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CDCF5801DBQRG4

Texas Instruments

CDCF5801DBQRG4 by Texas Instruments

CDCF5801DBQRG4 clock driver by Texas Instruments operates at 3.3V, with a max frequency of 280MHz and 24 terminals in a small outline package. It is designed for industrial applications requiring precise timing synchronization and signal buffering.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,231 parts In-Stock

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Vyrian

USA . 3,117 parts In-Stock

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Quantum Digital Technology

USA . 1,715 parts In-Stock

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Distributors (Availability)

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Northwest PG Solutions

USA . 1,273 parts In-Stock

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$3.509

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$3.509

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Andel Nordic

Denmark . 4,140 parts In-Stock

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$7.082

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$6.799

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$6.799

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$7.082

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$6.799

AZTECH Wire

Italy . 880 parts In-Stock

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$10.132

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Parana Technologies

USA . 743 parts In-Stock

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$12.462

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$12.902

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743

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DigiPath Technology Company

USA . 2,235 parts In-Stock

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$13.722

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$12.624

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$13.722

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IDEA Electronic Components Group

UK . 1,163 parts In-Stock

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$14.002

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$13.302

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$12.602

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ChromeModa Solutions

Germany . 691 parts In-Stock

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$14.002

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$11.482

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One Stop Electronics

USA . 473 parts In-Stock

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$39.000

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Corphita

USA . 3,839 parts In-Stock

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Microchip USA

USA . 1,656 parts In-Stock

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Kepictronics

USA . 1,040 parts In-Stock

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Native Components

USA . 132 parts In-Stock

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$3.094

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Overview

Looking for a reliable clock driver and buffer for your electronic devices? Look no further than the CDCF5801DBQRG4 by Texas Instruments! With a reputation for quality and innovation, Texas Instruments delivers top-notch products that meet the highest industry standards. The CDCF5801DBQRG4 is perfect for a wide range of applications in the Clock Drivers & Buffers category, providing stable and efficient performance. Experience the value and benefits of this product with its advanced features and excellent functionality. Upgrade your electronics with Texas Instruments today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and reliability of the package for long term usage.

Surface Mount: YES

Being surface mountable makes it easier to integrate this product onto circuit boards, saving space and reducing assembly time.

Nominal Supply Voltage / Vsup (V): 3.3

Operating at a nominal supply voltage of 3.3V makes it compatible with a wide range of systems and power sources.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85°C, this product can withstand high temperature conditions, making it suitable for industrial environments.

Output Characteristics: 3-STATE

The 3-STATE output characteristics allow for flexibility in managing output signals, enhancing the versatility of this product.

Technology: CMOS

The use of CMOS technology ensures low power consumption and high noise immunity, making this product energy efficient and reliable.

Technical Specifications

Clock Drivers & Buffers CDCF5801DBQRG4 attributes and parameters. Explore more Clock Drivers & Buffers devices from Texas Instruments

Specs

Additional Features:

DIFFERENTIAL/SINGLE-ENDED OUTPUT AVAILABLE

Family:

5801

Input Conditioning:

STANDARD

JESD-30 Code:

R-PDSO-G24

JESD-609 Code:

e4

Length:

8.65 mm

Logic IC Type:

Maximum I (ol):

16 Amp

Moisture Sensitivity Level (MSL):

2

No. of Functions:

1

No. of Inverted Outputs:

0

No. of Terminals:

24

No. of True Outputs:

1

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SSOP24,.24

Package Shape:

Package Style (Meter):

SMALL OUTLINE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Maximum Power Supply Current (ICC):

75 mA

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Sub-Category:

Clock Drivers

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.635 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

3.9 mm

Minimum fmax:

280 MHz

Trade Compliance

CDCF5801DBQRG4 Logic ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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