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TS944BIDT

STMicroelectronics

TS944BIDT by STMicroelectronics

TS944BIDT by STMicroelectronics is a micropower operational amplifier featuring a max input offset voltage of 2000 µV and an impressive common mode reject ratio of 85 dB. It operates within a supply range of 3-12 V, making it ideal for industrial applications. With its compact design and low-bias current, it's perfect for precision signal processing in space-constrained environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,147 parts In-Stock

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8,147

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Digiode

USA . 2,577 parts In-Stock

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2,577

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Anansix

USA . 1,564 parts In-Stock

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1,564

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,767 parts In-Stock

1+ parts

$5.170

100+ parts

-

1k+ parts

$4.653

10k+ parts

-

1,767

$5.170

-

$4.653

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Microchip USA

USA . 342 parts In-Stock

1+ parts

$7.747

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-

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342

$7.747

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MKK Technologies

India . 1,304 parts In-Stock

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$9.723

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1,304

$9.723

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DigiPath Technology Company

USA . 1,304 parts In-Stock

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$9.723

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1,304

$9.723

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AZTECH Wire

Italy . 220 parts In-Stock

1+ parts

$17.690

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220

$17.690

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Component Stockers USA

USA . 540 parts In-Stock

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$99.990

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540

$99.990

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QUARKTWIN TECHNOLOGY LTD

USA . 18,870 parts In-Stock

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18,870

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A-Z Elektronik GmbH

Germany . 6,788 parts In-Stock

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6,788

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Vigor

Singapore . 3,460 parts In-Stock

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3,460

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Corphita

USA . 3,067 parts In-Stock

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3,067

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Parana Technologies

USA . 1,190 parts In-Stock

1+ parts

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$6.182

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1,190

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$6.182

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Overview

Unlock precision and efficiency with the TS944BIDT operational amplifier from STMicroelectronics. Renowned for its quality, STMicroelectronics combines innovation with reliability, making this op-amp ideal for a wide range of applications, from industrial automation to consumer electronics. With exceptional low bias current and robust performance, it ensures your designs are not only powerful but also energy-efficient, delivering unmatched value for engineers and manufacturers alike. Elevate your projects with confidence!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material ensures durability and protection against mechanical stress and environmental factors.

Maximum Input Offset Voltage: 2000 uV

A low maximum input offset voltage helps maintain signal integrity and accuracy in amplification tasks.

Maximum Average Bias Current (IIB): 0.00015 uA

With a very low bias current, this op amp minimizes errors in sensitive applications, making it ideal for precise measurements.

Surface Mount: YES

The surface mount capability facilitates easy integration into compact circuit designs, saving space on PCBs.

No. of Functions: 4

Having four functions in one package adds versatility, allowing for complex applications without requiring multiple components.

Package Shape: RECTANGULAR

The rectangular shape is beneficial for efficient PCB layout and offers better space utilization.

Nominal Common Mode Reject Ratio: 85 dB

A high common mode rejection ratio ensures that common noise is effectively filtered out, enhancing signal quality.

Nominal Supply Voltage / Vsup (V): 3

Operating at a nominal supply voltage of 3V allows for low power consumption, which is ideal for battery-powered applications.

Power Supplies (V): 3/5

The flexibility of supporting both 3V and 5V power supplies expands its usability across various circuits.

No. of Terminals: 14

Having 14 terminals provides enough connection points for various configurations and functionalities.

Package Style (Meter): SMALL OUTLINE

The small outline package style is suited for space-constrained applications, allowing for compact designs.

Maximum Supply Voltage Limit: 12 V

A maximum supply voltage limit of 12V gives designers the freedom to use this op amp in a wide range of applications.

Maximum Operating Temperature: 85 °C

An operating temperature limit of 85 °C makes this op amp suitable for industrial applications where heat is a concern.

Maximum Bias Current (IIB) @ 25 °C: 0.00015 uA

The consistent low bias current at 25 °C ensures reliability and accuracy across temperature variations.

Frequency Compensation: YES

Frequency compensation allows for stable operation across a range of frequencies, optimizing performance.

Minimum Operating Temperature: -40 °C

With a minimum operating temperature of -40 °C, this op amp is suitable for extreme environments and applications.

Terminal Finish: NICKEL PALLADIUM GOLD

The high-quality terminal finish ensures excellent conductivity and corrosion resistance, increasing longevity.

Terminal Position: DUAL

Dual terminal positioning can enhance connection reliability and integration flexibility in circuit designs.

Maximum Seated Height: 1.75 mm

The compact seated height enables easy integration into low-profile PCB designs.

Width: 3.9 mm

A width of 3.9 mm allows for efficient space management on PCBs, ideal for compact applications.

Micropower: YES

Being a micropower device makes it an excellent choice for battery-operated or energy-sensitive applications.

Length: 8.65 mm

The length of 8.65 mm contributes to its compact design, facilitating high-density PCB layouts.

Temperature Grade: INDUSTRIAL

An industrial temperature grade signifies reliability and performance in tough operational environments.

Low-Bias: YES

The low-bias feature enhances its suitability for high-precision applications, reducing the chance of measurement errors.

Nominal Unity Gain Bandwidth: 10 kHz

A unity gain bandwidth of 10 kHz ensures adequate performance in many general-purpose circuits.

Technology: BICMOS

Utilizing BICMOS technology combines the benefits of both Bipolar and CMOS technologies, optimizing power and speed.

Terminal Form: GULL WING

The gull-wing terminal form enhances soldering reliability and facilitates easy assembly.

Amplifier Type: OPERATIONAL AMPLIFIER

As an operational amplifier, it is highly versatile, suitable for a multitude of applications such as amplifying, filtering, and signal processing.

Maximum Supply Current: 0.0074 mA

A very low maximum supply current contributes to energy efficiency, particularly important in low-power applications.

Architecture: VOLTAGE-FEEDBACK

Voltage-feedback architecture is ideal for many linear amplifications and precision applications.

Packing Method: TAPE AND REEL

The tape and reel packing method enhances ease of handling during assembly, supporting automated manufacturing processes.

Nominal Slew Rate: 4500 V/us

A high slew rate of 4500 V/us allows for rapid response to changes in input signals, ensuring better performance in dynamic applications.

Terminal Pitch: 1.27 mm

A standard terminal pitch of 1.27 mm facilitates compatibility with various PCBs and soldering techniques.

Technical Specifications

Operational Amplifiers (Op Amps) TS944BIDT attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from STMicroelectronics

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

BICMOS

Power Supply:

3/5 V

Total Functions:

4

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Micropower:

Yes

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

10 kHz

Nominal Common Mode Rejection Ratio (CMRR ):

85 dB

Input Offset Voltage Limit:

2000 uV

Nominal Slew Rate:

4500 V/us

Peak Bias Current:

150 pA

Maximum Bias Current (IIB) @25 °C:

150 pA

Operational Characteristics

Nominal Supply Voltage:

3 V

Maximum Supply Voltage:

12 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

85 °C (185 °F)

Maximum Supply Current:

7.4 μA

Physical Characteristics

Length:

0.341 in (8.65 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

14

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP14,.25

Trade Compliance

TS944BIDT Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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