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TS942AIN

STMicroelectronics

TS942AIN by STMicroelectronics

STMicroelectronics' TS942AIN is a dual operational amplifier with 85dB CMRR and 10kHz unity gain bandwidth. Ideal for industrial applications, it operates b/w -40 to 85 °C, with micropower consumption of 0.0037mA at 3V supply voltage.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,471 parts In-Stock

1+ parts

-

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6,471

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Digiode

USA . 4,233 parts In-Stock

1+ parts

-

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-

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4,233

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Anansix

USA . 884 parts In-Stock

1+ parts

-

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-

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884

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 1,306 parts In-Stock

1+ parts

$0.410

100+ parts

$0.400

1k+ parts

$0.398

10k+ parts

-

1,306

$0.410

$0.400

$0.398

-

IDEA Electronic Components Group

UK . 1,517 parts In-Stock

1+ parts

$3.841

100+ parts

-

1k+ parts

$3.457

10k+ parts

-

1,517

$3.841

-

$3.457

-

MKK Technologies

India . 504 parts In-Stock

1+ parts

$7.223

100+ parts

-

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-

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-

504

$7.223

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DigiPath Technology Company

USA . 504 parts In-Stock

1+ parts

$7.223

100+ parts

-

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-

504

$7.223

-

-

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Microchip USA

USA . 188 parts In-Stock

1+ parts

$18.515

100+ parts

-

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188

$18.515

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-

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AZTECH Wire

Italy . 151 parts In-Stock

1+ parts

$21.260

100+ parts

-

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151

$21.260

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Component Stockers USA

USA . 287 parts In-Stock

1+ parts

$99.990

100+ parts

-

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287

$99.990

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Kepictronics

USA . 10,000 parts In-Stock

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10,000

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Vigor

Singapore . 10,000 parts In-Stock

1+ parts

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10,000

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A-Z Elektronik GmbH

Germany . 6,077 parts In-Stock

1+ parts

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6,077

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Assy Fe

Spain . 2,911 parts In-Stock

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2,911

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Corphita

USA . 2,344 parts In-Stock

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2,344

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Parana Technologies

USA . 2,136 parts In-Stock

1+ parts

-

100+ parts

$4.592

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10k+ parts

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2,136

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$4.592

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Overview

Unleash the power of precision with the TS942AIN operational amplifier by STMicroelectronics. Crafted with cutting-edge BICMOS technology, this micropower amplifier offers unparalleled quality and reliability for a wide range of applications in various industries. With its low-bias design and industrial temperature grade, the TS942AIN ensures optimal performance even in the harshest environments. Experience seamless operation and exceptional efficiency with this versatile amplifier that delivers superior value and performance to customers seeking top-notch solutions.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the operational amplifier.

Maximum Input Offset Voltage: 5000 uV

Low input offset voltage ensures accurate signal processing with minimal errors.

Maximum Average Bias Current (IIB): 0.00015 uA

Low bias current helps in maintaining stable operation and minimizes power consumption.

Nominal Common Mode Reject Ratio: 85 dB

High common mode rejection ratio ensures effective rejection of noise and interference from the input signal.

Nominal Supply Voltage / Vsup (V): 3

Operates effectively within a nominal supply voltage range, making it suitable for various applications.

Technology: BICMOS

Utilizes BiCMOS technology for improved performance and efficiency in signal processing.

Amplifier Type: OPERATIONAL AMPLIFIER

Designed specifically for high-performance amplification of signals, making it a reliable choice for amplification applications.

Technical Specifications

Operational Amplifiers (Op Amps) TS942AIN attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from STMicroelectronics

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

BICMOS

Power Supply:

2.5/5 V

Total Functions:

2

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Micropower:

Yes

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

10 kHz

Nominal Common Mode Rejection Ratio (CMRR ):

85 dB

Input Offset Voltage Limit:

5000 uV

Nominal Slew Rate:

4500 V/us

Peak Bias Current:

150 pA

Maximum Bias Current (IIB) @25 °C:

150 pA

Operational Characteristics

Nominal Supply Voltage:

3 V

Maximum Supply Voltage:

12 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

85 °C (185 °F)

Maximum Supply Current:

3.7 μA

Physical Characteristics

Width:

0.3 in (7.62 mm)

Maximum Seated Height:

0.2 in (5.08 mm)

Total Terminals:

8

Terminal Pitch:

0.1 in (2.54 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Matte Tin

Package Body Material:

Plastic/Epoxy

Surface Mount:

No

Manufacturing and Reliability

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDIP-T8

JESD-609 Code:

e3

Packaging and Shipping

Packing Method:

Tube

Package Code:

DIP

Package Shape:

Package Style:

In Line

Package Equivalence Code:

DIP8,.3

Trade Compliance

TS942AIN Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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