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CD4082BF3A

Texas Instruments

CD4082BF3A by Texas Instruments

CD4082BF3A by Texas Instruments is a CMOS Logic Gates IC with 2 functions, 4 inputs, and 250 ns propagation delay at 5V. It operates in military-grade applications with a temperature range of -55 to 125 °C and has a max supply voltage of 18V.

Median Price

$11.680

Lifecycle Status

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Chip1Stop

Japan . 13 parts In-Stock

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Arrow

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DigiKey

USA . 1,957 parts In-Stock

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Rochester

USA . 1,936 parts In-Stock

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$10.450

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$9.830

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Verical

USA . 1,473 parts In-Stock

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$12.287

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Ace Electronics

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Bristol Electronics

USA . 17 parts In-Stock

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$7.840

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$3.920

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Digiode

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Vyrian

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TME

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DigiKey Marketplace

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Electronic Expediters

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Corel Iberica Componentes, S.L.

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Sogenti Electronics

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LWI Electronics Inc

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Whistler Technology

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PC Components Company LLC

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Manoshevitz Elec. Sales

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Quantum Digital Technology

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ComSIT Distribution GmbH

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Odi Ramu Company

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Legend Electronics Inc.

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Resion

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Corphita

USA . 2,164 parts In-Stock

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$7.918

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Component Stockers USA

USA . 3,981 parts In-Stock

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$10.110

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$9.510

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$7.630

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Parana Technologies

USA . 1,973 parts In-Stock

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$23.276

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$2,161.545

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$20.949

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DigiPath Technology Company

USA . 1,675 parts In-Stock

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ChromeModa Solutions

Germany . 5,042 parts In-Stock

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IDEA Electronic Components Group

UK . 1,024 parts In-Stock

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Native Components

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Microchip USA

USA . 942 parts In-Stock

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$27.850

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Northwest PG Solutions

USA . 92 parts In-Stock

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$29.667

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$26.700

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QUARKTWIN TECHNOLOGY LTD

USA . 24,437 parts In-Stock

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A-Z Elektronik GmbH

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Kepictronics

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Alle Elektronik GmbH

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Glotronic Ltd.

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Supply Digital

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Assy Fe

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Overview

Elevate your projects with the CD4082BF3A by Texas Instruments, a top-tier manufacturer known for its superior quality and reliability. This logic gate offers unparalleled performance with a fast propagation delay of 250 ns, making it ideal for applications requiring precision and speed. Whether you're designing in aerospace or defense industries, this product's MILITARY-grade temperature rating ensures optimal functionality in harsh environments. Trust in Texas Instruments to deliver cutting-edge technology that surpasses expectations and enhances your work every step of the way.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

The ceramic and glass-sealed package body materials offer durability and protection for the logic gates, ensuring reliable performance even in harsh environments.

Propagation Delay At Nominal Supply: 250 ns

The fast propagation delay of 250 ns ensures quick response times for processing signals, making these logic gates ideal for high-speed applications.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard supply voltage of 5V makes these logic gates compatible with many existing circuit designs and power sources.

No. of Inputs: 4

Having 4 inputs allows for more complex logic operations to be performed, providing flexibility in circuit design and functionality.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature of 125°C ensures the logic gates can withstand elevated operating conditions without sacrificing performance.

Technology: CMOS

Utilizing CMOS technology offers low power consumption, high noise immunity, and compatibility with a wide range of voltage levels, making these logic gates efficient and versatile.

Technical Specifications

Logic Gates CD4082BF3A attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Family:

4000/14000/40000

JESD-30 Code:

R-GDIP-T14

JESD-609 Code:

e0

Length:

19.56 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

1.5 Amp

No. of Functions:

2

No. of Inputs:

4

No. of Terminals:

14

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

DIP

Package Equivalence Code:

DIP14,.3

Package Shape:

Package Style (Meter):

IN-LINE

Packing Method:

TUBE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5/15

Maximum Power Supply Current (ICC):

.15 mA

Propagation Delay At Nominal Supply:

250 ns

Propagation Delay (tpd):

250 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Screening Level:

38535Q/M;38534H;883B

Maximum Seated Height:

5.08 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

18 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

7.62 mm

Trade Compliance

CD4082BF3A Logic ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

NSN

5962-01-208-9465, 5962012089465

NIIN

012089465

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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