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DM8147BCIS0

Texas Instruments

DM8147BCIS0 by Texas Instruments

DM8147BCIS0 by Texas Instruments is a MICROPROCESSOR CIRCUIT with 684 terminals in GRID ARRAY package. It operates at 3.14-3.47 V, CMOS technology, and has a peak reflow temp of 250°C. Ideal for applications requiring high processing power in compact form factors.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 3,687 parts In-Stock

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Digiode

USA . 2,453 parts In-Stock

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Native Components

USA . 311 parts In-Stock

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$0.580

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311

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Northwest PG Solutions

USA . 124 parts In-Stock

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$0.638

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AZTECH Wire

Italy . 516 parts In-Stock

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$6.873

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One Stop Electronics

USA . 761 parts In-Stock

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$19.000

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Corohmni

South Africa . 2,087 parts In-Stock

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$62.764

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Parana Technologies

USA . 1,069 parts In-Stock

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$73.562

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DigiPath Technology Company

USA . 1,742 parts In-Stock

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$81.001

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ChromeModa Solutions

Germany . 1,624 parts In-Stock

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$82.654

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$67.776

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IDEA Electronic Components Group

UK . 1,173 parts In-Stock

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$82.654

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$78.521

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$74.389

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Corphita

USA . 388 parts In-Stock

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Overview

Experience next-level performance and reliability with the Texas Instruments DM8147BCIS0. As a leader in semiconductor technology, Texas Instruments delivers top-notch quality and innovation in every product. The DM8147BCIS0 falls under the category of Other Function uPs,uCs & Peripheral ICs, making it versatile for a wide range of applications. With a focus on value and benefits for customers, this product offers unmatched efficiency and functionality. Upgrade your projects with the DM8147BCIS0 and see the difference for yourself.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight, durable, and cost-effective, making the product suitable for a wide range of applications.

Surface Mount: YES

Surface mount technology allows for easy and efficient assembly, saving time and reducing production costs.

Maximum Supply Voltage: 3.47 V

High maximum supply voltage ensures compatibility with a variety of power sources, increasing the flexibility of the product.

Package Shape: SQUARE

Square packages are space-efficient and easy to handle, making them ideal for densely populated circuit boards.

No. of Terminals: 684

A high number of terminals allow for a greater number of connections, enabling complex circuit designs and functionalities.

Package Style (Meter): GRID ARRAY, HEAT SINK/SLUG

Grid array packaging with heat sink or slug enhances thermal management, ensuring the optimal performance and reliability of the product.

Minimum Supply Voltage: 3.14 V

Low minimum supply voltage allows for operation in low-power scenarios, increasing energy efficiency and extending battery life.

Terminal Finish: TIN SILVER COPPER

This terminal finish provides excellent conductivity, corrosion resistance, and solderability, ensuring long-term reliability of the connections.

Terminal Position: BOTTOM

Bottom terminal position facilitates easy and secure soldering, improving the overall robustness of the product assembly.

Maximum Seated Height: 3.06 mm

Low seated height reduces the overall profile of the product, making it suitable for compact and slim designs.

Width: 23 mm

Moderate width allows for a good balance between space efficiency and ease of handling during installation and maintenance.

Maximum Time At Peak Reflow Temperature (s): 30

Extended time at peak reflow temperature allows for thorough soldering of the components, ensuring strong and reliable connections.

Peak Reflow Temperature °C: 250

High peak reflow temperature enables fast and efficient soldering processes, reducing production time and costs.

Length: 23 mm

Moderate length provides a compact form factor, making the product suitable for applications with limited space constraints.

Peripheral IC Type: MICROPROCESSOR CIRCUIT

Inclusion of a microprocessor circuit enhances the processing power and functionality of the product, enabling advanced applications and features.

Technology: CMOS

CMOS technology offers low power consumption, high noise immunity, and compatibility with a wide range of voltages, enhancing the performance and efficiency of the product.

Terminal Form: BALL

Ball terminals provide reliable and secure connections, ensuring stable operation and longevity of the product.

Nominal Supply Voltage: 3.3 V

Stable nominal supply voltage ensures consistent performance and compatibility with standard power sources, making the product reliable and easy to integrate.

Terminal Pitch: 0.8 mm

Compact terminal pitch allows for high-density packaging, enabling smaller and more efficient circuit designs.

Moisture Sensitivity Level (MSL): 4

MSL 4 indicates moderate sensitivity to moisture, requiring standard handling and storage procedures to prevent damage and ensure product reliability.

Technical Specifications

Other Function uPs,uCs & Peripheral ICs DM8147BCIS0 attributes and parameters. Explore more Other Function uPs,uCs & Peripheral ICs devices from Texas Instruments

Specs

Additional Features:

IT ALSO OPERATES IN 1.71V MINIMUM SUPPLY

JESD-30 Code:

S-PBGA-B684

JESD-609 Code:

e1

Length:

23 mm

Moisture Sensitivity Level (MSL):

4

No. of Terminals:

684

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, HEAT SINK/SLUG

Peak Reflow Temperature (C):

250

Maximum Seated Height:

3.06 mm

Maximum Supply Voltage:

3.47 V

Minimum Supply Voltage:

3.14 V

Nominal Supply Voltage:

3.3 V

Surface Mount:

YES

Technology:

CMOS

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

23 mm

Peripheral IC Type:

Trade Compliance

DM8147BCIS0 Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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