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TYN1008RG

STMicroelectronics

TYN1008RG by STMicroelectronics

TYN1008RG by STMicroelectronics is a single SCR in a rectangular plastic/epoxy package, ideal for high-power applications. It supports a max on-state current of 8 A, non-repetitive peak on-state current of 100 A, and operates up to 125 °C. With a peak reverse voltage of 1000 V, it's perfect for robust switching tasks.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,624 parts In-Stock

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7,624

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Digiode

USA . 4,102 parts In-Stock

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4,102

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Anansix

USA . 636 parts In-Stock

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636

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QIE Inc.

USA . 33 parts In-Stock

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33

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 651 parts In-Stock

1+ parts

$3.617

100+ parts

-

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$3.255

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651

$3.617

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$3.255

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MKK Technologies

India . 1,641 parts In-Stock

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$6.801

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$6.801

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DigiPath Technology Company

USA . 1,641 parts In-Stock

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$6.801

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1,641

$6.801

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AZTECH Wire

Italy . 54 parts In-Stock

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$10.520

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54

$10.520

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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Kepictronics

USA . 13,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 9,037 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,189 parts In-Stock

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Corphita

USA . 4,683 parts In-Stock

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Authorized Procurement Solutions

USA . 2,500 parts In-Stock

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2,500

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Parana Technologies

USA . 2,374 parts In-Stock

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$4.324

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2,374

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$4.324

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Overview

Unlock exceptional performance with the TYN1008RG from STMicroelectronics, a leader in innovative semiconductor solutions. This high-quality Silicon Controlled Rectifier (SCR) excels in reliability and efficiency, making it perfect for applications ranging from motor control to power supplies. With its robust design and impressive electrical characteristics, the TYN1008RG ensures seamless operation even in demanding conditions—empowering your projects with increased durability and reduced downtime.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material ensures durability and resistance to environmental factors, making the product suitable for a variety of applications.

Maximum DC Gate Trigger Current: 15 mA

A relatively low gate trigger current allows for efficient operation without requiring high input power, which can enhance system energy efficiency.

Configuration: SINGLE

The single configuration simplifies integration into circuits, making it easier to use in designs where space is a premium.

Non Repetitive Peak On-state Current: 100 A

This high peak current capacity allows the SCR to handle brief overload conditions, providing added robustness in peak load scenarios.

Package Shape: RECTANGULAR

The rectangular package shape facilitates easier mounting and alignment in various electronic assemblies.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide excellent mechanical support and stability, making the SCR suitable for both automated and manual assembly processes.

Maximum On-state Current: 8 A

The ability to handle up to 8 A in the on-state makes this SCR versatile for many power control applications.

Maximum Leakage Current: 2 mA

Low leakage current ensures efficient operation and reduces power loss, leading to improved system reliability and performance.

Repetitive Peak Reverse Voltage: 1000 V

A high reverse voltage rating allows this SCR to be used in high-voltage applications, broadening its potential use cases.

Number of Terminals: 3

Having three terminals supports common configurations for various triggering and load control applications.

Package Style (Meter): FLANGE MOUNT

Flange mounting provides additional mechanical stability and improves heat dissipation, making it ideal for high-power applications.

Maximum Operating Temperature: 125 °C

A high operating temperature allows the SCR to function reliably in demanding thermal environments, increasing its application range.

Trigger Device Type: SCR

As an SCR, this device is ideal for controlled rectification tasks, making it a preferred choice for various power electronics applications.

Minimum Operating Temperature: -40 °C

With a low operating temperature specification, this SCR ensures functionality even in extreme cold conditions, enhancing its versatility.

Terminal Finish: MATTE TIN

Matte tin terminal finish improves solderability and provides enhanced protection against corrosion, ensuring reliable electrical connections.

Terminal Position: SINGLE

Single terminal position simplifies circuit design and implementation, reducing the complexity in layout.

Maximum RMS On-state Current: 8 A

Supporting up to 8 A RMS current allows this SCR to effectively manage the continuous load, making it suitable for various applications.

Maximum DC Gate Trigger Voltage: 1.3 V

A low gate trigger voltage helps in minimizing control circuit design complexity and enhances overall system efficiency.

Case Connection: ANODE

Anode connection allows for straightforward integration into most circuits, facilitating easier design processes.

Repetitive Peak Off-state Voltage: 1000 V

High off-state voltage capability ensures the SCR can effectively manage high voltage applications, contributing to its reliability.

Minimum Critical Rate of Rise of Off-state Voltage: 150 V/us

A high critical rate of rise allows for better performance in fast-switching applications, increasing overall system efficiency.

Maximum Holding Current: 30 mA

A low holding current requirement helps in maintaining stable operation in applications with varying loads.

Technical Specifications

Silicon Controlled Rectifiers (SCR) TYN1008RG attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from STMicroelectronics

Specs

Case Connection:

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

150 V/us

Maximum DC Gate Trigger Current:

15 mA

Maximum DC Gate Trigger Voltage:

1.3 V

Maximum Holding Current:

30 mA

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Leakage Current:

2 mA

Non Repetitive Peak On-state Current:

100 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

8 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

8 A

Repetitive Peak Off-state Voltage:

1000 V

Repetitive Peak Reverse Voltage:

1000 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

SCR

Trade Compliance

TYN1008RG Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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