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AFE1103E/1KG4

Texas Instruments

AFE1103E/1KG4 by Texas Instruments

AFE1103E/1KG4 by Texas Instruments is a digital transmission interface IC with 48 terminals, operating at 1.168 Mbps data rate and 3.3V nominal voltage. It is designed for telecom applications as a CMOS technology-based digital SLIC, suitable for industrial temperature grades from -40 to 85°C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 9,716 parts In-Stock

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Digiode

USA . 1,529 parts In-Stock

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1,529

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Native Components

USA . 175 parts In-Stock

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$0.127

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$0.122

175

$0.127

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$0.122

Northwest PG Solutions

USA . 1,033 parts In-Stock

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$0.140

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$0.123

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$0.140

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$0.123

Parana Technologies

USA . 5 parts In-Stock

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$11.681

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$12.073

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5

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$12.073

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IDEA Electronic Components Group

UK . 1,309 parts In-Stock

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$13.125

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$12.469

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$11.812

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$11.812

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ChromeModa Solutions

Germany . 734 parts In-Stock

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$13.125

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$10.762

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734

$13.125

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AZTECH Wire

Italy . 564 parts In-Stock

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$15.258

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One Stop Electronics

USA . 519 parts In-Stock

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$410.000

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Authorized Procurement Solutions

USA . 3,500 parts In-Stock

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Corphita

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Microchip USA

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DigiPath Technology Company

USA . 230 parts In-Stock

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$11.834

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Overview

Enhance your digital transmission interfaces with the AFE1103E/1KG4 by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments delivers top-notch quality and reliability. This versatile product is perfect for a wide range of applications, offering exceptional value and benefits to customers. With its small outline package and dual terminal position, the AFE1103E/1KG4 provides ease of installation and superior performance. Upgrade your telecom systems with this cutting-edge technology and experience seamless digital communication like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, suitable for various applications.

Surface Mount: YES

Surface mount technology allows for easy and efficient installation on a PCB, saving space and reducing assembly time.

Package Shape: RECTANGULAR

The rectangular shape provides a standardized form factor for easy integration into existing designs and systems.

Power Supplies (V): 3.3,5

The product is versatile and can operate at different voltage levels, increasing compatibility with different systems.

No. of Terminals: 48

Having a high number of terminals allows for more connections and interfaces, enabling complex data transmission requirements.

Package Style (Meter): SMALL OUTLINE, SHRINK PITCH

The small outline and shrink pitch package style saves space on the PCB and improves overall system efficiency.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature ensures reliable performance even in harsh environments or industrial settings.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature allows the product to function in extreme cold conditions without any issues.

Terminal Position: DUAL

Dual terminal position design offers redundancy and improves signal integrity, reducing the risk of data loss or transmission errors.

Maximum Seated Height: 2.79 mm

The low seated height makes the product suitable for compact and slim devices where space is limited.

Width: 7.5 mm

The narrow width allows for high-density PCB designs, enabling more functionality in a smaller footprint.

Length: 15.875 mm

The compact length provides flexibility in placement on the PCB and ensures efficient use of space within the system.

Temperature Grade: INDUSTRIAL

The industrial temperature grade guarantees reliable operation in a wide range of temperature conditions typically found in industrial environments.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the product efficient and reliable for digital transmission.

Terminal Form: GULL WING

The gull wing terminal form provides mechanical strength and ease of soldering, ensuring secure connections and long-term reliability.

Telecom IC Type: DIGITAL SLIC

The use of digital SLIC technology enables high-quality signal processing and transmission for telecom applications, ensuring clear and reliable communication.

Nominal Supply Voltage: 3.3 V

The nominal supply voltage of 3.3V ensures compatibility with various systems and reduces the risk of overvoltage issues.

Terminal Pitch: 0.635 mm

The small terminal pitch allows for high-density interconnects, enabling more connections in a limited space and improving signal integrity.

Data Rate: 1.168 Mbps

The high data rate of 1.168 Mbps enables fast and efficient data transmission, suitable for demanding applications and high-speed communication.

Technical Specifications

Digital Transmission Interfaces AFE1103E/1KG4 attributes and parameters. Explore more Digital Transmission Interfaces devices from Texas Instruments

Specs

Data Rate:

1.168 Mbps

JESD-30 Code:

R-PDSO-G48

Length:

15.875 mm

No. of Functions:

1

No. of Terminals:

48

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SSOP48,.4

Package Shape:

Package Style (Meter):

SMALL OUTLINE, SHRINK PITCH

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

3.3,5

Qualification:

Not Qualified

Maximum Seated Height:

2.79 mm

Sub-Category:

Other Telecom ICs

Nominal Supply Voltage:

3.3 V

Surface Mount:

YES

Technology:

CMOS

Telecom IC Type:

Temperature Grade:

Terminal Form:

Terminal Pitch:

.635 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

7.5 mm

Trade Compliance

AFE1103E/1KG4 Telecommunications trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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