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TN805-600B

STMicroelectronics

TN805-600B by STMicroelectronics

STMicroelectronics TN805-600B is a SCR with 600V repetitive peak reverse voltage, 73A non-repetitive peak on-state current, and 5mA max DC gate trigger current. It is used in applications requiring high power switching such as motor control systems and industrial automation.

Median Price

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Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 5,525 parts In-Stock

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Digiode

USA . 2,460 parts In-Stock

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2,460

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Anansix

USA . 1,828 parts In-Stock

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1,828

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Bristol Electronics

USA . 700 parts In-Stock

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700

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Dan-Mar Components

USA . 700 parts In-Stock

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700

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Semi Source

USA . 367 parts In-Stock

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367

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Pegasus Components GmbH

Germany . 136 parts In-Stock

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 802 parts In-Stock

1+ parts

$2.875

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$2.588

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802

$2.875

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$2.588

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Advanced Electronics

New Zealand . 1,000 parts In-Stock

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$5.173

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$4.707

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$4.242

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$5.173

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$4.242

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MKK Technologies

India . 1,869 parts In-Stock

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$5.406

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$5.406

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DigiPath Technology Company

USA . 1,869 parts In-Stock

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$5.406

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1,869

$5.406

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AZTECH Wire

Italy . 238 parts In-Stock

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$14.010

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238

$14.010

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Kepictronics

USA . 56,000 parts In-Stock

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Corphita

USA . 3,621 parts In-Stock

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A-Z Elektronik GmbH

Germany . 2,700 parts In-Stock

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RC Electronics

USA . 2,000 parts In-Stock

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2,000

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Parana Technologies

USA . 553 parts In-Stock

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$3.438

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553

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$3.438

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Overview

Elevate your electronic designs with the TN805-600B by STMicroelectronics. This top-of-the-line Silicon Controlled Rectifier offers unparalleled quality and reliability, thanks to its manufacturer's reputation for excellence. Ideal for a variety of applications, this SCR delivers exceptional performance and efficiency. With a maximum RMS On-state Current of 8A and a Repetitive Peak Off-state Voltage of 600V, this product provides unmatched value and benefits to customers looking for reliable and high-performing components for their projects. Choose the TN805-600B for your next design and experience the difference in quality and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used for the package body provides good insulation properties and helps in ensuring the durability and reliability of the SCR.

Maximum DC Gate Trigger Current: 5 mA

The low DC gate trigger current means that the SCR can be easily activated, making it suitable for various applications that require precision control.

Configuration: SINGLE

The single configuration simplifies the design and installation process, making the SCR easy to use in different circuits.

Non Repetitive Peak On-state Current: 73 A

The high non-repetitive peak on-state current rating ensures that the SCR can handle momentary high current surges without getting damaged.

Surface Mount: YES

Being surface mountable makes the SCR suitable for compact electronic applications and allows for efficient PCB layout.

Package Shape: RECTANGULAR

The rectangular shape of the package provides easy mounting and integration into existing electronic systems.

Terminal Form: GULL WING

The gull-wing terminals offer secure connections and ease of soldering during assembly, improving the overall reliability of the product.

Repetitive Peak Reverse Voltage: 600 V

The high repetitive peak reverse voltage rating ensures that the SCR can withstand reverse voltage spikes and fluctuations in the circuit.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature allows the SCR to operate efficiently in a wide range of temperature conditions.

Trigger Device Type: SCR

Being an SCR (Silicon Controlled Rectifier) ensures that the device can control high power levels efficiently and reliably in various applications.

Technical Specifications

Silicon Controlled Rectifiers (SCR) TN805-600B attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from STMicroelectronics

Specs

Case Connection:

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

50 V/us

Maximum DC Gate Trigger Current:

5 mA

Maximum DC Gate Trigger Voltage:

1.5 V

Maximum Holding Current:

20 mA

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Maximum Leakage Current:

.01 mA

Moisture Sensitivity Level (MSL):

1

Non Repetitive Peak On-state Current:

73 A

No. of Elements:

1

No. of Terminals:

2

Maximum On-state Current:

8 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum RMS On-state Current:

8 A

Maximum Repetitive Peak Off-state Leakage Current:

10 uA

Repetitive Peak Off-state Voltage:

600 V

Repetitive Peak Reverse Voltage:

600 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trigger Device Type:

SCR

Trade Compliance

TN805-600B Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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