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CC2500RTKRG3

Texas Instruments

CC2500RTKRG3 by Texas Instruments

CC2500RTKRG3 by Texas Instruments is a Telecom IC with 20 terminals, operating at temperatures from -40 to 85°C. It has a supply voltage of 1.8/3.6V and uses CMOS technology. This chip carrier package is suitable for telecom circuits, featuring a very thin profile and nickel palladium gold finish for industrial applications.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,537 parts In-Stock

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Vyrian

USA . 3,138 parts In-Stock

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3,138

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Distributors (Availability)

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Northwest PG Solutions

USA . 134 parts In-Stock

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$2.937

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$2.937

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Parana Technologies

USA . 1,963 parts In-Stock

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$6.933

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$7.526

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DigiPath Technology Company

USA . 2,359 parts In-Stock

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$7.634

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$7.023

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ChromeModa Solutions

Germany . 6,374 parts In-Stock

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$7.790

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$6.388

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$7.790

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IDEA Electronic Components Group

UK . 2,330 parts In-Stock

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$7.790

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$7.011

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$7.790

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$7.011

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AZTECH Wire

Italy . 572 parts In-Stock

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$14.433

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One Stop Electronics

USA . 961 parts In-Stock

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$163.000

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A-Z Elektronik GmbH

Germany . 6,554 parts In-Stock

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Lixinc

USA . 4,645 parts In-Stock

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Alle Elektronik GmbH

Germany . 4,369 parts In-Stock

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Glotronic Ltd.

UK . 3,790 parts In-Stock

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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Corphita

USA . 828 parts In-Stock

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Native Components

USA . 362 parts In-Stock

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Kepictronics

USA . 60 parts In-Stock

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60

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Overview

Enhance your telecommunications projects with the CC2500RTKRG3 by Texas Instruments. Known for their high-quality products, Texas Instruments offers a reliable solution for various applications in the telecom industry. This IC package boasts a durable design and a wide temperature range, making it suitable for industrial use. Experience the seamless integration and exceptional performance this product provides, allowing you to achieve your project goals efficiently. Upgrade your systems with Texas Instruments and elevate your telecommunications experience today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic material provides durability and impact resistance, making this product suitable for long-term use in various environments.

Surface Mount: YES

Surface mount capability enables easy and efficient installation on circuit boards, saving time and effort during manufacturing.

Power Supplies (V): 1.8/3.6

Support for multiple power supply voltages allows flexibility in system design and compatibility with different power sources.

Maximum Operating Temperature: 85 °C

High maximum operating temperature ensures reliable performance even in demanding industrial environments with elevated temperatures.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, enhancing the efficiency and reliability of the telecom interface IC.

Technical Specifications

Other Function Telecom Interface ICs CC2500RTKRG3 attributes and parameters. Explore more Other Function Telecom Interface ICs devices from Texas Instruments

Specs

JESD-30 Code:

S-PQCC-N20

JESD-609 Code:

e4

Length:

4 mm

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

20

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LCC20,.16SQ,20

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Power Supplies (V):

1.8/3.6

Qualification:

Not Qualified

Maximum Seated Height:

.9 mm

Sub-Category:

Other Telecom ICs

Nominal Supply Voltage:

3 V

Surface Mount:

YES

Technology:

CMOS

Telecom IC Type:

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

4 mm

Trade Compliance

CC2500RTKRG3 Telecommunications trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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