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2N2993

Texas Instruments

2N2993 by Texas Instruments

2N2993 by Texas Instruments is a NPN BJT with 80V VCEO, 1A IC, and 50MHz fT. Ideal for power applications due to its 2W Ptot and SILICON material. Commonly used in circuits requiring high DC current gain.

Median Price

$16.010

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (In-Stock)

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American Microsemiconductor Inc.

USA . 1 parts In-Stock

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$12.020

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Ace Electronics

USA . 2 parts In-Stock

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$20.000

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Vyrian

USA . 8,336 parts In-Stock

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Digiode

USA . 2,707 parts In-Stock

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Connector Distribution Corp

USA . 27 parts In-Stock

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Right Parts Inc.

USA . 27 parts In-Stock

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MISTER SPROCKETS

USA . 19 parts In-Stock

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Distributors (Availability)

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Parana Technologies

USA . 654 parts In-Stock

1+ parts

$0.538

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$1.646

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654

$0.538

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$1.646

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DigiPath Technology Company

USA . 125 parts In-Stock

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$0.593

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$0.545

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$0.593

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ChromeModa Solutions

Germany . 2,849 parts In-Stock

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$0.605

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$0.496

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$0.605

$0.496

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IDEA Electronic Components Group

UK . 826 parts In-Stock

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$0.605

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$0.544

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$0.605

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AZTECH Wire

Italy . 362 parts In-Stock

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$9.398

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Native Components

USA . 777 parts In-Stock

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$17.939

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Northwest PG Solutions

USA . 468 parts In-Stock

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$19.733

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$17.760

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One Stop Electronics

USA . 1,301 parts In-Stock

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$22.050

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Microchip USA

USA . 8,000 parts In-Stock

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Corphita

USA . 4,736 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 3,118 parts In-Stock

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Overview

Upgrade your power systems with the 2N2993 by Texas Instruments, a top-quality Power Bipolar Junction Transistor designed for superior performance and reliability. Manufactured by the trusted brand Texas Instruments, this NPN transistor offers a single configuration in a sturdy metal package, making it ideal for a wide range of applications. With a maximum power dissipation of 2W and a maximum collector-emitter voltage of 80V, this transistor provides exceptional value and efficiency for your electronic projects. Trust Texas Instruments and elevate your systems with the 2N2993.

Feature Benefit Bullets

Package Body Material: METAL

Metal package body provides durability and protection for the transistor, making it suitable for various applications including high power and high voltage circuits.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications, offering high efficiency and lower distortion.

Configuration: SINGLE

Single configuration simplifies circuit design and implementation, making it easier to integrate into different electronic systems.

Package Shape: ROUND

Round package shape allows for easy mounting and handling, making the transistor suitable for applications where space is limited.

Maximum Power Dissipation (Abs): 2 W

With a maximum power dissipation of 2W, this transistor can handle high power levels without overheating, ensuring reliable performance in demanding conditions.

Minimum DC Current Gain (hFE): 40

A minimum DC current gain of 40 indicates good amplification capabilities, allowing for effective signal amplification in various electronic circuits.

Maximum Operating Temperature: 200 °C

High maximum operating temperature of 200°C enables the transistor to operate efficiently in elevated temperature environments without degradation in performance.

Maximum Collector-Emitter Voltage: 80 V

With a maximum collector-emitter voltage of 80V, this transistor can be used in applications requiring higher voltage handling capabilities.

Maximum Collector Current (IC): 1 A

A maximum collector current of 1A allows the transistor to handle high currents without damage, making it suitable for power control applications.

Nominal Transition Frequency (fT): 50 MHz

High nominal transition frequency of 50MHz indicates good switching and amplification capabilities at higher frequencies, making this transistor suitable for high-speed applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N2993 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Texas Instruments

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

40

JESD-30 Code:

O-MUPM-W3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

200 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

POST/STUD MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

2 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

UPPER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N2993 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-739-1129, 5961007391129, 5961-01-351-2395, 5961013512395

NIIN

007391129, 013512395

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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