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74LVC1GX04DCKTG4

Texas Instruments

74LVC1GX04DCKTG4 by Texas Instruments

74LVC1GX04DCKTG4 by Texas Instruments is a CMOS logic gate with a propagation delay of 5 ns and load capacitance of 50 pF. It operates at a nominal voltage of 1.8V, making it suitable for automotive applications due to its small outline package style and wide temperature range from -40°C to 125°C.

Median Price

$1.742

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Texas Instruments

USA . 72,500 parts In-Stock

1+ parts

$1.013

100+ parts

$0.779

1k+ parts

$0.410

10k+ parts

-

72,500

$1.013

$0.779

$0.410

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Mouser Electronics

USA . 490 parts In-Stock

1+ parts

$2.470

100+ parts

$1.230

1k+ parts

$0.725

10k+ parts

$0.671

490

$2.470

$1.230

$0.725

$0.671

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,743 parts In-Stock

1+ parts

$0.962

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-

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4,743

$0.962

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Vyrian

USA . 5,613 parts In-Stock

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5,613

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Distributors (Availability)

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Corphita

USA . 880 parts In-Stock

1+ parts

$0.912

100+ parts

-

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-

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880

$0.912

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-

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Native Components

USA . 91 parts In-Stock

1+ parts

$16.680

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-

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91

$16.680

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Northwest PG Solutions

USA . 1,638 parts In-Stock

1+ parts

$18.348

100+ parts

$16.513

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-

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1,638

$18.348

$16.513

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Parana Technologies

USA . 31 parts In-Stock

1+ parts

$30.139

100+ parts

-

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$67.500

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31

$30.139

-

$67.500

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DigiPath Technology Company

USA . 648 parts In-Stock

1+ parts

$33.187

100+ parts

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648

$33.187

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ChromeModa Solutions

Germany . 6,001 parts In-Stock

1+ parts

$33.864

100+ parts

$27.768

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6,001

$33.864

$27.768

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IDEA Electronic Components Group

UK . 2,093 parts In-Stock

1+ parts

$33.864

100+ parts

$32.171

1k+ parts

$30.478

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2,093

$33.864

$32.171

$30.478

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Microchip USA

USA . 1,904 parts In-Stock

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1,904

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Overview

Upgrade your logic gates to the next level with the 74LVC1GX04DCKTG4 by Texas Instruments. Crafted with precision and reliability, this small outline package offers fast propagation delay, low power consumption, and a wide temperature range making it ideal for automotive applications. Trust in Texas Instruments' reputation for quality and innovation, and experience the value and performance this product brings to your designs.

Feature Benefit Bullets

Propagation Delay At Nominal Supply: 5 ns

Low propagation delay ensures fast response time, making this logic gate suitable for high-speed applications.

Nominal Supply Voltage / Vsup (V): 1.8

Operates at a low supply voltage, making it energy efficient and compatible with low-power applications.

Maximum Operating Temperature: 125 °C

Can withstand high operating temperatures, making it suitable for various environmental conditions.

Technology: CMOS

Utilizes CMOS technology which provides high noise immunity, low power consumption, and high speed operation.

Technical Specifications

Logic Gates 74LVC1GX04DCKTG4 attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Family:

LVC/LCX/Z

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e4

Length:

2 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

32 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

1

No. of Terminals:

6

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP6,.08

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Maximum Power Supply Current (ICC):

.01 mA

Propagation Delay At Nominal Supply:

5 ns

Propagation Delay (tpd):

18 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

1.1 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

1.25 mm

Trade Compliance

74LVC1GX04DCKTG4 Logic ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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