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TN805-800B

STMicroelectronics

TN805-800B by STMicroelectronics

STMicroelectronics TN805-800B is a SCR with 8A max on-state current, 73A non-repetitive peak current, and 800V repetitive off-state voltage. It's used in applications requiring high power control like industrial motor drives due to its small outline package and surface mount capability.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,496 parts In-Stock

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Digiode

USA . 2,388 parts In-Stock

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Anansix

USA . 811 parts In-Stock

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IDEA Electronic Components Group

UK . 1,959 parts In-Stock

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$3.678

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$3.310

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MKK Technologies

India . 623 parts In-Stock

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$6.917

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DigiPath Technology Company

USA . 623 parts In-Stock

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AZTECH Wire

Italy . 1,143 parts In-Stock

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$10.660

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$10.660

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 16,408 parts In-Stock

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Kepictronics

USA . 15,000 parts In-Stock

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Parana Technologies

USA . 1,739 parts In-Stock

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$4.398

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Corphita

USA . 1,556 parts In-Stock

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Perfect Parts

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Overview

Looking for a reliable Silicon Controlled Rectifier (SCR) for your electronic projects? Look no further than the TN805-800B by STMicroelectronics. With a maximum RMS On-state Current of 8A and Repetitive Peak Reverse Voltage of 800V, this SCR offers top-notch quality and performance. Ideal for a variety of applications, this SCR is surface mountable and has a small outline package style, making it easy to integrate into your designs. Trust STMicroelectronics for high-quality components that deliver exceptional value and reliability. Upgrade your projects with the TN805-800B today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protects the internal components of the SCR, ensuring a longer lifespan.

Maximum DC Gate Trigger Current: 5 mA

Low gate trigger current allows for efficient and reliable operation of the SCR.

Configuration: SINGLE

Simplifies the design and installation process as only one SCR is required for operation.

Repetitive Peak On-state Current: 73 A

Capable of handling high current levels, making it suitable for applications with varying loads.

Surface Mount: YES

Enables easy mounting on circuit boards, saving space and simplifying assembly.

Maximum On-state Current: 8 A

Can handle moderate current levels, suitable for a wide range of applications.

Maximum Leakage Current: 0.01 mA

Low leakage current ensures energy efficiency and reduces the risk of overheating.

Repetitive Peak Reverse Voltage: 800 V

Suitable for applications requiring high reverse voltage protection.

Maximum Repetitive Peak Off-state Leakage Current: 10 uA

Low off-state leakage current minimizes power consumption when the SCR is not conducting.

No. of Terminals: 2

Simplified terminal configuration makes it easy to integrate into different circuit designs.

Maximum Operating Temperature: 125 °C

Can withstand high temperatures, suitable for industrial applications.

Trigger Device Type: SCR

SCR technology provides reliable switching and control of current flow in a circuit.

Minimum Operating Temperature: -40 °C

Capable of operating in low-temperature environments, expanding its range of applications.

Terminal Finish: MATTE TIN

Provides a durable and corrosion-resistant finish on the terminals.

Maximum RMS On-state Current: 8 A

Can handle continuous current flow without overheating, suitable for long-duration operations.

Maximum DC Gate Trigger Voltage: 1.5 V

Low gate trigger voltage ensures efficient control of the SCR.

Repetitive Peak Off-state Voltage: 800 V

Capable of blocking high voltages when the SCR is in the off-state.

Minimum Critical Rate of Rise of Off-state Voltage: 50 V/us

Ability to withstand rapid changes in off-state voltage, ensuring stability in high-frequency applications.

Maximum Holding Current: 20 mA

Capable of holding a specified current level without turning off, providing stability in the circuit.

Technical Specifications

Silicon Controlled Rectifiers (SCR) TN805-800B attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from STMicroelectronics

Specs

Case Connection:

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

50 V/us

Maximum DC Gate Trigger Current:

5 mA

Maximum DC Gate Trigger Voltage:

1.5 V

Maximum Holding Current:

20 mA

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Maximum Leakage Current:

.01 mA

Moisture Sensitivity Level (MSL):

1

Non Repetitive Peak On-state Current:

73 A

No. of Elements:

1

No. of Terminals:

2

Maximum On-state Current:

8 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

8 A

Maximum Repetitive Peak Off-state Leakage Current:

10 uA

Repetitive Peak Off-state Voltage:

800 V

Repetitive Peak Reverse Voltage:

800 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

Trigger Device Type:

SCR

Trade Compliance

TN805-800B Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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