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74AHCT1G00DBVTG4

Texas Instruments

74AHCT1G00DBVTG4 by Texas Instruments

74AHCT1G00DBVTG4 by Texas Instruments is a logic gate with 2 inputs, 9 ns propagation delay at 5V. It has a small outline package and operates in automotive temperature grades. Ideal for applications requiring fast signal processing in compact spaces.

Median Price

$1.125

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Bristol Electronics

USA . 1,160 parts In-Stock

1+ parts

$1.125

100+ parts

$0.416

1k+ parts

$0.292

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$1.125

$0.416

$0.292

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Vyrian

USA . 8,847 parts In-Stock

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Digiode

USA . 3,894 parts In-Stock

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Microfarads

USA . 1,119 parts In-Stock

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1,119

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Distributors (Availability)

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Native Components

USA . 691 parts In-Stock

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$1.691

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-

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691

$1.691

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Northwest PG Solutions

USA . 1,371 parts In-Stock

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$1.860

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One Stop Electronics

USA . 1,075 parts In-Stock

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$6.000

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$6.000

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AZTECH Wire

Italy . 519 parts In-Stock

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$11.827

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519

$11.827

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Parana Technologies

USA . 1,539 parts In-Stock

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$15.568

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$15.941

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1,539

$15.568

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$15.941

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DigiPath Technology Company

USA . 1,254 parts In-Stock

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$17.142

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$15.771

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1,254

$17.142

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ChromeModa Solutions

Germany . 6,087 parts In-Stock

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$17.492

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$14.343

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IDEA Electronic Components Group

UK . 364 parts In-Stock

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$17.492

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$16.617

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$15.743

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364

$17.492

$16.617

$15.743

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Modulus Dynamics

Lithuania . 60 parts In-Stock

1+ parts

$29.942

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$29.942

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$29.942

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60

$29.942

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Microchip USA

USA . 2,651 parts In-Stock

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Corphita

USA . 1,045 parts In-Stock

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Overview

Discover the versatile 74AHCT1G00DBVTG4 by Texas Instruments, a high-quality logic gate that offers reliable performance and precision engineering. With a small outline package and low profile design, this product is perfect for a wide range of applications in automotive and industrial settings. Benefit from quick propagation delay, dual terminals, and a wide operating temperature range. Trust Texas Instruments for cutting-edge technology and superior products that deliver value and efficiency to every customer. Upgrade your systems with the 74AHCT1G00DBVTG4 and experience the difference today!

Feature Benefit Bullets

Propagation Delay At Nominal Supply: 9 ns

Low propagation delay ensures fast response times and efficient operation.

No. of Inputs: 2

Having 2 inputs allows for more complex logic operations to be performed.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard voltage level of 5V makes it compatible with a wide range of systems.

Maximum Operating Temperature: 125 °C

Can withstand high temperatures, suitable for use in automotive and industrial applications.

Technology: CMOS

CMOS technology provides low power consumption and high noise immunity, making it an efficient choice.

Technical Specifications

Logic Gates 74AHCT1G00DBVTG4 attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Family:

AHCT/VHCT/VT

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e4

Length:

2.9 mm

Load Capacitance (CL):

15 pF

Logic IC Type:

Maximum I (ol):

8 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

2

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP5/6,.11,37

Package Shape:

Package Style (Meter):

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

5

Maximum Power Supply Current (ICC):

.01 mA

Propagation Delay At Nominal Supply:

9 ns

Propagation Delay (tpd):

9 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

1.45 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

1.6 mm

Trade Compliance

74AHCT1G00DBVTG4 Logic ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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