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2N2994

Texas Instruments

2N2994 by Texas Instruments

2N2994 by Texas Instruments is a NPN BJT with 15W power dissipation, 100V max collector-emitter voltage, and 50MHz fT. Ideal for applications requiring high power handling such as power supplies or amplifiers due to its single configuration and wire terminal form.

Median Price

$17.105

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

American Microsemiconductor Inc.

USA . 147 parts In-Stock

1+ parts

$14.210

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147

$14.210

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Ace Electronics

USA . 16 parts In-Stock

1+ parts

$20.000

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16

$20.000

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Vyrian

USA . 5,405 parts In-Stock

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5,405

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Digiode

USA . 1,850 parts In-Stock

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1,850

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Corel Iberica Componentes, S.L.

Spain . 40 parts In-Stock

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40

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Electronic Expediters

USA . 9 parts In-Stock

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9

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Manoshevitz Elec. Sales

Israel . 3 parts In-Stock

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3

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 2,283 parts In-Stock

1+ parts

$0.818

100+ parts

-

1k+ parts

$1.789

10k+ parts

-

2,283

$0.818

-

$1.789

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DigiPath Technology Company

USA . 624 parts In-Stock

1+ parts

$0.901

100+ parts

$0.829

1k+ parts

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624

$0.901

$0.829

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ChromeModa Solutions

Germany . 6,668 parts In-Stock

1+ parts

$0.919

100+ parts

$0.754

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6,668

$0.919

$0.754

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IDEA Electronic Components Group

UK . 317 parts In-Stock

1+ parts

$0.919

100+ parts

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1k+ parts

$0.827

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317

$0.919

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$0.827

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AZTECH Wire

Italy . 630 parts In-Stock

1+ parts

$6.664

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630

$6.664

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One Stop Electronics

USA . 240 parts In-Stock

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$16.050

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240

$16.050

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Component Stockers USA

USA . 80 parts In-Stock

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$445.590

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80

$445.590

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QUARKTWIN TECHNOLOGY LTD

USA . 22,497 parts In-Stock

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22,497

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Microchip USA

USA . 10,753 parts In-Stock

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10,753

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Corphita

USA . 4,704 parts In-Stock

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4,704

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Glotronic Ltd.

UK . 2,780 parts In-Stock

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2,780

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Northwest PG Solutions

USA . 284 parts In-Stock

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284

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Native Components

USA . 92 parts In-Stock

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92

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Assy Fe

Spain . 40 parts In-Stock

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40

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Overview

Elevate your power electronics projects with the 2N2994 by Texas Instruments. As a trusted manufacturer in the industry, Texas Instruments delivers top-notch quality and reliability in their Power Bipolar Junction Transistors. The 2N2994 is perfect for applications requiring high power dissipation and low DC current gain, making it ideal for a wide range of projects. With its NPN polarity and single configuration, this transistor offers exceptional performance and value to customers looking for a durable and efficient solution. Choose Texas Instruments for your next project and experience the difference in quality and performance.

Feature Benefit Bullets

Package Body Material: METAL

Metal package provides durability and better heat dissipation, making the transistor suitable for high-power applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, providing versatility in various electronic applications.

Maximum Power Dissipation (Abs): 15 W

With a high power dissipation rating, this transistor can handle high power levels without overheating, ensuring reliability in operation.

Nominal Transition Frequency (fT): 50 MHz

The high frequency response of this transistor allows for fast switching speeds and high-frequency amplification, making it suitable for RF applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N2994 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Texas Instruments

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

100 V

Configuration:

Minimum DC Current Gain (hFE):

40

JESD-30 Code:

O-MUPM-W3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

200 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

POST/STUD MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

UPPER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N2994 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-997-1319, 5961009971319, 5961-14-332-0099, 5961143320099

NIIN

009971319, 143320099

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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