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TN805-800B-TR

STMicroelectronics

TN805-800B-TR by STMicroelectronics

STMicroelectronics TN805-800B-TR is a SCR with 5A max on-state current, 73A non-repetitive peak current, and 800V repetitive peak reverse voltage. Ideal for applications requiring high power control in compact spaces due to its small outline package and surface mount capability.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,648 parts In-Stock

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1,648

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Anansix

USA . 1,551 parts In-Stock

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1,551

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Vyrian

USA . 1,309 parts In-Stock

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1,309

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 844 parts In-Stock

1+ parts

$1.961

100+ parts

-

1k+ parts

$1.765

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844

$1.961

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$1.765

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MKK Technologies

India . 1,569 parts In-Stock

1+ parts

$3.688

100+ parts

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1,569

$3.688

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DigiPath Technology Company

USA . 1,569 parts In-Stock

1+ parts

$3.688

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10k+ parts

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1,569

$3.688

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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56,986

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Kepictronics

USA . 27,860 parts In-Stock

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27,860

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Corphita

USA . 3,658 parts In-Stock

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3,658

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Parana Technologies

USA . 1,966 parts In-Stock

1+ parts

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$2.345

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1,966

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$2.345

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Overview

Unlock the power of innovation with the TN805-800B-TR by STMicroelectronics. As a leading manufacturer in the industry, STMicroelectronics delivers top-quality Silicon Controlled Rectifiers that offer unmatched performance and reliability. Perfect for a wide range of applications, this SCR is designed to meet your needs with ease. Experience the value and benefits of this product, from its high on-state current to its low leakage current. Trust STMicroelectronics to provide you with cutting-edge technology that exceeds expectations. Elevate your projects today with the TN805-800B-TR.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and protection for the SCR, making it suitable for a variety of applications.

Maximum DC Gate Trigger Current: 5 mA

The low gate trigger current allows for efficient and precise control of the SCR, ensuring reliable performance.

Configuration: SINGLE

The single configuration simplifies the setup and operation of the SCR, making it user-friendly.

Non Repetitive Peak On-state Current: 73 A

The high peak on-state current capacity makes this SCR suitable for high-power applications where a surge in current may occur.

Surface Mount: YES

The surface mount option allows for easy installation and space-saving design, making it ideal for compact electronic devices.

Package Shape: RECTANGULAR

The rectangular shape of the package provides a standard form factor for easy integration into existing circuit designs.

Terminal Form: GULL WING

The gull wing terminal form provides a secure connection and easy soldering, ensuring stable electrical contact.

Maximum On-state Current: 5 A

The high on-state current rating allows the SCR to handle moderate power loads efficiently.

Maximum Leakage Current: 2 mA

The low leakage current ensures minimal power loss and efficient operation of the SCR.

Repetitive Peak Reverse Voltage: 800 V

The high reverse voltage rating makes this SCR suitable for applications requiring high voltage operation.

Maximum Repetitive Peak Off-state Leakage Current: 10 uA

The low off-state leakage current ensures minimal power consumption in standby mode, saving energy.

No. of Terminals: 2

The two-terminal configuration simplifies the wiring and connection of the SCR in a circuit.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space and allows for easy integration into densely packed electronic assemblies.

Maximum Operating Temperature: 125 °C

The high operating temperature rating ensures the SCR can withstand extended periods of operation without overheating.

Trigger Device Type: SCR

Being an SCR, this device provides precise control over the switching of power in a circuit, making it suitable for a wide range of applications.

Minimum Operating Temperature: -40 °C

The wide operating temperature range allows the SCR to function reliably even in harsh environmental conditions.

Terminal Finish: MATTE TIN

The matte tin finish on the terminals provides a reliable and durable connection, reducing the risk of corrosion.

Terminal Position: SINGLE

The single terminal position simplifies the installation and connection of the SCR in a circuit, minimizing errors.

Maximum RMS On-state Current: 8 A

The high RMS current rating allows the SCR to handle continuous current flow efficiently without overheating.

Maximum DC Gate Trigger Voltage: 1.5 V

The low gate trigger voltage ensures efficient and reliable triggering of the SCR, improving performance.

Case Connection: ANODE

The anode case connection simplifies the wiring and installation of the SCR in a circuit, reducing complexity.

Repetitive Peak Off-state Voltage: 800 V

The high off-state voltage rating allows the SCR to withstand high voltage conditions without breakdown.

Minimum Critical Rate of Rise of Off-state Voltage: 50 V/us

The high critical rate of rise of off-state voltage ensures rapid response and reliable operation of the SCR in dynamic conditions.

Maximum Holding Current: 20 mA

The high holding current rating ensures the SCR remains in the on-state even in the presence of small currents, providing stability in the circuit.

Technical Specifications

Silicon Controlled Rectifiers (SCR) TN805-800B-TR attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from STMicroelectronics

Specs

Case Connection:

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

50 V/us

Maximum DC Gate Trigger Current:

5 mA

Maximum DC Gate Trigger Voltage:

1.5 V

Maximum Holding Current:

20 mA

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Maximum Leakage Current:

2 mA

Moisture Sensitivity Level (MSL):

1

Non Repetitive Peak On-state Current:

73 A

No. of Elements:

1

No. of Terminals:

2

Maximum On-state Current:

5 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

8 A

Maximum Repetitive Peak Off-state Leakage Current:

10 uA

Repetitive Peak Off-state Voltage:

800 V

Repetitive Peak Reverse Voltage:

800 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

Trigger Device Type:

SCR

Trade Compliance

TN805-800B-TR Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

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