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TYN1008G

STMicroelectronics

TYN1008G by STMicroelectronics

TYN1008G by STMicroelectronics is a single SCR in a rectangular plastic package, ideal for high-voltage applications. It supports a max repetitive peak reverse voltage of 1000 V and non-repetitive peak on-state current of 84 A. Operating b/w -40 °C to 125°C, it’s perfect for power control circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,807 parts In-Stock

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2,807

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Anansix

USA . 2,729 parts In-Stock

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2,729

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Digiode

USA . 2,104 parts In-Stock

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2,104

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 938 parts In-Stock

1+ parts

$2.360

100+ parts

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1k+ parts

$2.124

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938

$2.360

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$2.124

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MKK Technologies

India . 592 parts In-Stock

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$4.437

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592

$4.437

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DigiPath Technology Company

USA . 592 parts In-Stock

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$4.437

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592

$4.437

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Corphita

USA . 2,686 parts In-Stock

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2,686

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Parana Technologies

USA . 1,806 parts In-Stock

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$2.822

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1,806

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$2.822

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Overview

Elevate your projects with the TYN1008G from STMicroelectronics, a leader in semiconductor innovation. This reliable Silicon Controlled Rectifier delivers exceptional performance across various applications, from motor control to power management. With its robust design and superior quality, the TYN1008G ensures seamless operation even in demanding environments. Trust in STMicroelectronics' legacy of excellence for cutting-edge solutions that empower your designs and optimize efficiency.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material ensures reliability and longevity in various applications.

Maximum DC Gate Trigger Current: 25 mA

Allows for efficient control with minimal input current, making it suitable for low-power applications.

Configuration: SINGLE

Single configuration simplifies circuit design and integration into existing systems.

Non Repetitive Peak On-state Current: 84 A

High peak capability, suitable for demanding applications requiring strong performance under transient conditions.

Package Shape: RECTANGULAR

Space-efficient design allows for optimized layout in electronic assemblies.

Terminal Form: THROUGH-HOLE

Ensures robust mechanical and electrical connections, enhancing reliability in various environments.

Maximum On-state Current: 5 A

Adequate for standard applications, allowing versatility in various electronic circuits.

Maximum Leakage Current: 2 mA

Low leakage minimizes power losses, improving energy efficiency in applications.

Repetitive Peak Reverse Voltage: 1000 V

High voltage handling capability makes it suitable for high-power applications and environments.

Maximum Repetitive Peak Off-state Leakage Current: 10 uA

Very low off-state leakage enhances system efficiency and reliability in standby mode.

No. of Terminals: 3

Three terminals provide simple wiring and connection options, improving usability.

Package Style (Meter): FLANGE MOUNT

Flange mount style ensures easy installation and better heat dissipation capabilities.

Maximum Operating Temperature: 125 °C

High-temperature rating allows operation in harsh environments, increasing application flexibility.

Trigger Device Type: SCR

SCR configuration provides excellent control of high power and voltage applications.

Minimum Operating Temperature: -40 °C

Ability to operate in extreme cold makes it suitable for a wide range of environments.

Terminal Finish: MATTE TIN

Matte tin finish ensures good solderability and corrosion resistance for long-term reliability.

Terminal Position: SINGLE

Single terminal positioning simplifies connection and minimizes potential error in wiring.

Maximum RMS On-state Current: 8 A

Allows for greater continuous current handling, making it a strong candidate for various applications.

Maximum DC Gate Trigger Voltage: 1.5 V

Low trigger voltage facilitates easier interfacing with control circuits.

Repetitive Peak Off-state Voltage: 1000 V

High voltage tolerance supports applications in power electronics, providing stability and safety.

Minimum Critical Rate of Rise of Off-state Voltage: 500 V/us

Fast voltage rise provides better performance in rapid switching applications.

Maximum Holding Current: 45 mA

Sensitive enough to ensure reliable operation under varying load conditions.

Nominal Circuit Commutated Turn-off Time: 70 us

Fast turn-off time enhances switching speed, making it ideal for dynamic applications.

Technical Specifications

Silicon Controlled Rectifiers (SCR) TYN1008G attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from STMicroelectronics

Specs

Nominal Circuit Commutated Turn-off Time:

70 us

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

500 V/us

Maximum DC Gate Trigger Current:

25 mA

Maximum DC Gate Trigger Voltage:

1.5 V

Maximum Holding Current:

45 mA

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Leakage Current:

2 mA

Non Repetitive Peak On-state Current:

84 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

5 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

8 A

Maximum Repetitive Peak Off-state Leakage Current:

10 uA

Repetitive Peak Off-state Voltage:

1000 V

Repetitive Peak Reverse Voltage:

1000 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

SCR

Trade Compliance

TYN1008G Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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