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74AHCT1G08DBVTE4

Texas Instruments

74AHCT1G08DBVTE4 by Texas Instruments

74AHCT1G08DBVTE4 by Texas Instruments is a CMOS logic gate with 2 inputs and 3-STATE output. It operates at a supply voltage of 5V, has a propagation delay of 9ns, and can handle load capacitance of 50pF. This small outline package is ideal for automotive applications due to its low profile design and dual terminal position.

Median Price

$0.437

Lifecycle Status

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3

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1k+

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Mouser Electronics

USA . 573 parts In-Stock

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$0.437

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$0.373

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Vyrian

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Digiode

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Parana Technologies

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DigiPath Technology Company

USA . 37 parts In-Stock

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$26.958

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ChromeModa Solutions

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IDEA Electronic Components Group

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$26.910

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Component Stockers USA

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Overview

Elevate your electronics projects with the Texas Instruments 74AHCT1G08DBVTE4 logic gate. Crafted by a renowned manufacturer, this high-quality component offers impeccable performance and reliability. Ideal for a wide range of applications, including automotive systems, consumer electronics, and industrial equipment, this logic gate ensures seamless operation and precision. Experience the value and benefits of this product, with its low profile design, fast propagation delay, and 3-state output characteristics. Upgrade your projects with the Texas Instruments 74AHCT1G08DBVTE4 and enjoy unmatched efficiency and functionality.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material for easy handling and protection of internal components.

Propagation Delay At Nominal Supply: 9 ns

Provides fast response time for processing signals, ensuring efficient operation.

Surface Mount: YES

Easy to install and suitable for compact circuit designs.

No. of Inputs: 2

Allows for multiple input signals to be processed simultaneously.

Nominal Supply Voltage / Vsup (V): 5

Standard voltage supply for compatibility with a wide range of applications.

Load Capacitance (CL): 50 pF

Designed to handle the specified capacitance, ensuring stable performance.

Power Supplies (V): 5

Optimized for operation at 5V, reducing the risk of voltage compatibility issues.

No. of Terminals: 5

Simplified connection setup with a small number of terminals.

Maximum I (ol): 8 Amp

Capable of handling high output current, suitable for demanding applications.

Output Characteristics: 3-STATE

Provides an additional logic state for flexible output control.

Minimum Operating Temperature: -40 °C

Wide temperature range for reliable operation in various environments.

Temperature Grade: AUTOMOTIVE

Suitable for automotive applications with high temperature requirements.

Technology: CMOS

Uses CMOS technology for low power consumption and reliable performance.

Technical Specifications

Logic Gates 74AHCT1G08DBVTE4 attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Family:

AHCT/VHCT/VT

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e4

Length:

2.9 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

8 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

2

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP5/6,.11,37

Package Shape:

Package Style (Meter):

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

5

Maximum Power Supply Current (ICC):

.01 mA

Propagation Delay At Nominal Supply:

9 ns

Propagation Delay (tpd):

9 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

1.45 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

1.6 mm

Trade Compliance

74AHCT1G08DBVTE4 Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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