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AFE2124E/1KG4

Texas Instruments

AFE2124E/1KG4 by Texas Instruments

AFE2124E/1KG4 by Texas Instruments is a digital transmission interface IC with 48 terminals, operating at 3.3V nominal voltage and 1.168 Mbps data rate. It features CMOS technology, suitable for industrial temperature grade applications in telecom systems as a digital SLIC component.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 8,399 parts In-Stock

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Digiode

USA . 4,491 parts In-Stock

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Distributors (Availability)

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Native Components

USA . 760 parts In-Stock

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$1.264

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760

$1.264

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Northwest PG Solutions

USA . 271 parts In-Stock

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$1.390

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271

$1.390

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Parana Technologies

USA . 1,458 parts In-Stock

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$6.909

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$7.513

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$6.909

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DigiPath Technology Company

USA . 1,654 parts In-Stock

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$7.608

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$6.999

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$7.608

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ChromeModa Solutions

Germany . 6,766 parts In-Stock

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$7.763

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$6.366

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IDEA Electronic Components Group

UK . 2,080 parts In-Stock

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$7.763

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$6.987

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AZTECH Wire

Italy . 287 parts In-Stock

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$12.891

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Semicontronic

India . 766 parts In-Stock

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$758.000

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$739.050

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$735.260

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766

$758.000

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One Stop Electronics

USA . 218 parts In-Stock

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$828.000

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Corphita

USA . 4,671 parts In-Stock

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Authorized Procurement Solutions

USA . 3,500 parts In-Stock

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Microchip USA

USA . 356 parts In-Stock

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Corohmni

South Africa . 115 parts In-Stock

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Overview

Enhance your digital transmission interfaces with the AFE2124E/1KG4 by Texas Instruments. Known for their superior quality and innovative technology, Texas Instruments delivers cutting-edge solutions for a wide range of applications. This versatile product offers unmatched value, benefits, and advantages to customers seeking reliable and efficient digital communication solutions. Upgrade your systems today and experience the difference with the AFE2124E/1KG4.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material makes the product lightweight and durable, ideal for portable applications.

Surface Mount: YES

Being surface mountable makes the product easy to integrate onto circuit boards, saving space and facilitating automated assembly processes.

Power Supplies (V): 3.3/5,5

The compatibility with multiple power supply voltages (3.3V and 5.5V) increases flexibility in design and application options.

No. of Terminals: 48

With a high number of terminals, the product can support complex connections and functions, making it suitable for advanced digital transmission applications.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature of 85 °C ensures reliable performance even under challenging environmental conditions.

Technology: CMOS

The CMOS technology used in this product offers low power consumption and high noise immunity, making it energy-efficient and reliable for digital signal processing.

Data Rate: 1.168 Mbps

The high data rate capability of 1.168 Mbps enables fast and efficient digital transmission, suitable for demanding communication needs.

Technical Specifications

Digital Transmission Interfaces AFE2124E/1KG4 attributes and parameters. Explore more Digital Transmission Interfaces devices from Texas Instruments

Specs

Data Rate:

1.168 Mbps

JESD-30 Code:

R-PDSO-G48

Length:

15.875 mm

No. of Functions:

1

No. of Terminals:

48

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SSOP48,.4

Package Shape:

Package Style (Meter):

SMALL OUTLINE, SHRINK PITCH

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

3.3/5,5

Qualification:

Not Qualified

Maximum Seated Height:

2.79 mm

Sub-Category:

Other Telecom ICs

Nominal Supply Voltage:

3.3 V

Surface Mount:

YES

Technology:

CMOS

Telecom IC Type:

Temperature Grade:

Terminal Form:

Terminal Pitch:

.635 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

7.5 mm

Trade Compliance

AFE2124E/1KG4 Telecommunications trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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