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TS941IDT

STMicroelectronics

TS941IDT by STMicroelectronics

TS941IDT from STMicroelectronics is a micropower operational amplifier ideal for industrial applications. It features a max input offset voltage of 10 mV, low bias current of 0.15 nA, and operates within a supply range of 3-12 V. Its compact design ensures efficient performance in space-constrained environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 11,803 parts In-Stock

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11,803

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Digiode

USA . 2,670 parts In-Stock

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2,670

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Anansix

USA . 2,330 parts In-Stock

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2,330

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 380 parts In-Stock

1+ parts

$0.602

100+ parts

-

1k+ parts

$0.542

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-

380

$0.602

-

$0.542

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MKK Technologies

India . 588 parts In-Stock

1+ parts

$1.131

100+ parts

-

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588

$1.131

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DigiPath Technology Company

USA . 588 parts In-Stock

1+ parts

$1.131

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-

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588

$1.131

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AZTECH Wire

Italy . 659 parts In-Stock

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$11.600

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659

$11.600

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Microchip USA

USA . 412 parts In-Stock

1+ parts

$17.691

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412

$17.691

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Perfect Parts

USA . 56,000 parts In-Stock

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56,000

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Kepictronics

USA . 10,500 parts In-Stock

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10,500

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Authorized Procurement Solutions

USA . 5,500 parts In-Stock

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5,500

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A-Z Elektronik GmbH

Germany . 3,000 parts In-Stock

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3,000

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Corphita

USA . 2,418 parts In-Stock

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2,418

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Vigor

Singapore . 2,200 parts In-Stock

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2,200

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Parana Technologies

USA . 798 parts In-Stock

1+ parts

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$0.719

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798

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$0.719

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Overview

Unlock unparalleled performance with the TS941IDT from STMicroelectronics, a leader in innovative semiconductor solutions. This versatile operational amplifier excels in precision applications, offering low power consumption and robust reliability across a wide temperature range. Ideal for everything from industrial automation to consumer electronics, the TS941IDT ensures superior signal integrity, empowering your designs with unmatched quality and efficiency. Elevate your projects with confidence!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The durable plastic/epoxy material ensures reliable performance in various environments, making it suitable for industrial applications.

Maximum Input Offset Voltage: 10000 uV

A maximum input offset voltage of 10 mV allows for accurate signal amplification, minimizing distortion in sensitive applications.

Maximum Average Bias Current (IIB): 0.00015 uA

This low average bias current contributes to enhanced circuit efficiency and is essential for battery-operated devices.

Surface Mount: YES

The surface mount capability supports efficient installation on compact PCB designs, ideal for modern electronics.

Package Shape: RECTANGULAR

The rectangular package shape provides a compact footprint, optimizing space usage on PCB layouts.

Nominal Common Mode Reject Ratio: 85 dB

A high common mode reject ratio enhances the ability to filter out noise, ensuring clean signal amplification.

Nominal Supply Voltage / Vsup (V): 3

Operating at a nominal supply voltage of 3V makes this op-amp suitable for low-power applications.

Power Supplies (V): 3/5

Compatibility with both 3V and 5V power supplies adds versatility for various circuit designs.

No. of Terminals: 8

The 8-terminal configuration allows for multiple connections and flexible circuit design options.

Package Style (Meter): SMALL OUTLINE

The small outline package style is conducive to high-density applications where space is a premium.

Maximum Supply Voltage Limit: 12 V

The ability to handle supply voltages up to 12V broadens the range of applications for this op-amp.

Maximum Operating Temperature: 85 °C

Withstanding high temperatures makes this op-amp suitable for harsh environments in industrial applications.

Maximum Bias Current (IIB) @25 °C: 0.00015 uA

Consistent low bias current at room temperature enhances reliability and stability in performance.

Frequency Compensation: YES

Frequency compensation ensures stable performance over a range of frequencies, making it reliable for various signal processing tasks.

Minimum Operating Temperature: -40 °C

The ability to operate in extreme low temperatures makes this op-amp ideal for outdoor and industrial applications.

Terminal Finish: NICKEL PALLADIUM GOLD

The premium terminal finish ensures excellent conductivity and corrosion resistance for improved longevity.

Terminal Position: DUAL

Dual terminal positioning facilitates easy and flexible integration into existing designs.

Maximum Seated Height: 1.75 mm

A low seated height contributes to compact device designs, enabling smaller final product designs.

Width: 3.9 mm

The narrow width allows for high-density interconnectivity in compact electronic designs.

Micropower: YES

Micropower capability ensures low energy consumption, which is vital for battery-powered and portable applications.

Length: 4.9 mm

The short length aids in reducing PCB space usage, making it ideal for space-constrained applications.

Temperature Grade: INDUSTRIAL

Rated for industrial environments, it guarantees reliability and performance in demanding conditions.

Low-Bias: YES

With low bias characteristics, this op-amp is perfect for low-noise applications where precision is critical.

Nominal Unity Gain Bandwidth: 10 kHz

A unity gain bandwidth of 10 kHz makes this op-amp suitable for a range of signal amplification tasks.

Technology: BICMOS

Utilizing BICMOS technology enhances performance characteristics like speed and power efficiency.

Terminal Form: GULL WING

The gull wing terminal form enables stable surface mounting and efficient soldering processes.

Amplifier Type: OPERATIONAL AMPLIFIER

Being an operational amplifier, it is versatile and can be used in various applications from audio to instrumentation.

Maximum Supply Current: 0.00185 mA

Very low supply current ensures minimal impact on battery life, making this ideal for portable devices.

Architecture: VOLTAGE-FEEDBACK

The voltage-feedback architecture supports a wide range of applications with predictable performance.

Packing Method: TAPE AND REEL

The tape and reel packing method supports automated assembly, improving manufacturing efficiency.

Nominal Slow Rate: 4500 V/us

A high nominal slew rate of 4500 V/us enables rapid signal response, ideal for fast applications.

Terminal Pitch: 1.27 mm

The standard terminal pitch of 1.27 mm is widely compatible with a variety of PCB layouts, ensuring ease of design.

Technical Specifications

Operational Amplifiers (Op Amps) TS941IDT attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from STMicroelectronics

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

BICMOS

Power Supply:

3/5 V

Total Functions:

1

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Micropower:

Yes

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

10 kHz

Nominal Common Mode Rejection Ratio (CMRR ):

85 dB

Input Offset Voltage Limit:

10000 uV

Nominal Slew Rate:

4500 V/us

Peak Bias Current:

150 pA

Maximum Bias Current (IIB) @25 °C:

150 pA

Operational Characteristics

Nominal Supply Voltage:

3 V

Maximum Supply Voltage:

12 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

85 °C (185 °F)

Maximum Supply Current:

1.85 μA

Physical Characteristics

Length:

0.193 in (4.9 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

8

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP8,.25

Trade Compliance

TS941IDT Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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