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2N3808

Texas Instruments

2N3808 by Texas Instruments

2N3808 by Texas Instruments is a PNP BJT with 2 elements, hFE of 150, and max. power dissipation of 0.5W. Ideal for amplifier applications due to its 60V max. collector-emitter voltage and 100MHz transition frequency. Package style is cylindrical with isolated case connection.

Median Price

$18.743

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

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TEDSS.com

USA . 23 parts In-Stock

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$13.990

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23

$13.990

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Bristol Electronics

USA . 350 parts In-Stock

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$23.496

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$20.785

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$19.267

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350

$23.496

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$19.267

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Vyrian

USA . 7,149 parts In-Stock

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7,149

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Digiode

USA . 3,031 parts In-Stock

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Anansix

USA . 1,681 parts In-Stock

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1,681

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PUI

USA . 279 parts In-Stock

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279

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R&J Components

USA . 261 parts In-Stock

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ECAB

Sweden . 70 parts In-Stock

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DigiKey Marketplace

USA . 50 parts In-Stock

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MISTER SPROCKETS

USA . 29 parts In-Stock

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Electronic Expediters

USA . 6 parts In-Stock

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DF Sales Co.

USA . 3 parts In-Stock

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DF Sales Co.

USA . 3 parts In-Stock

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Electro Mavin

USA . 1 parts In-Stock

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Distributors (Availability)

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Parana Technologies

USA . 2,218 parts In-Stock

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$0.975

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$1.869

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2,218

$0.975

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$1.869

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DigiPath Technology Company

USA . 1,330 parts In-Stock

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$1.074

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$0.988

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1,330

$1.074

$0.988

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ChromeModa Solutions

Germany . 5,006 parts In-Stock

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$1.096

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$0.899

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5,006

$1.096

$0.899

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IDEA Electronic Components Group

UK . 348 parts In-Stock

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$1.096

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$0.986

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348

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AZTECH Wire

Italy . 631 parts In-Stock

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$6.795

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One Stop Electronics

USA . 1,312 parts In-Stock

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$14.050

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Microchip USA

USA . 9,417 parts In-Stock

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$29.868

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Corphita

USA . 4,708 parts In-Stock

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Glotronic Ltd.

UK . 2,780 parts In-Stock

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Supply Digital

USA . 2,679 parts In-Stock

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2,679

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Northwest PG Solutions

USA . 2,181 parts In-Stock

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Native Components

USA . 882 parts In-Stock

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882

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Overview

Discover the power of the 2N3808 by Texas Instruments, a high-quality Small Signal Bipolar Junction Transistor perfect for amplifiers. With its durable metal package body and PNP configuration, this transistor offers exceptional performance and reliability. Whether you're designing audio equipment or signal processing devices, the 2N3808 provides unmatched value and efficiency. Trust Texas Instruments for cutting-edge technology that meets all your electronic needs. Elevate your projects with the 2N3808 and experience superior results like never before.

Feature Benefit Bullets

Package Body Material: METAL

The metal package body provides durability and efficient heat dissipation, ensuring a longer lifespan for the transistor.

Polarity or Channel Type: PNP

The PNP polarity allows for easy integration into circuits and enables the transistor to work effectively in amplifier applications.

Configuration: SEPARATE, 2 ELEMENTS

The separate configuration with 2 elements provides flexibility in circuit design and allows for more precise control over amplifier performance.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, this transistor ensures reliable amplification of signals with minimal distortion.

Maximum Power Dissipation (Abs): 0.5 W

The high maximum power dissipation capability of 0.5 W allows the transistor to handle higher power levels without overheating, ensuring reliable operation.

Maximum Collector-Emitter Voltage: 60 V

With a maximum collector-emitter voltage of 60 V, this transistor can withstand higher voltage levels in amplifier circuits without breakdown.

Minimum DC Current Gain (hFE): 150

The high minimum DC current gain of 150 ensures stable and consistent amplification performance, making it ideal for amplifier applications.

Nominal Transition Frequency (fT): 100 MHz

With a high nominal transition frequency of 100 MHz, this transistor is capable of amplifying higher frequency signals accurately, making it suitable for a wide range of applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2N3808 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Texas Instruments

Specs

Additional Features:

LOW NOISE

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

150

JEDEC-95 Code:

TO-78

JESD-30 Code:

O-MBCY-W6

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

175 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N3808 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-840-1313, 5961008401313

NIIN

008401313

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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