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TS507CD

STMicroelectronics

TS507CD by STMicroelectronics

TS507CD by STMicroelectronics is a low-offset operational amplifier with a max input offset voltage of 550 µV and a common mode reject ratio of 115 dB. It operates at supply voltages of 3/5 V, making it ideal for precision applications. Its compact design and surface mount capability enhance versatility in electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,911 parts In-Stock

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7,911

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Digiode

USA . 3,193 parts In-Stock

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3,193

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Anansix

USA . 2,360 parts In-Stock

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2,360

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Distributors (Availability)

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Microchip USA

USA . 346 parts In-Stock

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$1.216

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-

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346

$1.216

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IDEA Electronic Components Group

UK . 1,988 parts In-Stock

1+ parts

$2.244

100+ parts

-

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$2.019

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1,988

$2.244

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$2.019

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MKK Technologies

India . 2,241 parts In-Stock

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$4.219

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2,241

$4.219

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DigiPath Technology Company

USA . 2,241 parts In-Stock

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$4.219

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2,241

$4.219

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AZTECH Wire

Italy . 648 parts In-Stock

1+ parts

$21.340

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648

$21.340

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Component Stockers USA

USA . 279 parts In-Stock

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$99.990

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279

$99.990

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Vigor

Singapore . 2,215 parts In-Stock

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2,215

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Corphita

USA . 2,106 parts In-Stock

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2,106

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Parana Technologies

USA . 463 parts In-Stock

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$2.683

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463

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$2.683

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Overview

Elevate your designs with the TS507CD from STMicroelectronics, a top-tier operational amplifier renowned for its precision and reliability. With unmatched low offset voltage and minimal bias current, this versatile op-amp is perfect for applications demanding high accuracy, such as audio processing and data acquisition. Trust in STMicroelectronics’ legacy of quality to deliver exceptional performance, ensuring your projects achieve their full potential with confidence and efficiency.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body ensures good durability and protection against environmental factors, making it suitable for a variety of applications.

Maximum Input Offset Voltage: 550 uV

A low input offset voltage improves accuracy in signal processing, making this op amp ideal for precision applications.

Maximum Average Bias Current (IIB): 0.075 uA

The low average bias current reduces errors in high-impedance sensor circuits, enhancing overall performance.

Surface Mount: YES

As a surface mount device, it allows for compact PCB designs, facilitating higher density layouts in modern electronics.

Package Shape: RECTANGULAR

The rectangular package shape optimizes space utilization on the PCB, improving design efficiency.

Nominal Common Mode Reject Ratio: 115 dB

A high CMRR guarantees excellent rejection of common-mode signals, improving the signal integrity in noisy environments.

Nominal Supply Voltage / Vsup (V): 5

A nominal supply voltage of 5V is ideal for many digital and analog applications, ensuring compatibility with common logic levels.

Power Supplies (V): 3/5

The versatility of operating on both 3V and 5V supplies makes it adaptable for various circuit designs.

No. of Terminals: 8

With eight terminals, it provides sufficient connectivity for various configurations, enhancing flexibility in circuit design.

Package Style (Meter): SMALL OUTLINE

The small outline design is beneficial for space-constrained applications, allowing for compact PCB designs.

Maximum Supply Voltage Limit: 6 V

A maximum supply voltage of 6V provides a margin for safe operation in various applications within limits.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85 °C, it can operate reliably in moderately harsh environments.

Maximum Bias Current (IIB) @25°C: 0.075 uA

This low bias current specification ensures minimal impact on the performance of high-impedance circuits.

Frequency Compensation: YES

Integrated frequency compensation simplifies design and improves stability across varying conditions.

Minimum Operating Temperature: 0 °C

A minimum operating temperature of 0 °C ensures functionality in a wide range of ambient conditions.

Terminal Finish: NICKEL PALLADIUM GOLD

The terminal finish ensures excellent conductivity and resistance to oxidation, enhancing reliability in connections.

Terminal Position: DUAL

Dual terminal positioning offers versatility in layout options, facilitating easier integration into various designs.

Low-Offset: YES

Low offset characteristics improve the accuracy of analog signal processing and feedback applications.

Maximum Seated Height: 1.75 mm

The compact height allows for more flexibility in designing space-efficient circuits.

Width: 3.9 mm

A narrow width supports high-density PCB layouts, making it easier to meet size constraints in devices.

Maximum Time At Peak Reflow Temperature (s): 40

The defined time-at-peak temperature ensures compatibility with standard soldering processes, facilitating manufacturing.

Peak Reflow Temperature (°C): 260

This high peak reflow temperature tolerance makes the component suitable for modern surface mount soldering techniques.

Length: 4.9 mm

A compact length supports high-density layouts, making this op amp suitable for miniaturized applications.

Temperature Grade: COMMERCIAL EXTENDED

The commercial extended temperature grade ensures reliable performance in a wider range of operating conditions.

Maximum Negative Supply Voltage Limit: 0 V

This specification allows for simple negative biasing, simplifying circuit design.

Nominal Unity Gain Bandwidth: 1900 kHz

A high unity gain bandwidth allows for fast signal processing, making it suitable for high-frequency applications.

Terminal Form: GULL WING

Gull wing leads are ideal for surface mount applications, enhancing manufacturability and reliability.

Amplifier Type: OPERATIONAL AMPLIFIER

As an operational amplifier, it is versatile and widely used in various signal processing applications.

Maximum Supply Current: 1.25 mA

The low supply current helps in designing energy-efficient circuits, especially in battery-operated devices.

Nominal Negative Supply Voltage (Vsup): 0 V

Operating with 0V as the nominal negative supply voltage simplifies design and power supply requirements.

Architecture: VOLTAGE-FEEDBACK

The voltage-feedback architecture provides excellent performance for a range of applications, such as amplifying and signal conditioning.

Packing Method: TUBE

The tube packing method prevents damage during transport and makes it easy to handle during assembly.

Nominal Slow Rate: 0.6 V/us

A nominal slew rate of 0.6 V/us allows for adequate response to fast-changing signals, ensuring accurate signal replication.

Terminal Pitch: 1.27 mm

A standard terminal pitch of 1.27 mm is compatible with a wide range of PCB designs and facilitates assembly.

Technical Specifications

Operational Amplifiers (Op Amps) TS507CD attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from STMicroelectronics

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Power Supply:

3/5 V

Total Functions:

1

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

No

Low-Offset:

Yes

Micropower:

No

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

1.9 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

115 dB

Input Offset Voltage Limit:

550 uV

Nominal Slew Rate:

0.6 V/us

Peak Bias Current:

75 nA

Maximum Bias Current (IIB) @25 °C:

75 nA

Operational Characteristics

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

6 V

Maximum Negative Supply Voltage:

0 V

Minimum Negative Supply Voltage:

0 V

Lowest Operating Temperature:

0 °C (32 °F)

Maximum Operating Temperature:

85 °C (185 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Reflow Peak Time Limit:

40 s

Maximum Supply Current:

1.25 mA

Physical Characteristics

Length:

0.193 in (4.9 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

8

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tube

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP8,.25

Trade Compliance

TS507CD Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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