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TS507IYD

STMicroelectronics

TS507IYD by STMicroelectronics

TS507IYD by STMicroelectronics is a low-offset operational amplifier ideal for automotive applications. It features a max input offset voltage of 750 µV, a common mode reject ratio of 115 dB, and operates within -40 °C to 125°C. Its compact design ensures efficient performance in space-constrained environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Anansix

USA . 2,610 parts In-Stock

1+ parts

-

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2,610

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Vyrian

USA . 204 parts In-Stock

1+ parts

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204

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Digiode

USA . 159 parts In-Stock

1+ parts

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159

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 216 parts In-Stock

1+ parts

$4.363

100+ parts

-

1k+ parts

$3.926

10k+ parts

-

216

$4.363

-

$3.926

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MKK Technologies

India . 2,318 parts In-Stock

1+ parts

$8.204

100+ parts

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10k+ parts

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2,318

$8.204

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DigiPath Technology Company

USA . 2,318 parts In-Stock

1+ parts

$8.204

100+ parts

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2,318

$8.204

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Corphita

USA . 4,010 parts In-Stock

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4,010

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Parana Technologies

USA . 2,070 parts In-Stock

1+ parts

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100+ parts

$5.216

1k+ parts

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2,070

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$5.216

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Overview

Elevate your designs with the TS507IYD operational amplifier from STMicroelectronics, a trusted leader in innovative electronics. This high-performance Op Amp offers exceptional precision and low offset voltage, making it perfect for automotive applications and sensitive signal processing. Its compact size ensures easy integration into your projects while maximizing efficiency. Experience reliability, superior quality, and optimal performance that will set your solutions apart!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material ensures durability and resistance to environmental factors, making it suitable for various applications.

Maximum Input Offset Voltage: 750 uV

A low input offset voltage allows for improved accuracy and performance in precision applications.

Maximum Average Bias Current (IIB): 0.11 uA

This low bias current minimizes errors in high-impedance circuits, enhancing signal integrity.

Surface Mount: YES

Surface mount capability allows for compact PCB designs, saving space in modern electronic devices.

Package Shape: RECTANGULAR

The rectangular shape is efficient for layout space on PCB, optimizing design flexibility.

Nominal Common Mode Reject Ratio: 115 dB

A high common mode rejection ratio ensures better performance in noisy environments, making it reliable for sensitive applications.

Nominal Supply Voltage / Vsup (V): 5

Standard supply voltage of 5V aligns with common power supply options, simplifying design integration.

Power Supplies (V): 3/5

The ability to operate on multiple supply voltages enhances versatility in different circuit designs.

No. of Terminals: 8

Eight terminals provide sufficient connectivity for diverse applications, promoting flexibility in circuit design.

Package Style (Meter): SMALL OUTLINE

The small outline package allows for high-density assembly on PCBs, making it ideal for compact devices.

Maximum Supply Voltage Limit: 6 V

A maximum supply voltage limit of 6V ensures compatibility with a wide range of applications without risking damage.

Maximum Operating Temperature: 125 °C

A high maximum operating temperature allows the op-amp to function reliably in demanding environments such as automotive applications.

Frequency Compensation: YES

Built-in frequency compensation stabilizes the op-amp under varying load conditions, ensuring consistent performance.

Minimum Operating Temperature: -40 °C

The ability to operate in extreme low temperatures makes this op-amp suitable for harsh environments.

Terminal Finish: Nickel/Palladium/Gold (Ni/Pd/Au)

This high-quality terminal finish enhances corrosion resistance and ensures reliable electrical connections.

Terminal Position: DUAL

Dual terminal positioning offers flexibility in PCB layout and design, facilitating easier assembly.

Low-Offset: YES

Low offset characteristics are critical for applications requiring precise signal amplification with minimal distortion.

Maximum Seated Height: 1.75 mm

A low maximum seated height reduces the overall profile of the circuit board, allowing for slimmer devices.

Width: 3.9 mm

A compact width aids in space-constrained applications, making it easier to design dense circuits.

Maximum Time At Peak Reflow Temperature: 40 s

A reasonable reflow time ensures that the component can withstand standard soldering processes without reliability issues.

Peak Reflow Temperature: 260 °C

Compatibility with high peak reflow temperatures supports advanced PCB manufacturing techniques.

Length: 4.9 mm

The short length enhances compatibility with other components, enabling efficient compact designs.

Temperature Grade: AUTOMOTIVE

Being rated for automotive applications indicates robustness and reliability under challenging conditions.

Maximum Negative Supply Voltage Limit: 0 V

This specification allows for straightforward usage in single-supply designs, increasing versatility.

Nominal Unity Gain Bandwidth: 1900 kHz

A high unity gain bandwidth enables the op-amp to handle a wide range of frequencies, benefiting high-speed applications.

Terminal Form: GULL WING

Gull wing terminals offer reliable solder joints and ease of handling during assembly.

Amplifier Type: OPERATIONAL AMPLIFIER

As an operational amplifier, it supports a myriad of analog applications including signal conditioning and filtering.

Maximum Supply Current: 1.25 mA

Low supply current consumption contributes to overall energy efficiency in battery-powered and portable devices.

Nominal Negative Supply Voltage (Vsup): 0 V

A nominal negative supply voltage of 0V allows for simpler circuit designs in various configurations.

Architecture: VOLTAGE-FEEDBACK

Voltage-feedback architecture is well-known for providing excellent performance in precision and stability.

Packing Method: TUBE

The tube packing method ensures the safe delivery of components and makes it easier for manual assembly operations.

Nominal Slew Rate: 0.6 V/us

A nominal slew rate of 0.6 V/us allows for adequate response to fast signal changes, suitable for various dynamic applications.

Terminal Pitch: 1.27 mm

A standard terminal pitch of 1.27 mm is widely compatible with many PCB layouts and automated assembly processes.

Technical Specifications

Operational Amplifiers (Op Amps) TS507IYD attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from STMicroelectronics

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Power Supply:

3/5 V

Total Functions:

1

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

No

Low-Offset:

Yes

Micropower:

No

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

1.9 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

115 dB

Input Offset Voltage Limit:

750 uV

Nominal Slew Rate:

0.6 V/us

Peak Bias Current:

110 nA

Operational Characteristics

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

6 V

Maximum Negative Supply Voltage:

0 V

Minimum Negative Supply Voltage:

0 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Reflow Peak Time Limit:

40 s

Maximum Supply Current:

1.25 mA

Physical Characteristics

Length:

0.193 in (4.9 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

8

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel/Palladium/Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tube

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP8,.25

Trade Compliance

TS507IYD Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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