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2N388A

Texas Instruments

2N388A by Texas Instruments

2N388A by Texas Instruments is a NPN BJT transistor with max power dissipation of 0.15W and max collector-emitter voltage of 40V. Ideal for switching applications, it has a min DC current gain of 30 and operates at temperatures up to 100°C.

Median Price

$15.000

Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

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TEDSS.com

USA . 392 parts In-Stock

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$12.000

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$10.000

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Ace Electronics

USA . 75 parts In-Stock

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$15.000

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Bristol Electronics

USA . 6 parts In-Stock

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$15.000

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Vyrian

USA . 9,786 parts In-Stock

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Digiode

USA . 579 parts In-Stock

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Electro Mavin

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Resion

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150

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ECAB

Sweden . 12 parts In-Stock

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First Choice Components Inc.

USA . 12 parts In-Stock

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Sunrise Surplus Inc.

USA . 10 parts In-Stock

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Electronic Expediters

USA . 7 parts In-Stock

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Corel Iberica Componentes, S.L.

Spain . 5 parts In-Stock

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EMSNET

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Prism Electronics

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LittleDiode

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Mil-Aero Solutions, Inc.

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Distributors (Availability)

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Parana Technologies

USA . 251 parts In-Stock

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$1.265

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$2.031

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$1.265

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$2.031

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DigiPath Technology Company

USA . 252 parts In-Stock

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$1.393

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$1.281

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252

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ChromeModa Solutions

Germany . 3,354 parts In-Stock

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$1.421

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$1.165

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IDEA Electronic Components Group

UK . 1,190 parts In-Stock

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$1.421

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$1.279

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One Stop Electronics

USA . 575 parts In-Stock

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$10.050

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575

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AZTECH Wire

Italy . 640 parts In-Stock

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$13.646

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Authorized Procurement Solutions

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Northwest PG Solutions

USA . 1,419 parts In-Stock

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Native Components

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Corphita

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Kepictronics

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Assy Fe

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RTC Component Inc.

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Overview

Elevate your electronic projects with the Texas Instruments 2N388A small signal bipolar junction transistor. Known for their high-quality components, Texas Instruments delivers unmatched performance and reliability in every product. Ideal for switching applications, this NPN transistor offers a maximum collector-emitter voltage of 40V and a maximum collector current of 0.2A, making it perfect for a wide range of projects. Experience the value and benefits of using the 2N388A in your designs today!

Feature Benefit Bullets

Package Body Material: METAL

Metal package provides good thermal conductivity and durability, making it suitable for high-power applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in digital and analog circuits, providing versatility.

Configuration: SINGLE

Single configuration simplifies circuit design and installation.

Transistor Application: SWITCHING

Designed for switching applications, offering fast switching speeds.

Package Shape: ROUND

Round shape helps in easy mounting and installation.

Terminal Form: WIRE

Wire terminal form provides easy connection and soldering.

Maximum Power Dissipation (Abs): 0.15 W

With a low power dissipation, it helps in minimizing heat generation.

Package Style (Meter): CYLINDRICAL

Cylindrical package style allows for compact placement in circuits.

Minimum DC Current Gain (hFE): 30

A higher minimum DC current gain ensures amplification efficiency.

Maximum Operating Temperature: 100 °C

Can operate in a wide range of temperatures, providing versatility.

Maximum Collector-Emitter Voltage: 40 V

Can handle higher voltages in circuit applications.

Transistor Element Material: GERMANIUM

Germanium material offers low noise performance in low-power applications.

Maximum Collector Current (IC): 0.2 A

Allows for high collector current ratings in various circuit applications.

Terminal Position: BOTTOM

Bottom terminal position offers easy PCB mounting and soldering.

Nominal Transition Frequency (fT): 5 MHz

High transition frequency allows for efficient switching at high frequencies.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2N388A attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Texas Instruments

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

30

JEDEC-95 Code:

TO-5

JESD-30 Code:

O-MBCY-W3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

100 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

GERMANIUM

Nominal Transition Frequency (fT):

Trade Compliance

2N388A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-837-1757, 5961008371757

NIIN

008371757

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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