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CDCVF2509PWRG4

Texas Instruments

CDCVF2509PWRG4 by Texas Instruments

CDCVF2509PWRG4 clock driver by Texas Instruments has a propagation delay of 3.9 ns, operates at a nominal voltage of 3.3V, and offers 24 terminals in a small outline package. Ideal for applications requiring precise timing control and signal buffering in electronic circuits with load capacitance up to 25 pF.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 5,629 parts In-Stock

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Digiode

USA . 2,629 parts In-Stock

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Chip Stock

USA . 571 parts In-Stock

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571

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Native Components

USA . 29 parts In-Stock

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$0.738

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29

$0.738

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Northwest PG Solutions

USA . 427 parts In-Stock

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$0.812

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Andel Nordic

Denmark . 575 parts In-Stock

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$5.578

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$5.354

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575

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$5.354

AZTECH Wire

Italy . 512 parts In-Stock

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$19.253

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$19.253

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Parana Technologies

USA . 1,785 parts In-Stock

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$28.434

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$47.430

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DigiPath Technology Company

USA . 694 parts In-Stock

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$31.309

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ChromeModa Solutions

Germany . 1,263 parts In-Stock

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$31.948

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$26.197

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IDEA Electronic Components Group

UK . 1,044 parts In-Stock

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$31.948

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$30.351

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$28.753

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One Stop Electronics

USA . 1,429 parts In-Stock

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Kepictronics

USA . 2,660 parts In-Stock

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Corphita

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Microchip USA

USA . 1,659 parts In-Stock

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Overview

Elevate your projects with the CDCVF2509PWRG4 by Texas Instruments, a clock driver and buffer that embodies quality and reliability. Texas Instruments is renowned for producing top-of-the-line components, and this product is no exception. Ideal for a wide range of applications, this clock driver ensures precision timing and seamless operation. With a nominal supply voltage of 3.3V and a propagation delay of just 3.9ns, this component offers exceptional performance. Say goodbye to delays and inaccuracies in your designs - choose the CDCVF2509PWRG4 for unparalleled value and efficiency.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used in the package body helps to reduce the overall weight of the product, making it more convenient for installation and handling.

Propagation Delay At Nominal Supply: 3.9 ns

The low propagation delay ensures quick signal processing, making this clock driver and buffer suitable for high-speed applications where timing precision is critical.

Surface Mount: YES

The surface mount capability allows for easy and compact installation on PCBs, saving space in electronic designs.

Nominal Supply Voltage / Vsup (V): 3.3

The 3.3V supply voltage is common in many electronic systems, providing compatibility and ease of integration with existing setups.

Load Capacitance (CL) 25 pF

The low load capacitance of 25 pF ensures minimal signal distortion and helps maintain signal integrity in high-frequency applications.

Technology: BICMOS

The use of BiCMOS technology combines the benefits of both bipolar and CMOS technologies, offering high-speed performance and low power consumption.

Minimum fmax 175 MHz

The high maximum operating frequency of 175 MHz allows for reliable operation in applications that demand fast signal processing.

Technical Specifications

Clock Drivers & Buffers CDCVF2509PWRG4 attributes and parameters. Explore more Clock Drivers & Buffers devices from Texas Instruments

Specs

Family:

2509

Input Conditioning:

STANDARD

JESD-30 Code:

R-PDSO-G24

JESD-609 Code:

e4

Length:

7.8 mm

Load Capacitance (CL):

25 pF

Logic IC Type:

Maximum I (ol):

12 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inverted Outputs:

0

No. of Terminals:

24

No. of True Outputs:

9

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

0 Cel

Output Characteristics:

3-STATE WITH SERIES RESISTOR

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP24,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Propagation Delay At Nominal Supply:

3.9 ns

Propagation Delay (tpd):

3.9 ns

Qualification:

Not Qualified

Maximum Same Edge Skew (tskwd):

.1 ns

Maximum Seated Height:

1.2 mm

Sub-Category:

Clock Drivers

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

BICMOS

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

4.4 mm

Minimum fmax:

175 MHz

Trade Compliance

CDCVF2509PWRG4 Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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