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CD40109BF3A

Texas Instruments

CD40109BF3A by Texas Instruments

CD40109BF3A by Texas Instruments is a 4-bit bus driver with 600 ns propagation delay at 5V. It features 16 terminals, 6.8 Amp I (ol), and operates in a temperature range of -55 to 125 °C. Ideal for military applications due to its CMOS technology and TRUE output polarity.

Median Price

$24.890

Lifecycle Status

Suppliers In-Stock

15

In-Stock Inventory

1k+

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Rochester

USA . 3 parts In-Stock

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$24.890

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$22.270

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$20.960

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Freelance Electronics

USA . 7 parts In-Stock

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$7.390

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$7.759

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NAC Semi

USA . 712 parts In-Stock

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Digiode

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Vyrian

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MRC Electronics

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ACDS - Activité Composants Distribution Service

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Mil-Aero Solutions, Inc.

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ComSIT Distribution GmbH

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LWI Electronics Inc

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Sunrise Surplus Inc.

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Holdelec - ElecDif-Pro

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PC Components Company LLC

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Bristol Electronics

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Corphita

USA . 3,916 parts In-Stock

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$15.462

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Parana Technologies

USA . 859 parts In-Stock

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$28.801

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$51.998

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DigiPath Technology Company

USA . 52 parts In-Stock

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$31.714

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$29.177

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ChromeModa Solutions

Germany . 2,235 parts In-Stock

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IDEA Electronic Components Group

UK . 699 parts In-Stock

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$30.743

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$29.125

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QUARKTWIN TECHNOLOGY LTD

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Glotronic Ltd.

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Microchip USA

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Northwest PG Solutions

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Supply Digital

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Native Components

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Kepictronics

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Overview

Enhance your electronic designs with the high-quality CD40109BF3A by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments delivers reliable and efficient bus driver & transceivers like no other. This versatile product is perfect for a wide range of applications, providing customers with exceptional value and performance. Trust in Texas Instruments to provide you with the best in electronics components for your projects.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

The ceramic, glass-sealed package body material provides durability and protection for the internal components of the bus driver and transceiver, ensuring reliable performance even in harsh environments.

Propagation Delay At Nominal Supply: 600 ns

With a low propagation delay, this bus driver and transceiver can quickly transmit signals, making it suitable for high-speed communication applications.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard 5V supply voltage, this product is compatible with many common electronic systems and can be easily integrated into existing designs.

Output Characteristics: 3-STATE

The 3-STATE output characteristics allow for flexible control of the output signal, providing options for driving buses and controlling multiple devices with a single transceiver.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this bus driver and transceiver can withstand elevated temperatures without compromising performance, making it suitable for industrial applications.

Technology: CMOS

Utilizing CMOS technology, this product offers low power consumption and high noise immunity, resulting in efficient operation and reliable signal transmission.

Terminal Form: THROUGH-HOLE

The through-hole terminal form allows for easy and secure mounting on a PCB, ensuring stable connections and facilitating assembly in electronic systems.

Technical Specifications

Bus Driver & Transceivers CD40109BF3A attributes and parameters. Explore more Bus Driver & Transceivers devices from Texas Instruments

Specs

Additional Features:

LOW TO HIGH VOLTAGE TRANSLATOR

Control Type:

ENABLE HIGH

Count Direction:

UNIDIRECTIONAL

Family:

4000/14000/40000

JESD-30 Code:

R-GDIP-T16

JESD-609 Code:

e0

Length:

19.05 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

6.8 Amp

No. of Bits:

4

No. of Functions:

1

No. of Ports:

2

No. of Terminals:

16

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output Characteristics:

3-STATE

Output Polarity:

TRUE

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

DIP

Package Shape:

Package Style (Meter):

IN-LINE

Packing Method:

TUBE

Maximum Power Supply Current (ICC):

.018 mA

Propagation Delay At Nominal Supply:

600 ns

Propagation Delay (tpd):

600 ns

Qualification:

Not Qualified

Maximum Seated Height:

5.08 mm

Maximum Supply Voltage (Vsup):

18 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Translation:

N/A

Width:

7.62 mm

Trade Compliance

CD40109BF3A Logic ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

NSN

5962-01-091-1966, 5962010911966, 5962-01-373-3168, 5962013733168, 5962-01-554-3126, 5962015543126

NIIN

010911966, 013733168, 015543126

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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