This voltage level is ideal for many applications and ensures compatibility with various systems.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, this product can withstand harsh environmental conditions and maintain optimal performance.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making this product energy-efficient and reliable in noisy environments.

Technical Specifications

Multiplexers & Switches SN74LVC1G3157DBVR attributes and parameters. Explore more Multiplexers & Switches devices from Texas Instruments

Specs

Other IC type:

Nominal Bandwidth:

340 kHz

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e4

Length:

2.9 mm

Moisture Sensitivity Level (MSL):

1

Normal Position (V):

NC

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

6

Nominal Off-state Isolation:

57 dB

Nominal On-state Resistance Match:

.1 ohm

Maximum On-state Resistance (Ron):

30 ohm

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Output (V):

COMMON OUTPUT

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP6,.11,37

Package Shape:

Package Style (Meter):

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

1.8/5

Qualification:

Not Qualified

Maximum Seated Height:

1.45 mm

Sub-Category:

Multiplexers or Switches

Maximum Supply Current (Isup):

.035 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage (Vsup):

2.3 V

Surface Mount:

YES

Maximum Switch-off Time:

7.5 ns

Maximum Switch-on Time:

14 ns

Switching (V):

BREAK-BEFORE-MAKE

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

GULL WING

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width (mm):

1.6 mm

Trade Compliance

SN74LVC1G3157DBVR Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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