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TS942BIPT

STMicroelectronics

TS942BIPT by STMicroelectronics

TS942BIPT by STMicroelectronics is a micropower operational amplifier with a max input offset voltage of 2000 µV and an impressive common mode reject ratio of 85 dB. It operates within a supply range of 2.5-5 V, making it ideal for low-power applications. Its compact design and dual function make it suitable for industrial use in space-constrained environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Anansix

USA . 2,360 parts In-Stock

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2,360

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R&J Components

USA . 1,956 parts In-Stock

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1,956

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Vyrian

USA . 979 parts In-Stock

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979

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Digiode

USA . 912 parts In-Stock

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912

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Microchip USA

USA . 314 parts In-Stock

1+ parts

$3.503

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314

$3.503

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IDEA Electronic Components Group

UK . 46 parts In-Stock

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$4.229

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$3.806

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46

$4.229

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$3.806

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MKK Technologies

India . 1,740 parts In-Stock

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$7.953

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1,740

$7.953

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DigiPath Technology Company

USA . 1,740 parts In-Stock

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$7.953

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1,740

$7.953

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Corphita

USA . 4,852 parts In-Stock

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Vigor

Singapore . 3,117 parts In-Stock

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Perfect Parts

USA . 2,191 parts In-Stock

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2,191

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Parana Technologies

USA . 152 parts In-Stock

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$5.057

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152

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$5.057

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Overview

Unlock precision and performance with the TS942BIPT from STMicroelectronics, a leader in innovative semiconductor solutions. This dual operational amplifier combines ultra-low bias currents with exceptional common-mode rejection, making it perfect for sensitive applications in industrial and consumer electronics. Enjoy enhanced reliability and efficiency in your designs, backed by ST's commitment to quality and cutting-edge technology. Elevate your projects with this compact, micropower performer!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides good reliability and durability, making it suitable for various applications.

Maximum Input Offset Voltage: 2000 uV

A low input offset voltage ensures accurate signal amplification, enhancing overall performance in precision applications.

Maximum Average Bias Current (IIB): 0.00015 uA

This low average bias current contributes to reduced power consumption, making the op amp ideal for battery-operated devices.

Surface Mount: YES

The surface mount capability allows for better thermal performance and ease of integration into compact circuits.

No. of Functions: 2

Having dual functionality increases the versatility of the op amp, enabling it to be used in various configurations.

Package Shape: RECTANGULAR

The rectangular package shape optimizes the layout and space utilization on printed circuit boards.

Nominal Common Mode Reject Ratio: 85 dB

A high common mode reject ratio ensures that the op amp maintains signal integrity by effectively rejecting noise.

Nominal Supply Voltage / Vsup (V): 3

Fits well within low-voltage applications, making it suitable for modern, energy-efficient designs.

Power Supplies (V): 2.5/5

Supports a range of power supply voltages, increasing compatibility with different circuits.

No. of Terminals: 8

The 8-terminal configuration allows for flexible circuit design and integration into complex systems.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

The thin profile is ideal for space-constrained applications, facilitating compact designs.

Maximum Supply Voltage Limit: 12 V

A high supply voltage limit enhances flexibility in design, allowing it to interface with a wide variety of systems.

Maximum Operating Temperature: 85 °C

An extended operating temperature range makes it suitable for use in industrial applications.

Maximum Bias Current (IIB) @25 °C: 0.00015 uA

Low bias current at a standard operating temperature minimizes the impact on circuit performance.

Frequency Compensation: YES

This feature assures stability across a variety of frequency responses, enhancing overall performance and reliability.

Minimum Operating Temperature: -40 °C

Wide temperature range allows the device to be used in extreme environments, ensuring reliable operation in challenging conditions.

Terminal Finish: Nickel/Palladium/Gold (Ni/Pd/Au)

The high-quality terminal finish enhances solderability, ensuring reliable connections and longevity.

Terminal Position: DUAL

Dual terminal position helps in flexibility of layout and ease of integration into different circuit designs.

Maximum Seated Height: 1.2 mm

Low seated height is suitable for slim designs and applications where space is critical.

Width: 3 mm

Compact width allows for easy integration into small electronic devices, enhancing design efficiency.

Micropower: YES

Micropower consumption is ideal for battery-powered and low-energy applications, extending battery life.

Maximum Time At Peak Reflow Temperature (s): 10

This specification ensures compatibility with standard soldering processes, making assembly easier.

Peak Reflow Temperature (°C): 260

Able to withstand high reflow temperatures ensures that the op amp can be reliably assembled through typical SMT processes.

Length: 4.4 mm

Short length further enhances design flexibility, allowing for efficient use of space in tight applications.

Temperature Grade: INDUSTRIAL

Rated for industrial use, ensuring reliability and performance under demanding operating conditions.

Low-Bias: YES

Low-bias design minimizes input current, which is critical for high precision and low drift applications.

Nominal Unity Gain Bandwidth: 10 kHz

The appropriate bandwidth makes it suitable for various signal processing tasks, including audio and control applications.

Technology: BICMOS

BICMOS technology combines high-speed performance with low power consumption, making it ideal for modern applications.

Terminal Form: GULL WING

Gull wing terminals provide excellent solder joint reliability and ease of manual or automated assembly.

Amplifier Type: OPERATIONAL AMPLIFIER

Operational amplifiers are versatile components, widely used in signal conditioning, filtering, and amplification.

Maximum Supply Current: 0.0037 mA

Very low supply current ensures minimal power waste, making it suitable for energy-efficient applications.

Architecture: VOLTAGE-FEEDBACK

Voltage-feedback architecture is known for its stability and linearity, ideal for a wide range of applications.

Packing Method: TAPE AND REEL

Tape and reel packaging simplifies automated assembly processes, increasing production efficiency.

Nominal Slow Rate: 4500 V/us

High slew rate allows the op amp to handle rapid signal changes, ensuring fidelity in high-speed applications.

Terminal Pitch: 0.65 mm

A 0.65 mm pitch is standard for many PCB designs, ensuring compatibility with existing layouts.

Technical Specifications

Operational Amplifiers (Op Amps) TS942BIPT attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from STMicroelectronics

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

BICMOS

Power Supply:

2.5/5 V

Total Functions:

2

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Micropower:

Yes

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

10 kHz

Nominal Common Mode Rejection Ratio (CMRR ):

85 dB

Input Offset Voltage Limit:

2000 uV

Nominal Slew Rate:

4500 V/us

Peak Bias Current:

150 pA

Maximum Bias Current (IIB) @25 °C:

150 pA

Operational Characteristics

Nominal Supply Voltage:

3 V

Maximum Supply Voltage:

12 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

85 °C (185 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Reflow Peak Time Limit:

10 s

Maximum Supply Current:

3.7 μA

Physical Characteristics

Length:

0.173 in (4.4 mm)

Width:

0.118 in (3 mm)

Maximum Seated Height:

0.047 in (1.2 mm)

Total Terminals:

8

Terminal Pitch:

0.026 in (0.65 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel/Palladium/Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

Package Shape:

Package Style:

Small Outline, Thin Profile, Shrink Pitch

Package Equivalence Code:

TSSOP8,.25

Trade Compliance

TS942BIPT Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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