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BQ27411DRZR-G1B

Texas Instruments

BQ27411DRZR-G1B by Texas Instruments

BQ27411DRZR-G1B by Texas Instruments is a Power Management IC with 12 terminals, operating b/w -40 to 85°C. It has a nominal voltage of 3.6V and a small outline package style. Ideal for industrial applications requiring power supply management circuits with adjustable threshold capabilities.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,067 parts In-Stock

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Vyrian

USA . 2,758 parts In-Stock

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2,758

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Ampacity Inc.

Singapore . 1,226 parts In-Stock

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$2.500

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$2.500

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One Stop Electronics

USA . 1,518 parts In-Stock

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$3.500

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1,518

$3.500

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Semicontronic

India . 1,187 parts In-Stock

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$6.500

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$6.338

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$6.305

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$6.500

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$6.305

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Native Components

USA . 696 parts In-Stock

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$8.837

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696

$8.837

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Northwest PG Solutions

USA . 804 parts In-Stock

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$9.721

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$8.749

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804

$9.721

$8.749

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AZTECH Wire

Italy . 880 parts In-Stock

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$14.123

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880

$14.123

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Parana Technologies

USA . 884 parts In-Stock

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$17.897

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$18.068

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884

$17.897

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$18.068

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DigiPath Technology Company

USA . 1,184 parts In-Stock

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$19.707

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$18.130

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$19.707

$18.130

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ChromeModa Solutions

Germany . 3,764 parts In-Stock

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$20.109

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$16.489

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3,764

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$16.489

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IDEA Electronic Components Group

UK . 2,264 parts In-Stock

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$20.109

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$19.104

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$18.098

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2,264

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$18.098

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Microchip USA

USA . 2,047 parts In-Stock

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Corphita

USA . 1,047 parts In-Stock

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Corohmni

South Africa . 124 parts In-Stock

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Overview

Elevate your power management game with the BQ27411DRZR-G1B by Texas Instruments. Known for their top-notch quality and reliability, Texas Instruments delivers innovative solutions for a wide range of applications. This Power Management IC offers customers unmatched value, benefits, and advantages, all in a compact package. Say goodbye to worrying about supply voltage or operating temperatures, as this IC is designed to handle it all with ease. Trust Texas Instruments to deliver the performance and efficiency you need for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protects the internal components from external elements, ensuring a longer lifespan for the product.

Surface Mount: YES

Surface mount technology allows for easy and efficient installation on circuit boards, saving time and effort during manufacturing.

Nominal Supply Voltage (Vsup): 3.6 V

This optimized supply voltage ensures stable and efficient power management within the specified range, improving overall performance.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, this IC can withstand harsh environmental conditions without compromising functionality.

Terminal Finish: NICKEL PALLADIUM GOLD

This finish provides excellent conductivity and corrosion resistance, ensuring reliable connections for the IC.

Width (mm): 2.5 mm

The small width of the package allows for compact and space-saving designs in electronic devices.

Minimum Supply Voltage (Vsup): 2.45 V

This low minimum supply voltage enables efficient power management even in low-power applications, extending the usability of the product.

Maximum Time At Peak Reflow Temperature (s): 30

The short reflow time at peak temperature helps prevent component damage during manufacturing processes, improving product reliability.

Temperature Grade: INDUSTRIAL

Designed for industrial applications, this IC can operate reliably in demanding environments, making it a suitable choice for rugged settings.

Moisture Sensitivity Level (MSL): 2

With MSL 2, the IC can withstand moderate exposure to moisture during storage and handling, reducing the risk of damage.

Technical Specifications

Power Management ICs BQ27411DRZR-G1B attributes and parameters. Explore more Power Management ICs devices from Texas Instruments

Specs

Adjustable Threshold:

YES

JESD-30 Code:

R-PDSO-N12

JESD-609 Code:

e4

Length:

4 mm

Moisture Sensitivity Level (MSL):

2

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

12

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Maximum Seated Height:

1 mm

Maximum Supply Voltage (Vsup):

4.5 V

Minimum Supply Voltage (Vsup):

2.45 V

Nominal Supply Voltage (Vsup):

3.6 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

NO LEAD

Terminal Pitch:

.4 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width (mm):

2.5 mm

Trade Compliance

BQ27411DRZR-G1B Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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