Loading...

2N2991

Texas Instruments

2N2991 by Texas Instruments

2N2991 by Texas Instruments is a NPN BJT with 80V VCE, 1A IC, and 50MHz fT. Ideal for power applications, it has a max power dissipation of 2W and operates up to 200°C. Its single configuration in round package suits post/stud mount setups.

Median Price

$13.660

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

American Microsemiconductor Inc.

USA . 42 parts In-Stock

1+ parts

$13.660

100+ parts

-

1k+ parts

-

10k+ parts

-

42

$13.660

-

-

-

Vyrian

USA . 5,053 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,053

-

-

-

-

Digiode

USA . 237 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

237

-

-

-

-

Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 15 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

15

-

-

-

-

ECAB

Sweden . 10 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

10

-

-

-

-

Electronic Expediters

USA . 5 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5

-

-

-

-

MISTER SPROCKETS

USA . 4 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 471 parts In-Stock

1+ parts

$1.567

100+ parts

-

1k+ parts

$2.209

10k+ parts

-

471

$1.567

-

$2.209

-

DigiPath Technology Company

USA . 2,227 parts In-Stock

1+ parts

$1.726

100+ parts

$1.588

1k+ parts

-

10k+ parts

-

2,227

$1.726

$1.588

-

-

ChromeModa Solutions

Germany . 3,126 parts In-Stock

1+ parts

$1.761

100+ parts

$1.444

1k+ parts

-

10k+ parts

-

3,126

$1.761

$1.444

-

-

IDEA Electronic Components Group

UK . 1,496 parts In-Stock

1+ parts

$1.761

100+ parts

-

1k+ parts

$1.585

10k+ parts

-

1,496

$1.761

-

$1.585

-

AZTECH Wire

Italy . 532 parts In-Stock

1+ parts

$9.159

100+ parts

-

1k+ parts

-

10k+ parts

-

532

$9.159

-

-

-

Native Components

USA . 16 parts In-Stock

1+ parts

$14.121

100+ parts

-

1k+ parts

-

10k+ parts

-

16

$14.121

-

-

-

Northwest PG Solutions

USA . 823 parts In-Stock

1+ parts

$15.533

100+ parts

$13.979

1k+ parts

-

10k+ parts

-

823

$15.533

$13.979

-

-

One Stop Electronics

USA . 1,254 parts In-Stock

1+ parts

$35.050

100+ parts

-

1k+ parts

-

10k+ parts

-

1,254

$35.050

-

-

-

Microchip USA

USA . 6,413 parts In-Stock

1+ parts

$63.618

100+ parts

-

1k+ parts

-

10k+ parts

-

6,413

$63.618

-

-

-

Corphita

USA . 2,405 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,405

-

-

-

-

Overview

Unleash the power of innovation with the 2N2991 by Texas Instruments. As a leader in electronic components, Texas Instruments ensures top-notch quality and reliability in every product they offer. The 2N2991 falls under the category of Power Bipolar Junction Transistors, making it ideal for various applications that require efficient power management. With a maximum power dissipation of 2W and a maximum collector-emitter voltage of 80V, this NPN transistor delivers outstanding performance. Trust Texas Instruments to provide you with cutting-edge technology that will take your projects to the next level.

Feature Benefit Bullets

Package Body Material: METAL

Metal package body provides better thermal conductivity and heat dissipation, ensuring the transistor operates at optimal temperatures for improved performance and reliability.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications, making this product versatile for various electronic circuits.

Configuration: SINGLE

Single configuration simplifies circuit design and makes the transistor easy to integrate into different electronic systems.

Package Shape: ROUND

Round package shape allows for easy mounting and placement in circuits or on circuit boards, saving space and improving layout flexibility.

Maximum Power Dissipation (Abs): 2 W

With a high maximum power dissipation, this transistor can handle higher power levels without overheating, ensuring long-term reliability in demanding applications.

Minimum DC Current Gain (hFE): 20

A minimum DC current gain of 20 indicates good amplification capabilities, making this transistor suitable for applications requiring signal amplification.

Maximum Operating Temperature: 200 °C

With a high maximum operating temperature, this transistor can withstand elevated temperatures without compromising performance, suitable for industrial or high-temperature environments.

Maximum Collector-Emitter Voltage: 80 V

High maximum collector-emitter voltage rating allows the transistor to handle higher voltages in circuits, increasing its versatility and application range.

Transistor Element Material: SILICON

Silicon-based transistors offer high performance, reliability, and efficiency, making this product a durable and efficient choice for electronic applications.

Maximum Collector Current (IC): 1 A

With a maximum collector current of 1 A, this transistor can handle higher current levels, making it suitable for power amplification and switching applications.

Nominal Transition Frequency (fT): 50 MHz

High nominal transition frequency allows the transistor to operate at higher frequencies, making it ideal for high-speed switching and RF applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N2991 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Texas Instruments

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

20

JESD-30 Code:

O-MUPM-W3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

200 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

POST/STUD MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

2 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

UPPER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N2991 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

New products
from Texas Instruments 7

Similar products 20