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TYN1010

STMicroelectronics

TYN1010 by STMicroelectronics

TYN1010 by STMicroelectronics is a single SCR designed for high-performance applications. It features a max DC gate trigger current of 15 mA, non-repetitive peak on-state current of 100 A, and operates within -40 °C to 125°C. Ideal for controlling power in industrial circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,904 parts In-Stock

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Vyrian

USA . 3,412 parts In-Stock

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Anansix

USA . 1,588 parts In-Stock

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1,588

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ECAB

Sweden . 217 parts In-Stock

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217

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IDEA Electronic Components Group

UK . 37 parts In-Stock

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$2.135

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$1.922

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37

$2.135

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$1.922

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MKK Technologies

India . 1,045 parts In-Stock

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$4.015

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$4.015

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DigiPath Technology Company

USA . 1,045 parts In-Stock

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$4.015

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$4.015

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Parana Technologies

USA . 2,141 parts In-Stock

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$2.553

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2,141

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$2.553

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Corphita

USA . 1,871 parts In-Stock

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Overview

Elevate your projects with the TYN1010 from STMicroelectronics, a trusted leader in innovative semiconductor solutions. This high-performance Silicon Controlled Rectifier (SCR) offers unparalleled reliability and efficiency for demanding applications like motor control and power management. With robust performance in extreme temperatures and minimal leakage, the TYN1010 not only enhances device longevity but also ensures optimal energy savings, making it an essential choice for engineers seeking quality and excellence.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This durable material ensures reliability and resistance to environmental factors, making it suitable for various applications.

Maximum DC Gate Trigger Current: 15 mA

A relatively low trigger current allows for easy interfacing with control circuits, enhancing design flexibility.

Configuration: SINGLE

The single configuration simplifies circuit design, making it easier to integrate into existing systems.

Non Repetitive Peak On-state Current: 100 A

This high peak current capability provides versatility for handling significant load variations, making it ideal for demanding applications.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient space utilization on PCBs, facilitating compact designs.

Terminal Form: THROUGH-HOLE

Through-hole mounting ensures robust connections and improved thermal performance, suitable for high power applications.

Maximum On-state Current: 10 A

This on-state current rating allows for reliable operation in various circuit applications without overheating.

Maximum Leakage Current: 2 mA

Low leakage current reduces power losses, increasing overall efficiency in the circuit.

Repetitive Peak Reverse Voltage: 1000 V

A high reverse voltage rating ensures robust performance in high-voltage environments, enhancing application reliability.

Maximum Repetitive Peak Off-state Leakage Current: 10 µA

Minimal off-state leakage contributes to energy efficiency, making it ideal for energy-sensitive applications.

No. of Terminals: 3

With three terminals, it offers flexibility in circuit design, allowing for easier integration into various layouts.

Package Style (Meter): FLANGE MOUNT

Flange mount design allows for secure mounting, improving thermal management and mechanical stability.

Maximum Operating Temperature: 125 °C

High operational temperature range ensures functionality in demanding thermal environments, suitable for industrial uses.

Trigger Device Type: SCR

As a Silicon Controlled Rectifier, it provides efficient control over high power, being highly effective in switching applications.

Minimum Operating Temperature: -40 °C

This wide temperature range allows for application in extreme conditions, increasing versatility across environments.

Terminal Finish: MATTE TIN

Tin finish provides good solderability and resistance to corrosion, ensuring long-term reliability.

Terminal Position: SINGLE

Single terminal position simplifies connections, streamlining the assembly process.

Maximum RMS On-state Current: 10 A

Ensures reliable performance at higher power levels, making it suitable for robust applications.

Maximum DC Gate Trigger Voltage: 1.5 V

Low trigger voltage enhances compatibility with a variety of control circuits, facilitating easier integration.

Repetitive Peak Off-state Voltage: 1000 V

This high off-state voltage capability ensures the device can withstand substantial voltage spikes, improving circuit robustness.

Minimum Critical Rate of Rise of Off-state Voltage: 200 V/µs

The ability to handle rapid voltage changes enhances reliability and performance in dynamically changing conditions.

Maximum Holding Current: 30 mA

A low holding current requirement ensures the SCR turns off effectively in a wide range of circuits.

Nominal Circuit Commutated Turn-off Time: 70 µs

Fast turn-off time allows for efficient switching in applications, enhancing operational performance.

Technical Specifications

Silicon Controlled Rectifiers (SCR) TYN1010 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from STMicroelectronics

Specs

Additional Features:

HIGH RELIABILITY

Nominal Circuit Commutated Turn-off Time:

70 us

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

200 V/us

Maximum DC Gate Trigger Current:

15 mA

Maximum DC Gate Trigger Voltage:

1.5 V

Maximum Holding Current:

30 mA

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Leakage Current:

2 mA

Non Repetitive Peak On-state Current:

100 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

10 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

10 A

Maximum Repetitive Peak Off-state Leakage Current:

10 uA

Repetitive Peak Off-state Voltage:

1000 V

Repetitive Peak Reverse Voltage:

1000 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

SCR

Trade Compliance

TYN1010 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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