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2N2992

Texas Instruments

2N2992 by Texas Instruments

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 1 A;

Median Price

$15.060

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

American Microsemiconductor Inc.

USA . 45 parts In-Stock

1+ parts

$10.120

100+ parts

-

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45

$10.120

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-

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Ace Electronics

USA . 17 parts In-Stock

1+ parts

$20.000

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-

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17

$20.000

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Vyrian

USA . 4,788 parts In-Stock

1+ parts

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4,788

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Digiode

USA . 4,468 parts In-Stock

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4,468

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Electronic Expediters

USA . 26 parts In-Stock

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26

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 2,259 parts In-Stock

1+ parts

$0.932

100+ parts

-

1k+ parts

$1.844

10k+ parts

-

2,259

$0.932

-

$1.844

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DigiPath Technology Company

USA . 650 parts In-Stock

1+ parts

$1.026

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-

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650

$1.026

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ChromeModa Solutions

Germany . 3,688 parts In-Stock

1+ parts

$1.047

100+ parts

$0.859

1k+ parts

-

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3,688

$1.047

$0.859

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IDEA Electronic Components Group

UK . 382 parts In-Stock

1+ parts

$1.047

100+ parts

-

1k+ parts

$0.942

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382

$1.047

-

$0.942

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AZTECH Wire

Italy . 613 parts In-Stock

1+ parts

$13.164

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-

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613

$13.164

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One Stop Electronics

USA . 1,555 parts In-Stock

1+ parts

$32.050

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1,555

$32.050

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QUARKTWIN TECHNOLOGY LTD

USA . 18,839 parts In-Stock

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18,839

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Microchip USA

USA . 5,922 parts In-Stock

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5,922

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CPlus Electronics

USA . 4,000 parts In-Stock

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4,000

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Corphita

USA . 3,111 parts In-Stock

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3,111

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Native Components

USA . 287 parts In-Stock

1+ parts

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$4.617

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287

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$4.617

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Northwest PG Solutions

USA . 282 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

$4.665

10k+ parts

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282

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$4.665

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Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N2992 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Texas Instruments

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

100 V

Configuration:

Minimum DC Current Gain (hFE):

20

JESD-30 Code:

O-MUPM-W3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

200 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

POST/STUD MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

2 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

UPPER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N2992 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-21-861-0719, 5961218610719

NIIN

218610719

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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