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VNS1NV0413TR

STMicroelectronics

VNS1NV0413TR by STMicroelectronics

VNS1NV0413TR by STMicroelectronics is a compact MOS peripheral driver with built-in protections against transient, overcurrent, and thermal issues. It features an output current of 0.5 A and a fast turn-on time of 1 µs. Ideal for buffer or inverter applications in space-constrained designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

ACDS - Activité Composants Distribution Service

France . 2,000 parts In-Stock

1+ parts

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2,000

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Vyrian

USA . 1,861 parts In-Stock

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1,861

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Anansix

USA . 1,725 parts In-Stock

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1,725

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Digiode

USA . 564 parts In-Stock

1+ parts

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564

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Cyclops Electronics Ltd

UK . 120 parts In-Stock

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120

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 233 parts In-Stock

1+ parts

$12.408

100+ parts

-

1k+ parts

$11.167

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-

233

$12.408

-

$11.167

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MKK Technologies

India . 271 parts In-Stock

1+ parts

$23.333

100+ parts

-

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271

$23.333

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DigiPath Technology Company

USA . 271 parts In-Stock

1+ parts

$23.333

100+ parts

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271

$23.333

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Assy Fe

Spain . 13,500 parts In-Stock

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13,500

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Infinite Electronics LLP (Excess)

. 12,501 parts In-Stock

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12,501

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Kepictronics

USA . 11,500 parts In-Stock

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11,500

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Corphita

USA . 3,167 parts In-Stock

1+ parts

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3,167

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A-Z Elektronik GmbH

Germany . 2,400 parts In-Stock

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2,400

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Parana Technologies

USA . 1,593 parts In-Stock

1+ parts

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100+ parts

$14.836

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1,593

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$14.836

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Authorized Procurement Solutions

USA . 108 parts In-Stock

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108

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Overview

Unlock the potential of your designs with the VNS1NV0413TR from STMicroelectronics, a leader in high-quality semiconductor solutions. This robust peripheral driver offers built-in protections against transients, overcurrent, and overheating, ensuring reliability in demanding applications. Its compact footprint and efficient performance make it ideal for automotive, industrial, and consumer electronic projects, providing unmatched value that enhances product longevity and customer satisfaction. Choose quality; choose STMicroelectronics!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of durable plastic/epoxy material enhances the reliability and longevity of the product, making it suitable for various applications.

Surface Mount: YES

Surface mount capability allows for efficient use of PCB space and facilitates automated assembly processes, improving overall efficiency.

Package Shape: RECTANGULAR

The rectangular package shape optimizes board layout and provides flexibility in design for engineers and designers.

Built-in Protections: TRANSIENT; OVER CURRENT; OVER VOLTAGE; THERMAL

Comprehensive built-in protections enhance safety and reliability, preventing potential damage to the device during operation.

No. of Terminals: 8

Eight terminals allow for multiple connections and functionalities, providing versatility in integration with other components.

Package Style (Meter): SMALL OUTLINE

A small outline package style minimizes board space requirements, making it ideal for compact designs in peripherals.

Terminal Finish: NICKEL PALLADIUM GOLD

The high-quality terminal finish ensures superior conductivity and corrosion resistance, enhancing performance and reliability.

Terminal Position: DUAL

Dual terminal positioning improves connectivity options and allows for more convenient routing on the PCB.

Maximum Seated Height: 1.75 mm

A low maximum seated height facilitates integration into low-profile applications, ensuring versatility in design.

Width: 3.9 mm

A compact width makes this product suitable for space-constrained applications, enabling a more efficient layout.

Length: 4.9 mm

The short length enhances compatibility with various PCB designs while maintaining effective performance in peripheral applications.

Maximum Output Current: 0.5 A

0.5 A maximum output current provides sufficient power for most peripheral driver applications without requiring extensive additional circuitry.

Technology: MOS

MOS technology enables efficient switching and low on-resistance, resulting in reduced power loss during operation.

Terminal Form: GULL WING

Gull wing terminals ensure reliable mechanical connection and easy soldering, which aids in the manufacturing process.

Turn-on Time: 1 us

A fast turn-on time allows for rapid switching, improving the responsiveness of peripheral control applications.

Terminal Pitch: 1.27 mm

A 1.27 mm terminal pitch supports compatibility with standard PCB layouts, simplifying integration into new and existing designs.

Nominal Output Peak Current Limit: 1.7 A

The high nominal output peak current limit offers versatility in high-demand applications, allowing for unexpected load spikes.

Interface IC Type: BUFFER OR INVERTER BASED PERIPHERAL DRIVER

Compatibility with buffer or inverter designs provides flexibility in peripheral interfacing, accommodating a range of application needs.

Turn-off Time: 5.5 us

A reasonable turn-off time enables effective control of output signals, ensuring efficient operation in data transfer applications.

Output Current Flow Direction: SINK

The sink output current flow direction is commonly used in many applications, enhancing compatibility and ease of integration.

Technical Specifications

Peripheral Drivers VNS1NV0413TR attributes and parameters. Explore more Peripheral Drivers devices from STMicroelectronics

Specs

Built-in Protections:

TRANSIENT; OVER CURRENT; OVER VOLTAGE; THERMAL

Driver No. of Bits:

1

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Length:

4.9 mm

No. of Functions:

1

No. of Terminals:

8

Output Current Flow Direction:

SINK

Maximum Output Current:

.5 A

Nominal Output Peak Current Limit:

1.7 A

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Sub-Category:

Peripheral Drivers

Surface Mount:

YES

Technology:

MOS

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Turn-off Time:

5.5 us

Turn-on Time:

1 us

Width:

3.9 mm

Trade Compliance

VNS1NV0413TR Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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