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AFE2126E/500

Texas Instruments

AFE2126E/500 by Texas Instruments

AFE2126E/500 by Texas Instruments is a digital transmission interface IC with 48 terminals, operating at 1.168 Mbps data rate. It features a supply voltage of 5V, CMOS technology, and industrial temperature grade suitability. This telecom IC type is designed for digital SLIC applications in telecommunications systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 5,270 parts In-Stock

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Digiode

USA . 3,497 parts In-Stock

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AZTECH Wire

Italy . 574 parts In-Stock

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$11.373

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574

$11.373

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Parana Technologies

USA . 546 parts In-Stock

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$15.941

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$16.293

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546

$15.941

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ChromeModa Solutions

Germany . 6,301 parts In-Stock

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$17.911

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$14.687

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IDEA Electronic Components Group

UK . 1,986 parts In-Stock

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$17.911

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$17.015

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$16.120

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One Stop Electronics

USA . 1,738 parts In-Stock

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$34.000

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$34.000

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Corphita

USA . 4,243 parts In-Stock

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Northwest PG Solutions

USA . 1,972 parts In-Stock

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$3.489

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DigiPath Technology Company

USA . 1,555 parts In-Stock

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$16.149

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Native Components

USA . 232 parts In-Stock

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$3.453

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Overview

Upgrade your digital transmission interfaces with the AFE2126E/500 by Texas Instruments. Manufactured with top-quality materials and advanced technology, this product offers unparalleled performance and reliability. From telecom applications to industrial settings, this versatile device provides seamless connectivity and precise data transmission. Experience the value and benefits of Texas Instruments' expertise in every terminal position, ensuring maximum efficiency and ease of use. Elevate your systems with the AFE2126E/500 and unlock a world of possibilities in digital communication.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides durability and protection, making the product suitable for various environments.

Surface Mount: YES

Surface mount technology allows for easy and efficient assembly onto circuit boards, saving time and cost in production.

Package Shape: RECTANGULAR

Rectangular shape provides a compact design, allowing for efficient use of space on the circuit board.

Power Supplies (V): 3.3,5

Supporting multiple power supply options gives flexibility in design and compatibility with different systems.

No. of Terminals: 48

Having a high number of terminals allows for connectivity to various components and peripherals, enhancing functionality.

Maximum Operating Temperature: 85 °C

High operating temperature range ensures reliability and performance in a wide range of operating conditions.

Minimum Operating Temperature: -40 °C

Low operating temperature ensures that the product can function in extreme cold environments without issues.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, improving overall performance and efficiency.

Nominal Supply Voltage: 5 V

5V supply voltage is a common standard in many electronic systems, ensuring easy integration with existing setups.

Data Rate: 1.168 Mbps

High data rate enables fast and efficient data transmission, making the product suitable for high-speed communication applications.

Technical Specifications

Digital Transmission Interfaces AFE2126E/500 attributes and parameters. Explore more Digital Transmission Interfaces devices from Texas Instruments

Specs

Data Rate:

1.168 Mbps

JESD-30 Code:

R-PDSO-G48

Length:

15.875 mm

No. of Functions:

1

No. of Terminals:

48

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SSOP48,.4

Package Shape:

Package Style (Meter):

SMALL OUTLINE, SHRINK PITCH

Power Supplies (V):

3.3,5

Qualification:

Not Qualified

Maximum Seated Height:

2.794 mm

Sub-Category:

Other Telecom ICs

Nominal Supply Voltage:

5 V

Surface Mount:

YES

Technology:

CMOS

Telecom IC Type:

Temperature Grade:

Terminal Form:

Terminal Pitch:

.635 mm

Terminal Position:

DUAL

Width:

7.5 mm

Trade Compliance

AFE2126E/500 Telecommunications trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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