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SI3443DV-T2

Temic Semiconductors

SI3443DV-T2 by Temic Semiconductors

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; Qualification: Not Qualified; No. of Elements: 1;

Median Price

-

Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Assy Fe

Spain . 1,400 parts In-Stock

1+ parts

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100+ parts

-

1k+ parts

-

10k+ parts

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1,400

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-

-

-

Technical Specifications

Power Field Effect Transistors (FET) SI3443DV-T2 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Temic Semiconductors

Specs

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (ID):

4.4 A

Maximum Drain-Source On Resistance:

.065 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G

No. of Elements:

1

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

20 A

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Element Material:

SILICON

Trade Compliance

SI3443DV-T2 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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