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TN805-800H

STMicroelectronics

TN805-800H by STMicroelectronics

TN805-800H by STMicroelectronics is a single SCR in a rectangular plastic package, ideal for high-voltage applications. It supports up to 800 V repetitive peak reverse voltage and 73 A non-repetitive peak on-state current. With a max operating temp of 125 °C, it's perfect for robust power control systems.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Anansix

USA . 2,438 parts In-Stock

1+ parts

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2,438

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Digiode

USA . 2,416 parts In-Stock

1+ parts

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1k+ parts

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2,416

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Vyrian

USA . 2,337 parts In-Stock

1+ parts

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2,337

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 2,035 parts In-Stock

1+ parts

$3.583

100+ parts

-

1k+ parts

$3.225

10k+ parts

-

2,035

$3.583

-

$3.225

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MKK Technologies

India . 790 parts In-Stock

1+ parts

$6.738

100+ parts

-

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790

$6.738

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DigiPath Technology Company

USA . 790 parts In-Stock

1+ parts

$6.738

100+ parts

-

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10k+ parts

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790

$6.738

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Corphita

USA . 3,972 parts In-Stock

1+ parts

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3,972

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Parana Technologies

USA . 1,413 parts In-Stock

1+ parts

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100+ parts

$4.284

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1,413

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$4.284

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Overview

Unlock limitless possibilities with the TN805-800H from STMicroelectronics—a leader in innovative power solutions. Engineered for reliability and performance, this Silicon Controlled Rectifier (SCR) excels in demanding applications, ensuring exceptional durability even in extreme conditions. With robust current handling and minimal leakage, it offers peace of mind for designers seeking efficiency and longevity. Elevate your projects today with STMicroelectronics' trusted quality!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The durable plastic/epoxy body offers excellent protection against environmental factors, ensuring reliability in various applications.

Maximum DC Gate Trigger Current: 5 mA

A low trigger current requirement makes the device easy to control and integrates easily into low-power circuits.

Configuration: SINGLE

The single configuration simplifies the design and reduces the overall footprint in applications.

Non Repetitive Peak On-state Current: 73 A

High peak on-state current capability allows the SCR to handle large inrush currents, making it suitable for high-power applications.

Package Shape: RECTANGULAR

The rectangular shape optimizes space utilization on PCB layouts, facilitating easier integration into compact designs.

Terminal Form: THROUGH-HOLE

Through-hole design ensures strong mechanical stability and excellent electrical connection, especially in demanding environments.

Maximum On-state Current: 5 A

Supports moderate on-state currents, making it versatile for various switching operations in electronic circuits.

Maximum Leakage Current: 2 mA

Low leakage current minimizes power loss and enhances overall energy efficiency in applications.

Repetitive Peak Reverse Voltage: 800 V

This high reverse voltage rating ensures robust performance in applications with significant voltage fluctuations.

No. of Terminals: 3

Three terminals provide flexibility in circuit design, allowing for versatile configurations in applications.

Package Style (Meter): IN-LINE

In-line package style aids in compact circuit design, allowing for efficient placement and routing on PCBs.

Maximum Operating Temperature: 125 °C

High temperature tolerance enhances reliability and allows operation in harsh conditions.

Trigger Device Type: SCR

As an SCR, it offers excellent switching capabilities, making it suitable for AC switching and power control applications.

Minimum Operating Temperature: -40 °C

A wide operating temperature range ensures functionality in extreme conditions, enhancing application versatility.

Terminal Finish: MATTE TIN

The matte tin finish provides good solderability and enhanced corrosion resistance, improving durability.

Terminal Position: SINGLE

Single terminal position simplifies PCB layout and reduces potential assembly errors.

Maximum RMS On-state Current: 8 A

Ability to handle higher RMS on-state current increases operational efficiency in switching applications.

Maximum DC Gate Trigger Voltage: 1.3 V

This low trigger voltage minimizes power losses during gate activation, ensuring efficient operation.

Case Connection: ANODE

The anode connection facilitates straightforward integration into various circuit configurations.

Repetitive Peak Off-state Voltage: 800 V

A high off-state voltage rating enhances protection against voltage surges, ensuring reliable operation in demanding environments.

Minimum Critical Rate of Rise of Off-state Voltage: 50 V/us

This specification ensures stability and reliability during voltage transients, making the SCR a robust choice for fast switching applications.

Maximum Holding Current: 25 mA

A low holding current allows the SCR to turn off more easily, adding to the effectiveness in control applications.

Technical Specifications

Silicon Controlled Rectifiers (SCR) TN805-800H attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from STMicroelectronics

Specs

Case Connection:

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

50 V/us

Maximum DC Gate Trigger Current:

5 mA

Maximum DC Gate Trigger Voltage:

1.3 V

Maximum Holding Current:

25 mA

JESD-30 Code:

R-PSIP-T3

JESD-609 Code:

e3

Maximum Leakage Current:

2 mA

Moisture Sensitivity Level (MSL):

1

Non Repetitive Peak On-state Current:

73 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

5 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

8 A

Repetitive Peak Off-state Voltage:

800 V

Repetitive Peak Reverse Voltage:

800 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

SCR

Trade Compliance

TN805-800H Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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