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CD40109BF

Texas Instruments

CD40109BF by Texas Instruments

CD40109BF by Texas Instruments is a 4-bit bus driver with 600 ns propagation delay at 5V. It features 3-STATE output, -55 to 125 °C operating temp, and 6.8A max I (ol). Ideal for military-grade applications requiring true output polarity control in a compact IN-LINE package.

Median Price

$14.352

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (Authorized)

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Arrow

USA . 25 parts In-Stock

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$14.352

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American Microsemiconductor Inc.

USA . 19 parts In-Stock

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$6.680

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Vyrian

USA . 6,300 parts In-Stock

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Digiode

USA . 2,370 parts In-Stock

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LWI Electronics Inc

India . 121 parts In-Stock

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Manotoh

Italy . 99 parts In-Stock

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Electronic Expediters

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Prism Electronics

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PC Components Company LLC

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Bristol Electronics

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NAC Semi

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Sogenti Electronics

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Elcom Components

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Andel Nordic

Denmark . 2,101 parts In-Stock

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$3.359

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$3.225

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$3.225

2,101

$3.359

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$3.225

Parana Technologies

USA . 1,591 parts In-Stock

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$11.104

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$1,031.141

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$9.993

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$1,031.141

$9.993

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DigiPath Technology Company

USA . 1,628 parts In-Stock

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$12.226

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ChromeModa Solutions

Germany . 4,032 parts In-Stock

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$12.476

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$10.230

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$12.476

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IDEA Electronic Components Group

UK . 420 parts In-Stock

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$12.476

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$11.852

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$11.228

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Authorized Procurement Solutions

USA . 7,000 parts In-Stock

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Microchip USA

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Supply Digital

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Native Components

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Corphita

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Northwest PG Solutions

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Kepictronics

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Perfect Parts

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A-Plus Industry Inc.

USA . 6 parts In-Stock

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Overview

Enhance your electronic projects with the CD40109BF by Texas Instruments, a high-quality bus driver & transceiver that guarantees reliable performance. With a military-grade temperature grade and CMOS technology, this component offers unmatched durability and efficiency. Perfect for applications requiring 3-state output characteristics, this product provides seamless integration and superior control. Trust Texas Instruments for cutting-edge solutions that deliver value and excellence to your projects. Elevate your designs with the CD40109BF today!

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

Enhanced durability and reliability due to the use of ceramic and glass-sealed materials.

Propagation Delay at Nominal Supply: 600 ns

Fast propagation delay ensures efficient communication and operation within the bus system.

Nominal Supply Voltage / Vsup (V): 5

Suitable voltage for stable operation and compatibility with standard bus systems.

Output Characteristics: 3-STATE

3-state output allows for high flexibility in bus communication, enabling multiple devices to share the transmission line.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making it ideal for bus driver and transceiver applications.

Technical Specifications

Bus Driver & Transceivers CD40109BF attributes and parameters. Explore more Bus Driver & Transceivers devices from Texas Instruments

Specs

Additional Features:

LOW TO HIGH VOLTAGE TRANSLATOR

Control Type:

ENABLE HIGH

Count Direction:

UNIDIRECTIONAL

Family:

4000/14000/40000

JESD-30 Code:

R-GDIP-T16

JESD-609 Code:

e0

Length:

19.43 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

6.8 Amp

No. of Bits:

4

No. of Functions:

1

No. of Ports:

2

No. of Terminals:

16

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output Characteristics:

3-STATE

Output Polarity:

TRUE

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

DIP

Package Shape:

Package Style (Meter):

IN-LINE

Packing Method:

TUBE

Maximum Power Supply Current (ICC):

.018 mA

Propagation Delay At Nominal Supply:

600 ns

Propagation Delay (tpd):

600 ns

Qualification:

Not Qualified

Maximum Seated Height:

5.08 mm

Maximum Supply Voltage (Vsup):

18 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Translation:

N/A

Width:

7.62 mm

Trade Compliance

CD40109BF Logic ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

NSN

5962-01-084-3948, 5962010843948, 5962-99-736-1462, 5962997361462

NIIN

010843948, 997361462

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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