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TYN1004

STMicroelectronics

TYN1004 by STMicroelectronics

TYN1004 by STMicroelectronics is a single SCR in a rectangular plastic package, ideal for high-voltage applications. It supports up to 1000 V reverse voltage and 60 A peak on-state current, with a max gate trigger current of 15 mA. Operating b/w -40 °C to 125°C, it's perfect for power control circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 4,649 parts In-Stock

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4,649

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Resion

USA . 4,000 parts In-Stock

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4,000

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Vyrian

USA . 3,693 parts In-Stock

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3,693

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Anansix

USA . 1,220 parts In-Stock

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1,220

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LIBRA Elektronik GmbH

Germany . 150 parts In-Stock

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150

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ECAB

Sweden . 14 parts In-Stock

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14

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,028 parts In-Stock

1+ parts

$1.984

100+ parts

-

1k+ parts

$1.786

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1,028

$1.984

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$1.786

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MKK Technologies

India . 1,044 parts In-Stock

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$3.732

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1,044

$3.732

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DigiPath Technology Company

USA . 1,044 parts In-Stock

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$3.732

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1,044

$3.732

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Corphita

USA . 1,392 parts In-Stock

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1,392

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Parana Technologies

USA . 1,234 parts In-Stock

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$2.373

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1,234

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$2.373

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Assy Fe

Spain . 91 parts In-Stock

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Overview

Unlock the power of precision with the TYN1004 from STMicroelectronics, a leader in semiconductor innovation. This high-quality Silicon Controlled Rectifier (SCR) excels in efficiency and reliability, making it ideal for various applications, from motor control to power management. With its robust design and optimized performance, the TYN1004 ensures enhanced durability and minimal energy loss, delivering exceptional value that propels your projects to success!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material ensures durability and resistance to environmental factors, making the product reliable in various applications.

Maximum DC Gate Trigger Current: 15 mA

A low gate trigger current makes it energy-efficient and minimizes power loss during operation.

Configuration: SINGLE

Single configuration allows for simplified circuit designs and reduces installation space requirements.

Non Repetitive Peak On-state Current: 60 A

High peak on-state current capability enables the rectifier to handle significant surges, enhancing performance in demanding applications.

Package Shape: RECTANGULAR

Rectangular packaging facilitates easy integration into compact designs and optimizes PCB layout.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide strong mechanical connections and ease of soldering, improving reliability in assembly.

Maximum On-state Current: 4 A

With a maximum on-state current of 4 A, this SCR can efficiently manage power loads in various electronic circuits.

Maximum Leakage Current: 2 mA

Low leakage current results in lower energy loss, making this device suitable for energy-sensitive applications.

Repetitive Peak Reverse Voltage: 1000 V

High reverse voltage rating allows the SCR to be used in high-voltage applications, providing versatility and robustness.

Maximum Repetitive Peak Off-state Leakage Current: 10 µA

Minimal off-state leakage current enhances efficiency and helps to reduce overall power consumption.

No. of Terminals: 3

Three terminals provide simplicity in configuration, making it easier to connect in various circuit designs.

Package Style (Meter): FLANGE MOUNT

Flange mount style allows for secure mounting in applications where vibration and movement are factors.

Maximum Operating Temperature: 125 °C

High operating temperature capability ensures reliable performance in demanding heat conditions.

Trigger Device Type: SCR

SCR technology is well-suited for applications requiring controlled rectification, making it ideal for power control.

Minimum Operating Temperature: -40 °C

Wide operating temperature range enables use in extreme environments without compromising performance.

Terminal Finish: MATTE TIN

The matte tin finish offers excellent solderability and corrosion resistance, enhancing long-term reliability.

Terminal Position: SINGLE

Single terminal position simplifies layout and installation processes in circuit designs.

Maximum RMS On-state Current: 4 A

Consistent RMS current handling makes the product suitable for efficient continuous operation in circuits.

Maximum DC Gate Trigger Voltage: 1.5 V

Low gate trigger voltage requirement enhances device compatibility with various drive circuits.

Repetitive Peak Off-state Voltage: 1000 V

This voltage rating provides assurance in high-voltage applications, ensuring reliable performance under stress.

Minimum Critical Rate of Rise of Off-state Voltage: 200 V/us

This feature enables the SCR to handle fast transients effectively, enhancing its performance in dynamic environments.

Maximum Holding Current: 30 mA

A low holding current value ensures that the SCR can turn off easily when controlling loads, improving circuit reliability.

Nominal Circuit Commutated Turn-off Time: 70 µs

Rapid turn-off time allows for efficient switching operations, making the product suitable for high-frequency applications.

Technical Specifications

Silicon Controlled Rectifiers (SCR) TYN1004 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from STMicroelectronics

Specs

Nominal Circuit Commutated Turn-off Time:

70 us

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

200 V/us

Maximum DC Gate Trigger Current:

15 mA

Maximum DC Gate Trigger Voltage:

1.5 V

Maximum Holding Current:

30 mA

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Leakage Current:

2 mA

Non Repetitive Peak On-state Current:

60 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

4 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

4 A

Maximum Repetitive Peak Off-state Leakage Current:

10 uA

Repetitive Peak Off-state Voltage:

1000 V

Repetitive Peak Reverse Voltage:

1000 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

SCR

Trade Compliance

TYN1004 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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